2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) 2015
DOI: 10.1109/rfit.2015.7377933
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High breakdown voltage GaAs schottky diode for a high efficiency rectifier in microwave power transmission systems

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Cited by 7 publications
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“…The maximum input power of the charge pump rectifier is 8.0 W with an RF-dc conversion efficiency of 70.8%. This rectifier has the highest efficiency for 39 dBm rectifiers in the 5.8 GHz band, as shown in Table 3 [11], [12], [13], [17], [18]. When the maximum input power of the charge pump rectifier and the single-shunt rectifier were compared, the charge pump rectifier was twice as powerful.…”
Section: Experimental Results Of the Charge Pump Rectifier And Compar...mentioning
confidence: 99%
“…The maximum input power of the charge pump rectifier is 8.0 W with an RF-dc conversion efficiency of 70.8%. This rectifier has the highest efficiency for 39 dBm rectifiers in the 5.8 GHz band, as shown in Table 3 [11], [12], [13], [17], [18]. When the maximum input power of the charge pump rectifier and the single-shunt rectifier were compared, the charge pump rectifier was twice as powerful.…”
Section: Experimental Results Of the Charge Pump Rectifier And Compar...mentioning
confidence: 99%