High Bandwidth Operation of Directly Modulated Laser Based on Quantum-Dash InAs–InP Material at 1.55 $\mu$m

Dagens, B.; Make, D.; Lelarge, F.; Rousseau, B.; Calligaro, M.; Carbonnelle, M.; Pommereau, F.; Accard, A.; Poingt, F.; Gouézigou, L. Le; Dernazaretian, C.; Gouezigou, O. Le; Provost, Jean-Guy; Dijk, Frédéric van; Resneau, P.; Krakowski, M.; Duan, Guang‐Hua

doi:10.1109/lpt.2008.922349

Cited by 25 publications

(8 citation statements)

References 8 publications

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“…A characteristic temperature T 0 ~80 K (up to 80 ºC) with threshold current density as low as 12 mA and lasing wavelength ~1.55 µm was reported. This Qdash active region design was further optimized by Dagens et al [238] by reducing p-side (20 nm) and n-side (70 nm) SCH layers for the 6-stack InAs/InGaAsP Qdash laser in order to reduce the carrier transit time, and to limit the recovery of the 1-16 GHz), and a small signal modulation bandwidth of 10.5 GHz in CW operation and room temperature (largest value ever reported on any Qdash material system), as shown in Figs. 36(a) and (b).…”

Section: Inas/ingaasp Materials Systemmentioning

confidence: 99%

“…This insignificant effect of tunneling scheme on the laser dynamic characteristics was related mainly to the large escape of carriers from the injectorQdash ensembles which could be improved via higher energy barriers or moderate p-doping as has been demonstrated by Mi et al [186] utilizing both p-doping and tunnel injection scheme. Adapted from [238,242].…”

Section: Inas/ingaasp Materials Systemmentioning

confidence: 99%

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Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

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The advances in lasers, electronic and photonic integrated circuits (EPIC), optical interconnects as well as the modulation techniques allow the present day society to embrace the convenience of broadband, high speed internet and mobile network connectivity. However, the steep increase in energy demand and bandwidth requirement calls for further innovation in ultra-compact EPIC technologies. In the optical domain, innovation in the laser technologies beyond the current quantum well (Qwell) based laser technologies are already taking place and presenting very promising results. Homogeneously grown quantum dot (Qdot) lasers, can serve in the future energy saving information and communication technologies (ICT) as the work-horse for transmitting information through optical fiber. The encouraging results in the zero-dimensional (0D) structures emitting at 980 nm, in the form of vertical cavity surface emitting laser (VCSEL), are already operational at low threshold current density and capable of 40 Gbps error-free transmission at 108 fJ/bit. Eventual achievements for lasers operating in the O-, C-, L-, U-bands, and beyond will eventually lay the foundation for green ICT. On the hand, the inhomogeneously grown quasi 0D quantum dash (Qdash) lasers are brilliant solutions for potential broadband connectivity in server farms or access network. A single broadband Qdash laser operating in the stimulated emission mode can replace tens of discrete narrow-band lasers in dense wavelength division multiplexing (DWDM) transmission thereby further saving energy, cost and footprint. In this article, we review the progress of both Qdots and Qdash devices based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the angles of growth and device performance.2

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Section: Inas/ingaasp Materials Systemmentioning

confidence: 99%

Section: Inas/ingaasp Materials Systemmentioning

confidence: 99%

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

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“…Furthermore, a drastic improvement in the device dynamic characteristics was witnessed as the relaxation frequency was a high 13.5 GHz which was acquired through RIN measurements (À155 to À160 dB/Hz from 0.5 to 20 GHz) and is among the best reported values in an InAs/InP Qdash material system. Dagens et al [45] were able to further optimize the design of the Qdash active region by reducing the p-and n-side SCH layers to 20, and 70 nm, respectively in a 6-stack InAs/InGaAsP Qdash laser. This was carried out for the purpose of reducing the carrier transit time and to limit the recovery of the optical mode and the absorbing p-doped waveguiding layers.…”

Section: Inas/ingaasp/inp Qdash Lasersmentioning

confidence: 99%

InAs/InP quantum-dash lasers

Khan

Alkhazraji

et al. 2019

Nanoscale Semiconductor Lasers

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“…A given RO frequency could be obtained if we optimize the capture/escape time ratio by controlling the growth of quantum dashes. Recent relative intensity noise measurements and small-signal direct modulation of quantum dash lasers 8 showed that RO frequencies correspond to a modulation bandwidth of 8 GHz at 160 mA and above 10 GHz at higher currents. The impact of the escape rate on the damping rate can be evaluated in two ways.…”

Section: ͑15͒mentioning

confidence: 99%

Relaxation characteristics of quantum-dash-based semiconductor lasers

Erneux

Viktorov

Mandel

et al. 2009

Applied Physics Letters

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We analyze the relaxation dynamics of quantum dot/dash lasers in terms of the energy exchange between the ground state and the wetting layer. We consider the case where both capture and escape times are of the same order of magnitude and determine the relaxation oscillation frequency and its damping rate. We show that the escape process may significantly affect the modulation characteristics and the tolerance to optical feedback. © 2009 American Institute of Physics. ͓doi:10.1063/1.3271999͔Semiconductor lasers based on quantum dots ͑QDs͒ have attracted significant attention over the past decade, being generally recognized as the next generation source for optical communications. The performance of lasers in high speed data transmission strongly depends on the damping rate of the relaxation oscillation ͑RO͒ frequency. These properties were extensively studied theoretically and experimentally for QD lasers near the minimum dispersion at 1.3 m of the communication band. The nanostructured materials grown for minimum loss at 1.55 m are usually anisotropic and known as quantum dashes. Recent experimental works with quantum-dash-based lasers have demonstrated decisively greater stability and better tolerance to optical feedback than quantum well ͑QW͒ lasers. 1 Quantum dash lasers operating at 1.55 m are characterized by a large escape rate. In this letter, we study the impact of this property on the relaxation dynamics and derive a two-variable model from the conventional QD laser rate equations. We determine the RO frequency, its damping rate, and show that the large escape has a significant impact on the dynamical response of the laser. Specifically, it leads to a decreased RO frequency and an increased damping rate. The comparison of these results with experimental data obtained for quantum-dash lasers gives excellent agreement.The simplest rate equations model 2 consists of three equations for the intensity I of the laser field in the cavity, the occupation probability of a dash in the laser, and the number n of carriers in the wetting layer per dash ͑dot͒. They are given bywhere prime means differentiation with respect to time t. The relaxation rates of and n are assumed to be equal for mathematical simplicity ͑ Ϸ 1 ns͒. g denotes the gain factor and J is the pump current per dot which will be our control parameter. The function F͑ , n͒ describes the carrier exchange rate between the wetting layer and the dots. The carrier exchange rate can be expressed aswhere 1 − is the Pauli blocking factor. cap −1 n͑1− ͒ describes the carrier capture with rate cap −1 and esc −1 models the carrier escape from the dashes to the wetting layer. The model neglects the complexities of inhomogeneous broadening but allows an analytical evaluation of the impact of escape on the relaxation characteristics.In QD lasers, the role of escape mechanisms is usually negligible and the damping rate is determined by a competition between two processes characterized by the capture rate cap −1 and the gain factor g. An asymptotic analysis of Eqs....

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High Bandwidth Operation of Directly Modulated Laser Based on Quantum-Dash InAs–InP Material at 1.55 $\mu$m

Cited by 25 publications

References 8 publications

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

InAs/InP quantum-dash lasers

Relaxation characteristics of quantum-dash-based semiconductor lasers

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