This study theoretically and experimentally indicates that a charge pump rectifier for lowpower rectifiers such as RF-ID can be applied to high-power rectifiers and can attain the same level of RF-dc conversion efficiency and twice as high power rectification as the single-shunt rectifiers. A high-power rectifier is primarily a single-shunt rectifier, and a charge pump rectifier that applies twice the output voltage is used in low-power applications such as RF-ID. We aim to enhance the power of charge pump rectifiers by focusing on their characteristics. A fabricated 5.8 GHz charge pump rectifier achieved an RF-dc conversion efficiency of 70.8% at an input power of 8.0 W and a load resistance of 150 . This result is also the highest efficiency for 39 dBm rectifiers in the 5.8 GHz band. Compared to a single-shunt rectifier with the same diode, the charge pump rectifier generated twice the input power and efficiency difference of 2.9% at the maximum input power. These results indicate that the charge pump rectifier has an advantage over the single-shunt rectifier in high-power rectifiers.INDEX TERMS Rectifiers, RF circuits, Schottky diodes, wireless power transmission, circuit theory.This article has been accepted for inclusion in a future issue of this journal. Content is final as presented, with the exception of pagination.