We investigated the dependence of T C and magnetoresistance (MR) on gate voltages ( V G ) in the 20-nm-thick high-quality La 0.6 Sr 0.4 MnO 3 (LSMO) Hall bar gated by ionic liquid (more
Reversible Ferromagnetic Phase Transition in ElectrodeGated ManganitesBin Cui , Cheng Song , * Guangyue Wang , Yinuo Yan , Jingjing Peng , Jinghui Miao , Haijun Mao , Fan Li , Chao Chen , Fei Zeng , and Feng Pan * The electronic phase transition has been considered as a dominant factor in the phenomena of colossal magnetoresistance, metal-insulator transition, and exchange bias in correlated electron systems. However, the effective manipulation of the electronic phase transition has remained a challenging issue. Here, the reversible control of ferromagnetic phase transition in manganite fi lms through ionic liquid gating is reported. Under different gate voltages, the formation and annihilation of an insulating and magnetically hard phase in the magnetically soft matrix, which randomly nucleates and grows across the fi lm instead of initiating at the surface and spreading to the bottom, is directly observed. This discovery provides a conceptually novel vision for the electric-fi eld tuning of phase transition in correlated oxides. In addition to its fundamental signifi cance, the realization of a reversible metalinsulator transition in colossal magnetoresistance materials will also further the development of four-state memories, which can be manipulated by a combination of electrode gating and the application of a magnetic fi eld.