Hierarchical hexagonal boron nitride nanowall–diamond nanorod heterostructures with enhanced optoelectronic performance

Sankaran, Kamatchi Jothiramalingam; Hoang, Duc Quang; Korneychuk, Svetlana; Srinivasu, K.; Thomas, Joseph P.; Pobedinskas, Paulius; Drijkoningen, Sien; Bael, Marlies K. Van; D’Haen, Jan; Verbeeck, Johan; Leou, Keh-Chyang; Leung, K. T.; Lin, I‐Nan; Haenen, Ken

doi:10.1039/c6ra19596b

Cited by 9 publications

(15 citation statements)

References 59 publications

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“…The two most studied BN nanomaterials are h-BN and BNNTs. Both are insulators that exhibit remarkable thermal stability and mechanical strength and hence have attracted interest for a wide range of applications such as the reinforcement of polymeric films, bioactive ceramics, optoelectronics, − and sensing applications. , …”

Section: Introductionmentioning

confidence: 99%

Boron Nitride Nanotube Nucleation via Network Fusion during Catalytic Chemical Vapor Deposition

2019

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Despite boron nitride nanotubes (BNNTs) first being synthesized in the 1990s, their nucleation mechanism remains unknown. Here we report nonequilibrium molecular dynamics simulations showing how BNNT cap structures form during Ni-catalyzed chemical vapor deposition (CVD) of ammonia borane. BN hexagonal ring networks are produced following the catalytic evolution of H2 from the CVD feedstock, the formation and polymerization of B–N chain structures, and the repeated cleavage of homoelemental B–B/N–N bonds by the catalyst surface. Defect-free BNNT cap structures then form perpendicular to the catalyst surface via direct fusion of adjacent BN networks. This BNNT network fusion mechanism is a marked deviation from the established mechanism for carbon nanotube nucleation during CVD and potentially explains why CVD-synthesized BNNTs are frequently observed having sharper tips and wider diameters compared to CVD-synthesized carbon nanotubes.

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Section: Introductionmentioning

confidence: 99%

Boron Nitride Nanotube Nucleation via Network Fusion during Catalytic Chemical Vapor Deposition

2019

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“…The schematic for the PD device using diamond nanostructures as the cathode is shown in Figure 9a. 46 The PI photographs in Figure 9b show that the BMCD L sample ignites the plasma at the lowest breakdown voltage (V bk ) of 360 V compared to the other samples, BUNCD L (380 V), BMCD P (400 V), and BUNCD P (400 V), respectively. Figure 9c shows the RGB intensity obtained from the PI photographs shown in Figure 9b.…”

Section: Resultsmentioning

confidence: 97%

“…In order to clarify the effect of the excellent electrical properties of the BMCD and BUNCD series on PD, the PI performance of PD devices was investigated by using BMCD and BUNCD samples as the cathode. The schematic for the PD device using diamond nanostructures as the cathode is shown in Figure a . The PI photographs in Figure b show that the BMCD L sample ignites the plasma at the lowest breakdown voltage ( V bk ) of 360 V compared to the other samples, BUNCD L (380 V), BMCD P (400 V), and BUNCD P (400 V), respectively.…”

Section: Resultsmentioning

confidence: 99%

Nanoscale Investigation on the Improvement of Electrical Properties of Boron-Doped Diamond Nanostructures for High-Performance Plasma Displays

Suman,

Sharma,

Sain

et al. 2023

ACS Appl. Electron. Mater.

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“…Interestingly, the PI performance of the NB-DNWs displays substantial improvements as compared to other materials as cathodes in the microplasma device reported earlier (Table ). − …”

Section: Resultsmentioning

confidence: 99%

Nitrogen-Incorporated Boron-Doped Nanocrystalline Diamond Nanowires for Microplasma Illumination

Sethy

Ficek

Sankaran

et al. 2021

ACS Appl. Mater. Interfaces

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The origin of nitrogen-incorporated boron-doped nanocrystalline diamond (NB-NCD) nanowires as a function of substrate temperature (T s ) in H 2 /CH 4 /B 2 H 6 /N 2 reactant gases is systematically addressed. Because of T s , there is a drastic modification in the dimensional structure and microstructure and hence in the several properties of the NB-NCD films. The NB-NCD films grown at low T s (400 °C) contain faceted diamond grains. The morphology changes to nanosized diamond grains for NB-NCD films grown at 550 °C (or 700 °C). Interestingly, the NB-NCD films grown at 850 °C possess one-dimensional nanowirelike morphological grains. These nanowire-like NB-NCD films possess the co-existence of the sp 3 -diamond phase and the sp 2graphitic phase, where diamond nanowires are surrounded by sp 2 -graphitic phases at grain boundaries. The optical emission spectroscopy studies stated that the CN, BH, and C 2 species in the plasma are the main factors for the origin of nanowire-like conducting diamond grains and the materialization of graphitic phases at the grain boundaries. Moreover, conductive atomic force microscopy studies reveal that the NB-NCD films grown at 850 °C show a large number of emission sites from the grains and the grain boundaries. While boron doping improved the electrical conductivity of the NCD grains, the nitrogen incorporation eased the generation of graphitic phases at the grain boundaries that afford conducting channels for the electrons, thus achieving a high electrical conductivity for the NB-NCD films grown at 850 °C. The microplasma devices using these nanowire-like NB-NCD films as cathodes display superior plasma illumination properties with a threshold field of 3300 V/μm and plasma current density of 1.04 mA/cm 2 with a supplied voltage of 520 V and a lifetime stability of 520 min. The outstanding plasma illumination characteristics of these conducting nanowire-like NB-NCD films make them appropriate as cathodes and pave the way for the utilization of these materials in various microplasma device applications.

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Hierarchical hexagonal boron nitride nanowall–diamond nanorod heterostructures with enhanced optoelectronic performance

Abstract: Covering diamond nanorod with hexagonal boron nitride nanowalls is an effective approach for the fabrication of hierarchical heterostructured field emission devices that open new prospects in flat panel displays and high brightness electron sources.

Cited by 9 publications

References 59 publications

Boron Nitride Nanotube Nucleation via Network Fusion during Catalytic Chemical Vapor Deposition

Boron Nitride Nanotube Nucleation via Network Fusion during Catalytic Chemical Vapor Deposition

Nanoscale Investigation on the Improvement of Electrical Properties of Boron-Doped Diamond Nanostructures for High-Performance Plasma Displays

Nitrogen-Incorporated Boron-Doped Nanocrystalline Diamond Nanowires for Microplasma Illumination

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