InAs/InP quantum-dash lasers

Khan, M. Z. M.; Alkhazraji, E.; Ng, Tien Khee; Ooi, Boon S.

doi:10.1016/b978-0-12-814162-5.00005-4

Cited by 2 publications

(1 citation statement)

References 103 publications

(130 reference statements)

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“…In this regard, a large number of FP modes can be obtained from a singular Qdash LD source, allowing for mass deployment of the device as a transceiver since identical devices with identical configurations could be equipped at each OLT/ONU of the WDM-PON, making it much more convenient, and time-and cost-effective when compared to deployment of non-identical sources, thus cutting CapEx and Op-Ex drastically and allows for seamless scalability [13]. Multiple-mode OIL has also been realized to generate a high-quality multiwavelength Qdash LD in the L-band [41]. In addition, as a VOLUME 10, 2022 TABLE 1.…”

Section: B Qdash Injection-locked Lasersmentioning

confidence: 99%

Towards InAs/InP Quantum-Dash Laser-Based Ultra-High Capacity Heterogeneous Optical Networks: A Review

Khan

2022

IEEE Access

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The unprecedented increase in internet traffic witnessed in the last few years has pushed the community to explore heterogeneous optical networks, including free-space-optics (FSO) communication, radio-over-fiber (RoF), wireless (WL), and their convergent hybrid technologies. This stems from the possibility of seamless integration with the existing fiber-optic backhaul networks while providing muchneeded flexibility and scalability. Moreover, efficient optical transceivers, particularly light sources in the form of semiconductor laser diodes, are key in meeting the future demands of the next generation green optical access networks. In this respect, InAs/InP Quantum-dash (Qdash) nanostructure-based lasers have shown tremendous progress in the past few years with applications spanning from a wavelength division multiplexed (WDM) optical communication to recently, millimeter-wave (MMW) over fiber networks. This waveguide-based laser diode (LD) has demonstrated a rule-changing broad multi-wavelength lasing emission, thanks to the inherent and wavelength-tunable wide gain profile offered by the Qdash activegain region covering S-to U-band regions. Moreover, exploiting mode-locking and optical injection locking assisting techniques, highly coherent InAs/InP Qdash comb laser source at 1550 nm and 1610 nm have been respectively realized, thus opening a new paradigm for their potential applications in green optical and 5G access networks. In this work, progress on utilizing InAs/InP Qdash LD, supporting several sub-carriers, in energy-efficient ∼1550 nm and ∼1610 nm WDM heterogeneous optical networks with single-modefibers (SMF) has been highlighted, exhibiting aggregate data rates of 11 -12 Tb/s by employing a single device, and accommodating PAM4 and higher-order 32-QAM modulation schemes. Moreover, the recent deployment of this LD in the RoF domain, targeting MMW frequency band, for convergent fiber-wireless networks, is also summarized, with demonstrated 25 to >100 GHz MMW beat-tone frequency generates and transmission of up to 24 Gb/s.

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Section: B Qdash Injection-locked Lasersmentioning

confidence: 99%

Towards InAs/InP Quantum-Dash Laser-Based Ultra-High Capacity Heterogeneous Optical Networks: A Review

Khan

2022

IEEE Access

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Broadband Laser for Optical Telecommunication

Khan

2020

Digital Encyclopedia of Applied Physics

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This article introduces a new class of broadband semiconductor lasers by presenting the perspective of their principle of operation and potential application in energy‐efficient optical communication. Firstly, the working principle of a semiconductor laser is discussed, followed by the significant advancements in the form of quantum‐confined active semiconductor materials and heterostructure laser devices. Then, the underlying principle of broadband emission, which are the broad gain‐bandwidth active materials and the related carrier dynamics, are discussed in detail. Finally, the demonstration and status of broadband quantum‐confined active region based semiconductor lasers, from the literature, are discussed. The article concludes by describing their utilization as a cohesive single light source in wavelength division multiplexed optical communication system.

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InAs/InP quantum-dash lasers

Cited by 2 publications

References 103 publications

Towards InAs/InP Quantum-Dash Laser-Based Ultra-High Capacity Heterogeneous Optical Networks: A Review

Towards InAs/InP Quantum-Dash Laser-Based Ultra-High Capacity Heterogeneous Optical Networks: A Review

Broadband Laser for Optical Telecommunication

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