High-aspect ratio through-silicon vias for the integration of microfluidic cooling with 3D microsystems

Oh, Hanju; Gu, Ja Myung; Hong, Sang Jeen; May, G.S.; Bakir, Muhannad S.

doi:10.1016/j.mee.2015.07.005

Cited by 20 publications

(3 citation statements)

References 21 publications

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“…Additionally, Hanju Oh et al focused on the fabrication of fully isolated TSVs with an aspect ratio of 23:1, investigated the integration of high-aspect-ratio TSVs within a microfluidic heat sink using various fabrication processes, proposed a 3D system with TSVs embedded within interlayer-microfluidic cooling, and described the fabrication and the electrical characterization of high-aspect-ratio TSVs within a micropin-fin heat sink in detail [ 33 ]. The distilled water, common acting as a coolant, brought about an impact on the electrical performance of TSVs.…”

Section: Influence Of Microfluidic Cooling On Through Silicon Viasmentioning

confidence: 99%

3D Integrated Circuit Cooling with Microfluidics

Wang

Yin

et al. 2018

Micromachines

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Using microfluidic cooling to achieve thermal management of three-dimensional integrated circuits (ICs) is recognized as a promising method of extending Moore law progression in electronic components and systems. Since the U.S. Defense Advanced Research Projects Agency launched Intra/Inter Chip Enhanced Cooling thermal packaging program, the method of using microfluidic cooling in 3D ICs has been under continuous development. This paper presents an analysis of all publications available about the microfluidic cooling technologies used in 3D IC thermal management, and summarized these research works into six categories: cooling structure design, co-design issues, through silicon via (TSV) influence, specific chip applications, thermal models, and non-uniform heating and hotspots. The details of these research works are given, future works are suggested.

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Section: Influence Of Microfluidic Cooling On Through Silicon Viasmentioning

confidence: 99%

3D Integrated Circuit Cooling with Microfluidics

Wang

Yin

et al. 2018

Micromachines

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“…Most importantly, the technology of vertical interconnections using through-silicon vias (TSV) has to be mastered. Recent breakthroughs in this field [4][5][6][7] indicate that chip manufacturers are close to achieving this goal. The bonding technology and mechanical stability is another crucial issue [8,9].…”

Section: Introductionmentioning

confidence: 99%

Compact Thermal Modelling Tool for Fast Design Space Exploration of 3D ICs with Integrated Microchannels

Zając

2020

Energies

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Integrated microchannel cooling is a very promising concept for thermal management of 3D ICs, because it offers much higher cooling performance than conventional forced-air convection. The thermo-fluidic simulations of such chips are usually performed using a computational fluid dynamics (CFD) approach. However, due to the complexity of the fluid flow modelling, such simulations are typically very long and faster models are therefore considered. This paper demonstrates the advantages of TIMiTIC—a compact thermal simulator for chips with liquid cooling—and shows its practical usefulness in design space exploration of 3D ICs with integrated microchannels. Moreover, thermal simulations of a 3D processor model using the proposed tool are used to estimate the optimal power dissipation profile in the chip and to prove that such an optimal profile allows for a very significant (more than 10 °C) peak temperature reduction. Finally, a custom correlation metric is introduced which allows the comparison of the power distribution profiles in terms of the peak chip temperature that they produce. Statistical analysis of the simulation results demonstrates that this metric is very accurate and can be used for example in thermal-aware task scheduling or dynamic voltage and frequency scaling (DVFS) algorithms.

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“…In this paper, the first part of the study focuses on a non-copper-plated area at the bottom of large through-silicon-vias (TSVs). The TSV interconnects provide the shortest electrical pathway, lower power consumption, lower noise, smaller form factor, and yield better performance and more functionality in comparison with the conventional chip multi-layers stacking (CMLS) [8,9]. The most common TSV metallization stack is composed of a copper (Cu) diffusion barrier and a seed layer followed by the bottom-up being electroplated [10].…”

Section: Introductionmentioning

confidence: 99%

ToF-SIMS 3D Analysis of Thin Films Deposited in High Aspect Ratio Structures via Atomic Layer Deposition and Chemical Vapor Deposition

et al. 2019

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For the analysis of thin films, with high aspect ratio (HAR) structures, time-of-flight secondary ion mass spectrometry (ToF-SIMS) overcomes several challenges in comparison to other frequently used techniques such as electron microscopy. The research presented herein focuses on two different kinds of HAR structures that represent different semiconductor technologies. In the first study, ToF-SIMS is used to illustrate cobalt seed layer corrosion by the copper electrolyte within the large through-silicon-vias (TSVs) before and after copper electroplating. However, due to the sample’s surface topography, ToF-SIMS analysis proved to be difficult due to the geometrical shadowing effects. Henceforth, in the second study, we introduce a new test platform to eliminate the difficulties with the HAR structures, and again, use ToF-SIMS for elemental analysis. We use data image slicing of 3D ToF-SIMS analysis combined with lateral HAR test chips (PillarHall™) to study the uniformity of silicon dopant concentration in atomic layer deposited (ALD) HfO2 thin films.

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High-aspect ratio through-silicon vias for the integration of microfluidic cooling with 3D microsystems

Cited by 20 publications

References 21 publications

3D Integrated Circuit Cooling with Microfluidics

3D Integrated Circuit Cooling with Microfluidics

Compact Thermal Modelling Tool for Fast Design Space Exploration of 3D ICs with Integrated Microchannels

ToF-SIMS 3D Analysis of Thin Films Deposited in High Aspect Ratio Structures via Atomic Layer Deposition and Chemical Vapor Deposition

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