High-Breakdown P-Channel GaN MOS-HFETs With Al<sub>2</sub>O<sub>3</sub>-Dielectric and Drain Field-Plate

Ke, Jianhong; Lee, Ching-Sung; Li, Yuxuan; Hsu, Wei-Chou

doi:10.1109/jeds.2023.3294911

IEEE J. Electron Devices Soc.

2023

DOI: 10.1109/jeds.2023.3294911

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High-Breakdown P-Channel GaN MOS-HFETs With Al₂O₃-Dielectric and Drain Field-Plate

Jianhong Ke

Ching-Sung Lee

Yuxuan Li

et al.

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2024

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Comprehensive study of Schottky-gated p-channel GaN field-effect transistors

Chen,

Zhang,

et al. 2024

Applied Physics Letters

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In this work, a comprehensive study of Schottky-gated p-channel GaN field-effect transistors (GaN PFETs) with an energy-band modulated AlGaN barrier layer, a variable gate structure, and various densities of holes in the p-GaN layer is demonstrated to optimize electrical performance. The design rules for high-performance Schottky-gated GaN PFETs not only offer diverse pathways to achieve enhancement-mode operation but also improve output current density. Based on the design rules, a high-performance enhancement-mode GaN PFET with a high ION/IOFF ratio of 3 × 106, a low SS of 130 mV/dec, and a negative VTH of −1.09 V is fabricated, which is conducive to promoting the development of the low-power GaN complementary metal–oxide–semiconductor driving circuits.

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Comprehensive study of Schottky-gated p-channel GaN field-effect transistors

Chen,

Zhang,

et al. 2024

Applied Physics Letters

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show abstract

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High-Breakdown P-Channel GaN MOS-HFETs With Al₂O₃-Dielectric and Drain Field-Plate

Cited by 1 publication

References 30 publications

Comprehensive study of Schottky-gated p-channel GaN field-effect transistors

Comprehensive study of Schottky-gated p-channel GaN field-effect transistors

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High-Breakdown P-Channel GaN MOS-HFETs With Al2O3-Dielectric and Drain Field-Plate

Cited by 1 publication

References 30 publications

Comprehensive study of Schottky-gated p-channel GaN field-effect transistors

Comprehensive study of Schottky-gated p-channel GaN field-effect transistors

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High-Breakdown P-Channel GaN MOS-HFETs With Al₂O₃-Dielectric and Drain Field-Plate