HgCdTe photovoltaic detectors on Si substrates

Kay, Randolph R.; Bean, R.; Zanio, K.; Ito, C.; McIntyre, D.

doi:10.1063/1.98943

Cited by 35 publications

(8 citation statements)

References 3 publications

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“…Also, the problem of the impurities coming from the alternative substrate into the nucleation layer is still not fully avoided. However, it should be mentioned that the first useful MCT/CdTe/Si devices were obtained with ISOVPE [9].…”

Section: The Crystal Quality and The Composition Uniformity Of Isovpementioning

confidence: 99%

“…The best choice for the detector structures and materials that can satisfy the conditions required for future FPAs, in my opinion is an array of photovoltaic (PV) detectors fabricated on epitaxials Hgl_xCd=Te (mercury-cadmium telluride, MCT) on silicon substrates [8][9][10][11][12] and low-dimensional structures (LDSs) [13,14] -multiquantum wells and superlattices on the same substrate. This is because the technology level of processing electronics has already proved itself in the realization of hybrid FPAs [1][2][3][4].…”

Section: Introductionmentioning

confidence: 99%

“…To fabricate these structures, four epitaxial growth methods are currently being used [4]: molecular-beam 0957-4522 © 1995 Chapman & Hall epitaxy (MBE) [8,15], metalorganic chemical vapour deposition (MOCVD) [9][10][11][12], liquid-phase epitaxy (LPE) [6,16,17] and isothermal vapour-phase epitaxy (ISOVPE) [4,9,18]. On the one hand, the sequence of these epitaxial methods corresponds to their potentials for the production of complex FPAs; on the other hand, it is proportional to the amount of investment in necessary equipment.…”

Section: Introductionmentioning

confidence: 99%

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Isothermal vapour-phase epitaxy of mercury-cadmium telluride (Hg,Cd)Te

Djurić

1995

J Mater Sci: Mater Electron

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Isothermal vapour-phase epitaxy (ISOVPE) was the earliest process to be developed for the fabrication of epitaxial mercury-cadmium telluride layers. Although the process was somewhat neglected in the previous period, mostly because of the appearance of metalorganic chemical vapour phase epitaxy and molecular-beam epitaxy, the results of the most recent investigations show that the application of this method can be expected in the second generation of photovoltaic (PV) or metal-insulator-semiconductor (MIS) detectors in the focal plane. This review paper presents the development of ISOVPE giving a complete theoretical model of the process, which is based on fundamental results in the field of phase diagrams of the (Hg,Cd)Te the interdiffusion of Hg and Cd, gas-phase transport, etc. Using the results of this theoretical model, a production system for ISOVPE was designed, in which the deposition process, the high-temperature annealing for composition homogenization and the low-temperature annealing for the achievement of the desired epitaxial-layer doping are all performed in the same cycle. Finally, the basic electrical and optical characteristics of ISOVPE layers are analysed. It is shown that in applications of the fabrication of PV and MIS detector arrays a full affirmation of this technology can be expected.

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Section: The Crystal Quality and The Composition Uniformity Of Isovpementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Isothermal vapour-phase epitaxy of mercury-cadmium telluride (Hg,Cd)Te

Djurić

1995

J Mater Sci: Mater Electron

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“…4 Because of these issues, epitaxial growth of HgCdTe on lowcost alternative substrates has been extensively explored. [5][6][7][8][9] Si has been the main focus of this effort due to its low-cost, availability of large sizes, and availability of high-quality material from a variety of vendors. Epitaxial growth of detector-quality HgCdTe on Si has proven to be a challenge due to the roughly 19% lattice mismatch between the two materials.…”

Section: Introductionmentioning

confidence: 99%

Si Wafer Thinning Techniques Compatible With Epitaxy of CdTe Buffer Layers

Markunas

Jacobs

Smith

et al. 2011

Journal of Elec Materi

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Reduction of threading dislocation density is critical for improving the performance of HgCdTe detectors on lattice-mismatched alternative substrates such as Si. CdTe buffer layers grown by molecular beam epitaxy (MBE), with thicknesses on the order of 8 lm to 12 lm, have helped reduce dislocation densities in HgCdTe layers. In this study, the reduction of threading dislocation densities in CdTe buffer layers grown on locally thinned Si substrates was examined. A novel Si back-thinning technique was developed that maintained an epiready front surface and achieved Si thicknesses as low as 1.9 lm. Threading dislocation densities, acquired by defect decoration techniques, were reduced by as much as 60% for CdTe buffer layers grown on these thinned regions when compared with unthinned regions. However, this reduction is inconsistent with prior notions that threading dislocation propagation is dominated by image forces. Instead, the thickness gradient of thinned Si may play a larger role.

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“…Epitaxial growth of CdTe on GaAs/Si composite wafers has been demonstrated previously using congruent vacuum evaporation from a CdTe source [3][4][5][6] and using MOCVD for the growth of CdTe [7][8][9] and the alloy CdZnTe [10,11].…”

Section: Introductionmentioning

confidence: 99%