Stress evolution of Ni/Pd/Si reaction system under isochronal annealing

Improvement in NiSi/Si contact properties with C-implantation

“…Agglomeration of polycrystalline NiSi occurs over 650°C, which leads to increasing sheet resistance [3,4]. In order to stabilize NiSi, the incorporation processes of the third elements such as Pt, Pd, Ti, N and SiO 2 into Ni/Si system were reported [5][6][7][8][9]. On the other hand, incorporation of C into Si promises several advantages for Si devises, such as energy band engineering [10], controlling impurity diffusion in Si and SiGe substrates [11], and the introduction of the tensile-strain in a Si channel [12].…”

Study of an amperometric glucose sensor based on Pd–Ni/SiNW electrode

“…First, high volume ratio of Pd-Ni/SiNW electrode increases the activity surface, accelerating the electron-transfer reaction, lowering the activation energy. Second, after annealed at 350 • C for 300 s, the Ni-Si layer located between the Ni and silicon nanowire (SiNW) interface has been formed, which prevents the electrode from etching by OH − ions and improves the electrode stability [20,26]. Third, the Pd-Ni particles are deposited onto the SiNWs with high uniformity and good dispersion, indicating that a large amount of Pd-Ni nanoparticles participate in the reaction and result in high activity.…”

An electrochemical methanol sensor based on a Pd–Ni/SiNWs catalytic electrode

“…The electrode annealed at 400 • C can form the NiSi layer between the Ni and SiNWs interface, which is resistant to OH − etching and improves the electrode stability [37,38].…”