2006
DOI: 10.1088/0960-1317/16/5/025
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High aspect ratio spiral microcoils fabricated by a silicon lost molding technique

Abstract: In this paper, a silicon lost molding process is described for fabricating high aspect ratio microcoils with high Q factors. Deep reactive ion etching, electroplating and XeF2 silicon etching are utilized in this process. Microcoils with an aspect ratio of 16 and inner diameters from 80 µm to 200 µm are fabricated. The electrical characteristics are measured using a network analyzer and a two-terminal radio frequency probe. For a microcoil with an inner diameter of 130 µm, three windings and an outer diameter … Show more

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Cited by 13 publications
(10 citation statements)
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“…Researchers have used through-wafer silicon trenches as electroplating molds for interconnects in three dimensional packaging [19,20]. More recently, using through-wafer silicon trenches for magnetic lamination was studied [13] and a coreless RF inductor based on through-wafer silicon molds was demonstrated [21]. However, using silicon molding technique to construct a power inductor by stack multiple thick metal layers has not been reported.…”
Section: Performances Of the Integrated Power Inductors From Literaturementioning
confidence: 99%
See 1 more Smart Citation
“…Researchers have used through-wafer silicon trenches as electroplating molds for interconnects in three dimensional packaging [19,20]. More recently, using through-wafer silicon trenches for magnetic lamination was studied [13] and a coreless RF inductor based on through-wafer silicon molds was demonstrated [21]. However, using silicon molding technique to construct a power inductor by stack multiple thick metal layers has not been reported.…”
Section: Performances Of the Integrated Power Inductors From Literaturementioning
confidence: 99%
“…Therefore it is possible that fully-integrated power converters can be fabricated by an IC foundry. In fact, a CMOS-MEMS process capable of fabricating deep-silicon trench structures has been developed for making integrated inertial sensors [21][22][23]. 4) The through-wafer metals and vias provide good thermal paths.…”
Section: Process Flowmentioning
confidence: 99%
“…At high frequencies, skin and proximity effects increase the effective resistance of the coil [11]. The effective resistance can be estimated by the following equation,…”
Section: Inductive Power Linkmentioning
confidence: 99%
“…The variables C 1 , C 2 and C 3 take the values 1; 2.46; and 0.2 respectively [13]. The impedance of the coil is due to the resistivity of the material, and skin effect and proximity effects [14]. The coil impedance can be calculated by adding the resistance of the coil due to skin effect, to the resistance due to proximity effect.…”
Section: Coil Fabricationmentioning
confidence: 99%