HgCdTe infrared diode lasers grown by MBE

Abstract

in this paper we report our latest results on the fabrication and successful operation of HgCdTe infrared diode lasers. The stripe-geometry double-heterostructure lasers were grown by molecular beam epitaxy (MBE). The active layer thickness ranges between 0.9 and 1.4 pm, and the p + and n + confinement layers were in situ doped up to 10'8cm-3 with arsenic and indium, respectively. Five double heterostructures were grown, all of which produced working lasers. The devices were operated under pulsed currents at temperatures between 40 a n d 90 K. The 77 K stimuiated emission wavelengths for these lasers were 2.9, 3.4, 3.9 and 4.4 vm. Operation at 5.3 pm was demonstrated at 60 K. The lowest 77 K threshold current density was 419 Acm-' which,is very close to the prediction of a numerical calculation. Characterization of the devices, including, lor example, temperature dependence of the threshold currents and spectral analysis, was performed and showed the characteristics of well-behaved. stable devices that operated without failure while being tested.

Long wavelength superluminescence from narrow gap HgCdTe epilayer at 100 K

“…1,7 This allows furthering the wavelength of radiation emission to VLWIR range, namely, 15-30 lm. Previously, lasing in HgCdTe has been studied at shorter wavelengths (1.5-5.3 lm), [8][9][10] but it was established that A3B5 based lasers are largely ahead of those based on HgCdTe 9 in this spectral region. At longer wavelengths, only PL studies were carried out, and most of them were aimed at revealing near bandgap impurity and defect related transitions.…”

“…In this paper, we examine the emission properties of a bulk epitaxial HgCdTe film with a dielectric waveguide under intense optical excitation aiming to reveal HgCdTe material limits in achieving stimulated emission at wavelengths longer than previously reported. 10,21 Structure under study is Hg 0.78 Cd 0.22 Te epitaxial film grown on semi-insulating GaAs(013) substrate with ellipsometric control of the layer content and thickness. 22 The active part of the structure 5 lm thick was grown on the relaxed CdTe buffer layer and surrounded by graded gap Hg 1Àx Cd x Te layers ($100 nm thick).…”

Time resolved photoluminescence spectroscopy of narrow gap Hg1−xCdxTe/CdyHg1−yTe quantum well heterostructures

“…12 QW heterostructures have better carrier localization and can provide additional suppression of Auger processes as compared to the bulk material. 13 However, earlier PL studies of HgTe/CdTe heterostructures in MIR range were mostly carried out in a continuous wave (CW) mode and were aimed at revealing near bandgap impurity and defect related transitions. 14 PL wavelength of 18 lm from HgTe/CdTe superlattice was reported in Ref.…”

Исследования волноводных структур с квантовыми ямами на основе HgCdTe для получения длинноволнового стимулированного излучения

“…Тем не менее все работы по исследованию стимулированного излуче-ния и созданию лазеров в КРТ структурах ограничива-лись гораздо более коротковолновой областью [21][22][23][24][25][26], при этом в качестве активной среды использовались фактически объемные слои HgCdTe. Так, в среднем ИК диапазоне наиболее длинноволновая генерация на длине волны 5.3 мкм при 45 K была получена в работе [23] еще в 1993 г. Лазеры с КЯ на основе HgCdTe были реализованы в работе [24], однако только для длин волн генерации вблизи 2 и 3 мкм.…”