High-aspect-ratio sub-micron trench etching on SOI using wet metal-assisted chemical etching (MaCE) process

Hamelin, Benoit; Li, Liyi; Daruwalla, Anosh; Wong, Ching‐Ping; Ayazi, Farrokh

doi:10.1109/memsys.2016.7421657

Cited by 5 publications

(3 citation statements)

References 12 publications

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“…To evaluate the effect of the surface topography, micropillar and microhole arrays on Si wafers with various surface parameters from ξ = 0.1 to ξ = 0.9 were prepared. To clarify the effect of the trapped air in the hole, through-hole patterns were fabricated by a wet etching process to remove the sacrificial SiO 2 layer …”

Section: Methodsmentioning

confidence: 99%

“…To clarify the effect of the trapped air in the hole, throughhole patterns were fabricated by a wet etching process to remove the sacrificial SiO 2 layer. 21 Additionally, the same patterns on various materials were prepared by employing an imprinting technique and applying a molecular coating on the surface. The fabricated Si wafers with micropillar and microhole arrays were used as imprinting stamps to replicate the microhole array and micropillar array on photoresist (PR, LX-429, Dongjin Semichem, Korea) and polydimethylsiloxane (PDMS, Goodfellow, USA), respectively.…”

Section: ■ Experimental Sectionmentioning

confidence: 99%

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Diverging Effects of Topographical Continuity on the Wettability of a Rough Surface

Cho

Kim

Cho

et al. 2016

ACS Appl. Mater. Interfaces

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The effects of the continuity of the surface pattern on wetting enhancement was investigated using micropillar and microhole arrays on hydrophilic and hydrophobic materials. Isolated micropillar arrays and continuous microhole arrays were prepared by a microscale imprinting technique using positive and negative Si molds fabricated by a conventional photolithography technique. The contact angles (CAs) and contact angle hysteresis (CAH) of the prepared surfaces were measured as a function of the surface parameter ξ, defined as the ratio of the top surface area of the microstructure to the surface area of the flat unit cell. It was found that the CAs of the micropillar array monotonically increased as the surface ratio decreased, regardless of the native wettability of the solid. However, an abnormal and consistent decrease of the CAs for the microhole array was observed when ξ < 0.5. To investigate the mechanism of this abnormality in wetting enhancement, the energy barriers for normal direction wetting, the so-called wetting transition from Cassi-Baxter (CB) wetting to Wenzel wetting, and lateral direction wetting, that is, spreading, were investigated with consideration of the trapped air in the microhole. The analysis unveiled that the hydrophobicity of the hydrophilic surfaces are attributable to the liquid-air interface pinning at the discontinuous edge of the pillar, which results in CB wetting. The abnormal decrease in the CAs of the microhole-patterned surfaces with ξ < 0.5 has been attributed to the relatively low energy barrier for spreading influenced by the continuity of the three-phase contact line. Additionally, trapped air in the microhole also plays a role in the spreading of water droplets by hindering the wetting transition from CB wetting to Wenzel wetting.

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Section: Methodsmentioning

confidence: 99%

Section: ■ Experimental Sectionmentioning

confidence: 99%

Diverging Effects of Topographical Continuity on the Wettability of a Rough Surface

Cho

Kim

Cho

et al. 2016

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

show abstract

“…Fabrication of high-aspect-ratio silicon micro-and nano-structures is a key process in many applications, such as microelectronics [1], microelectromechanical systems [2,3], sensors [4], thermoelectric materials [5], battery anodes [6], solar cells [7], photonic devices [8], and X-ray optics [9]. Microfabrication is usually achieved by reactive ion etching [10], which requires high investment in tools and maintenance.…”

Section: Introductionmentioning

confidence: 99%

Microfabrication of X-ray Optics by Metal Assisted Chemical Etching: A Review

Romano

Stampanoni

2020

Micromachines

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High-aspect-ratio silicon micro- and nanostructures are technologically relevant in several applications, such as microelectronics, microelectromechanical systems, sensors, thermoelectric materials, battery anodes, solar cells, photonic devices, and X-ray optics. Microfabrication is usually achieved by dry-etch with reactive ions and KOH based wet-etch, metal assisted chemical etching (MacEtch) is emerging as a new etching technique that allows huge aspect ratio for feature size in the nanoscale. To date, a specialized review of MacEtch that considers both the fundamentals and X-ray optics applications is missing in the literature. This review aims to provide a comprehensive summary including: (i) fundamental mechanism; (ii) basics and roles to perform uniform etching in direction perpendicular to the <100> Si substrate; (iii) several examples of X-ray optics fabricated by MacEtch such as line gratings, circular gratings array, Fresnel zone plates, and other X-ray lenses; (iv) materials and methods for a full fabrication of absorbing gratings and the application in X-ray grating based interferometry; and (v) future perspectives of X-ray optics fabrication. The review provides researchers and engineers with an extensive and updated understanding of the principles and applications of MacEtch as a new technology for X-ray optics fabrication.

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Nano-metal-Assisted Chemical Etching for Fabricating Semiconductor and Optoelectronic Devices

Hildreth

Wong

2016

Materials for Advanced Packaging

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High-aspect-ratio sub-micron trench etching on SOI using wet metal-assisted chemical etching (MaCE) process

Cited by 5 publications

References 12 publications

Diverging Effects of Topographical Continuity on the Wettability of a Rough Surface

Diverging Effects of Topographical Continuity on the Wettability of a Rough Surface

Microfabrication of X-ray Optics by Metal Assisted Chemical Etching: A Review

Nano-metal-Assisted Chemical Etching for Fabricating Semiconductor and Optoelectronic Devices

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