This paper reports a new fabrication process that can be used to integrate high-power-density and low-loss inductors with silicon-based power ICs to realize monolithic integration of power converters for portable electronics applications. In this new process, copper is electroplated into through-wafer silicon trenches, resulting in thick copper windings (200~500 µm) and thus low winding resistance. The magnetic cores are electroplated on both sides of the silicon substrate to cover the copper windings, and through-wafer magnetic vias are used to close the magnetic path. Powder permalloy with relatively high resistivity (400 µ ·cm) and low permeability (40) are used to reduce the loss of large magnetic cores. The powder permalloy can be fabricated by using high-current-density electroplating without mixing or high temperature sintering. A pot-core inductor has been designed and fabricated. The inductance and saturation current of the designed inductor are 179 nH and 5 A, respectively. The measured winding resistance of the 200 µm thick copper winding is 23 m .