High-breakdown voltage Al _0.66 In _0.34 As _0.85 Sb _0.15 /In _0.75 Ga _0.25 As/InPheterostructure field-effect transistors

Thermal-stability performance of a metamorphic high electron mobility transistor (MHEMT) with non-annealed Ohmic contacts

“…InAlAs/InGaAs high electron mobility transistors (HEMTs) on InP substrate have demonstrated excellent high frequency characteristics especially for low noise applications in the microwave and millimeter wave range [1,2]. On the other hand, to acquire such high performance devices on cheaper and less brittle GaAs substrates, the metamorphic buffer layers have been widely used [3,4].…”

On the n+-GaAs/p+-InGaP/n--GaAs High-Barrier Camel-Like Gate Transistor for High-Breakdown, Low-Leakage and High-Temperature Operations

“…On the other hand, high-temperature electronic devices are required for aircraft, automotive, space, and other applications under harshly thermal environments [7], [8]. Many devices such as MESFET and HEMT with high-temperature operation capability have been studied and reported [7], [8].…”

“…Many devices such as MESFET and HEMT with high-temperature operation capability have been studied and reported [7], [8]. However, the studies of high-temperature characteristics of high-barrier camel-like gate FETs are rarely found.…”

Off-state breakdown characteristics of InGaP-based high-barrier gate heterostructure field-effect transistors

“…For HFETs, the breakdown voltage can be enhanced by increasing the effective gate Schottky barrier height to improve carrier confinement [2,6]. On the other hand, the off-state breakdown is one of the major factors limiting the application of the power amplifier [7].…”

“…Device B is produced based on a camel-like FET structure [9]. Due to the use of n + -GaAs/p -InGaP/n-GaAs camel-like structure as the gate layer, the barrier height is higher than conventional Schottky gate layers [2,6]. This indeed enhances the breakdown characteristics.…”