This paper presents an overview and perspective on processing technologies required for continued scaling of leading edge and emerging semiconductor devices. We introduce the main drivers and trends affecting future semiconductor device scaling and provide examples of emerging devices and architectures that may be implemented within the next 10-20 yr. We summarize multiple active areas of research to explain how future thin film deposition, etch, and patterning technologies can enable 3D (vertical) power, performance, area, and cost scaling. Emerging and new process technologies will be required to enable improved contacts, scaled and future devices and interconnects, monolithic 3D integration, and new computing architectures. These process technologies are explained and discussed with a focus on opportunities for continued improvement and innovation.

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We proposed a simple method to reduce the current crowding effect of nitride-based light emitting diodes ͑LEDs͒ without extra dry etching and refill. It was found that we can achieve much better current spreading by inserting an insulating SiO 2 layer between the epitaxial layer and the p-pad electrode. It was also found that we can enhance light output intensity by 22%. Furthermore, it was found that 20 mA forward voltage only increased slightly from 3.32 to 3.37 V with the insertion of the SiO 2 layer. The reliability of the proposed LED is also good.

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A novel and high-performance Pd/oxide/GaAs hydrogen sensor based on a metal-insulator-semiconductor field-effect transistor (MISFET) is fabricated and studied. In the presence of the interfacial oxide, high sensitivity and significant increase in output drain current are observed. In the presence of hydrogen, a 2 × 200 µm 2 gate dimension device shows good dc characteristics including high turn-on voltage, an obvious variation of drain current and a short response time. In addition, under the applied voltage of −4 V and 537 ppm hydrogen in air, a very high sensitivity of 9473 is obtained. This performance shows that the device studied has a good potential for high-speed and high-sensitivity hydrogen sensor and MISFET integrated circuit applications.