HgCdTe infrared detector material: history, status and outlook

Rogalski, Antoni

doi:10.1088/0034-4885/68/10/r01

Cited by 894 publications

(570 citation statements)

References 136 publications

(172 reference statements)

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“…[29][30][31][32] CdTe has a direct optical band gap of ∼ 1.5 eV with a high absorption coefficient. The conjugate gradient algorithm was used to optimize the structure.…”

Section: 2324mentioning

confidence: 99%

Stable ultra-thin CdTe crystal: a robust direct gap semiconductor

İyikanat

Akbalı

Kang

et al. 2017

J. Phys.: Condens. Matter

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Employing density functional theory based calculations, we investigate structural, vibrational and strain-dependent electronic properties of an ultra-thin CdTe crystal structure that can be derived from its bulk counterpart. It is found that this ultra-thin crystal has an 8-atom primitive unit cell with considerable surface reconstructions. Dynamic stability of the structure is predicted based on its calculated vibrational spectrum. Electronic band structure calculations reveal that both electrons and holes in single layer CdTe possess anisotropic in-plane masses and mobilities.Moreover, we show that the ultra-thin CdTe has some interesting electromechanical features, such as strain-dependent anisotropic variation of the band gap value, and its rapid increase under perpendicular compression. The direct band gap semiconducting nature of the ultra-thin CdTe crystal remains unchanged under all types of applied strain. With a robust and moderate direct band gap, single-layer CdTe is a promising material for nanoscale strain dependent device applications.

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“…[29][30][31][32] CdTe has a direct optical band gap of ∼ 1.5 eV with a high absorption coefficient. The conjugate gradient algorithm was used to optimize the structure.…”

Section: 2324mentioning

confidence: 99%

Stable ultra-thin CdTe crystal: a robust direct gap semiconductor

İyikanat

Akbalı

Kang

et al. 2017

J. Phys.: Condens. Matter

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“…By analogy, let us consider a stack of thin layers of semiconductor materials with oppositely signed effective mass of both electrons and holes. Examples of such materials can be mercury telluride, HgTe, which has an inverted band diagram with a negative energy gap and negative effective mass, and the ternary compound Hg 1−x Cd x Te, which has a regular band structure and a positive effective mass for sufficiently large values of the mole fraction x [29,30]. Figure 1b shows the sketch of a superlattice, analogous to the ENZ metamaterials shown in figure 1a.…”

Section: Transformation Electronicsmentioning

confidence: 99%

Two cases of spatial transformations

Silveirinha

Giovampaola

Engheta

2015

Phil. Trans. R. Soc. A.

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Here, we give an overview of our work on two topics related to the theme of spatial transformations in wave theory, namely the concepts of transformation electronics and 'digital' metamaterials. In the first topic, we show that the notion of transformation optics can be extended to other physical phenomena such as tailoring the effective mass of charged carriers, e.g. electrons, in specially designed semiconductor superlattices. We discuss how the combination of thin layers of electronic materials with different effective mass of electrons may lead to bulk composite structures in which the effective mass of electrons may exhibit extreme anisotropy. For the second case, we show that any desired electromagnetic permittivity can, in principle, be engineered with proper combinations of two deeply subwavelength building blocks with relative permittivity values whose real parts have opposite signs. Owing to the presence of a plasmonic resonance between the two building blocks with oppositely signed dielectric constants, the achieved effective relative permittivity for the bulk composite may have values outside the range defined by the two permittivity values of the building blocks. We discuss some of the salient features of these two spatial transformation phenomena.

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“…The MUT's group is also known for detector modelling [20], studies of fundamental problems of the infrared detection [21] and, especially, for numerous Rogalski books and excellent review papers on infrared detectors [22][23][24][25][26][27][28][29].…”

Section: Research On Hg 1-x CD X Te and Related Ir Devicesmentioning

confidence: 99%

Uncooled infrared photodetectors in Poland

Piotrowski

2006

Opto-Electronics Review

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The history and present status of the middle and long wavelength Hg1-xCdxTe infrared detectors in Poland are reviewed. Research and development efforts in Poland were concentrated mostly on uncooled market niche.Technology of the infrared photodetectors has been developed by several research groups. The devices are based on mercury-based variable band gap semiconductor alloys. Modified isothermal vapour phase epitaxy (ISOVPE) has been used for many years for research and commercial fabrication of photoconductive, photoelectromagnetic and other devices. Bulk growth and liquid phase epitaxy was also used. At present, the fabrication of IR devices relies on low temperature epitaxial technique, namely metalorganic vapour phase deposition (MOCVD), frequently in combination with the ISOVPE.Photoconductive and photoelectromagnetic detectors are still in production. The devices are gradually replaced with photovoltaic devices which offer inherent advantages of no electric or magnetic bias, no heat load and no flicker noise. Potentially, the PV devices could offer high performance and very fast response. At present, the uncooled long wavelength devices of conventional design suffer from two issues; namely low quantum efficiency and very low junction resistance. It makes them useless for practical applications. The problems have been solved with advanced 3D band gap engineered architecture, multiple cell heterojunction devices connected in series, monolithic integration of the detectors with microoptics and other improvements. Present fabrication program includes devices which are optimized for operation at any wavelength within a wide spectral range 1–15 μm and 200–300 K temperature range. Special solutions have been applied to improve speed of response. Some devices show picoseconds range response time. The devices have found numerous civilian and military applications.

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HgCdTe infrared detector material: history, status and outlook

Cited by 894 publications

References 136 publications

Stable ultra-thin CdTe crystal: a robust direct gap semiconductor

Stable ultra-thin CdTe crystal: a robust direct gap semiconductor

Two cases of spatial transformations

Uncooled infrared photodetectors in Poland

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