High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior

Saito, Wataru; Takada, Yoshiharu; Kuraguchi, Masahiko; Tsuda, Koji; Omura, Ichiro; Ogura, T.; Ohashi, Hiromichi

doi:10.1109/ted.2003.819248

Cited by 399 publications

(235 citation statements)

References 11 publications

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“…Since HPAB is placed close to phonon source, this is local value at a site (e.g. drain-source channel in high-mobility electron transistors) [38,39].…”

Section: Resultsmentioning

confidence: 99%

Heterobarrier for converting hot-phonon energy to electric potential

2013

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We show that hot phonons emitted in energy conversion or resistive processes can be converted to electric potential in heterobarrier structures. Using phonon and electron interaction kinetics and self-consistent ensemble Monte Carlo, we find the favorable conditions for unassisted absorption of hot phonons and design graded heterobarriers for their direct conversion into electric energy. Tandem barriers with nearly optical-phonon height allow for substantial potential gain without current loss. We find that 19% of hot phonons can be harvested with an optimized GaAs/Al x Ga 1−x As barrier structure over a range of current and electron densities, thus enhancing the overall energy conversion efficiency and reducing waste heat.

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“…Since HPAB is placed close to phonon source, this is local value at a site (e.g. drain-source channel in high-mobility electron transistors) [38,39].…”

Section: Resultsmentioning

confidence: 99%

Heterobarrier for converting hot-phonon energy to electric potential

2013

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“…AlGaN/GaN heterojunction field-effect transistors (HFETs) are great candidates for next generation power switching applications in various power electronics due to superior physical properties such as high mobility, high breakdown field, and high carrier concentration [1][2][3][4][5]. In order to fulfill the maximum power conversion efficiency of AlGaN/GaN based power devices, the parasitic effects such as parasitic inductance caused by interconnection between devices must be minimized [6].…”

Section: Introductionmentioning

confidence: 99%

Diode Embedded AlGaN/GaN Heterojuction Field-Effect Transistor

Park¹,

Lee²,

Cho³

et al. 2016

JSTS:Journal of Semiconductor Technology and Science

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“…Its excellent material properties deliver breakdown voltage and specific onresistance beyond the material limits of silicon and silicon carbide semiconductors [2,3]. In order to compete with the market-dominating Si-based power devices such as power junction MOSFETs and IGBTs, GaN-on-Si technology which enables low-cost fabrication and large-diameter wafer is a focus of intensive research and GaN power devices on silicon substrate are frequently reported for high power switching application [4][5][6]. GaN-based transistors have been intensively developed and are being commercialized in the area of high frequency applications over X-band.…”

Section: Introductionmentioning

confidence: 99%

Temperature-Dependent Instabilities of DC characteristics in AlGaN/GaN-on-Si Heterojunction Field Effect Transistors

Keum

Choi²,

Kang³

et al. 2014

JSTS:Journal of Semiconductor Technology and Science

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Abstract-We have performed reverse gate bias stress tests on AlGaN/GaN-on-Si Heterostructure FETs (HFETs). The shift of threshold voltage (V th ) and the reduction of on-current were observed from the stressed devices. These changes of the device parameters were not permanent. We investigated the temporary behavior of the stressed devices by analyzing the temperature dependence of the instabilities and TCAD simulation. As the baseline temperature of the electrical stress tests increased, the changes of the V th and the on-current were decreased. The on-current reduction was caused by the positive shift of the V th and the increased resistance of the gate-to-source and the gate-to-drain access region. Our experimental results suggest that electrontrapping effect into the shallow traps in devices is the main cause of observed instabilities.

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High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior

Cited by 399 publications

References 11 publications

Heterobarrier for converting hot-phonon energy to electric potential

Heterobarrier for converting hot-phonon energy to electric potential

Diode Embedded AlGaN/GaN Heterojuction Field-Effect Transistor

Temperature-Dependent Instabilities of DC characteristics in AlGaN/GaN-on-Si Heterojunction Field Effect Transistors

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