High-breakdown-voltage MESFET with a low-temperature-grown GaAs passivation layer and overlapping gate structure

Chen, C.-L.; Mahoney, L.J.; Manfra, Michael J.; Smith, F. W.; Temme, D.H.; Calawa, A. R.

doi:10.1109/55.145076

Cited by 43 publications

(9 citation statements)

References 6 publications

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“…Field-plates (FPs) are used in Si and III-V technologies [4] have been presented for AlGaN/GaN HEMT technology. The FP reduces the peak electric field at the gate, enabling both higher operating breakdown voltage [5] and reduced dispersion [6], leading to higher output power densities and PAE.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and characterization of field-plated buried-gate SiC MESFETs

Andersson

Sudow

Nilsson

et al. 2006

IEEE Electron Device Lett.

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Silicon carbide (SiC) MESFETs were fabricated using a standard SiC MESFET structure with the application of the "buried-channel" and field-plate (FP) techniques in the process. FPs combined with a buried-gate are shown to be favorable concerning output power density and power-added efficiency (PAE), due to higher breakdown voltage and decreased output conductance. A very high power density of 7.8 W/mm was measured on-wafer at 3 GHz for a two-finger 400-µm gate periphery SiC MESFET. The PAE for this device was 70% at class AB bias. Two-tone measurements at 3 GHz ± 100 kHz indicate an optimum FP length for high linearity operation.Index Terms-Buried-gate, field-plate (FP), microwave power, silicon carbide (SiC) MESFET.

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Section: Introductionmentioning

confidence: 99%

Fabrication and characterization of field-plated buried-gate SiC MESFETs

Andersson

Sudow

Nilsson

et al. 2006

IEEE Electron Device Lett.

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“…Various technologies have been developed in the more mature GaAs material system to increase the breakdown voltage, including insulated gate [5], recessed gate [6], [7], overlapping gate [8], field plate (FP) over a stepped insulator [9], and field-modulating plate over an insulator [10]. Similar techniques are under development in GaN-based transistors, demonstrating good results.…”

mentioning

confidence: 99%

High Breakdown Voltage AlGaN–GaN HEMTs Achieved by Multiple Field Plates

Xing

Dora

Chini

et al. 2004

IEEE Electron Device Lett.

326

141

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Abstract-High-voltage Al 0 22 Ga 0 78 N-GaN high-electron mobility transistors have been fabricated using multiple field plates over dielectric passivation layers. The device breakdown voltage was found to increase with the addition of the field plates. With two field plates, the device showed a breakdown voltage as high as 900 V. This technique is easy to apply, based on the standard planar transistor fabrication, and especially attractive for the power switching applications.Index Terms-Breakdown voltage, field-effect transistors (FETs), field plates, high-electron mobility transistors (HEMTs), passivation, power electronics.

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“…1, is as high as 52 V at room temperature. This value is significantly higher than those of LTG MISFET (42 V) [3], MJFET (20 V) [4], JHEMT (31 V) [5], and n + -GaAs/p + -GaAs CAMFET (21 V) [6] with the same or larger gate length. Thus, the camel-like heterostructure gate FET is one of the prominent candidates to achieve the high breakdown behaviors.…”

Section: Resultsmentioning

confidence: 76%

“…However, these reduce the current drivability and hence decrease the output power. Therefore, several structures have been reported to improve breakdown voltage without decreasing current drivability such as the metal-insulator-semiconductor FETs (MISFETs) with low temperature grown (LTG) technology [3], metal-junction FETs (MJFETs) [4], junction-modulated HEMTs (JHEMTs) [5], and camel-gate FETs (CAMFETs) [6]. Among these structures, the CAMFETs, as compared with MESFET and HEMT, have several advantages [6] including the (1) elimination of difficulty in making the high-quality metal-semiconductor contact, (2) relative ease of adjusting the barrier height, and (3) improvement of the reliability in adverse environments.…”

Section: Introductionmentioning

confidence: 99%

On the n+-GaAs/p+-InGaP/n--GaAs High-Barrier Camel-Like Gate Transistor for High-Breakdown, Low-Leakage and High-Temperature Operations

Liu

Chuang

et al. 2002

32nd European Solid-State Device Research Conference

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A new field-effect transistor using an n + -GaAs/p + -InGaP/n-GaAs high-barrier camel-like gate and GaAs/InGaAs heterostructure-channel has been fabricated successfully and demonstrated. Experimentally, an ultra high gate-drain breakdown voltage of 52 V and a high drain-source operation voltage over 20 V with low leakage currents are obtained for a 1 j 100 ôm 2 device. Furthermore, the studied device also shows high breakdown behaviors at high temperature environment and good microwave characteristics. Therefore, based on these good characteristics, the studied device is suitable for high-breakdown, low-leakage and high-temperature applications.

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High-breakdown-voltage MESFET with a low-temperature-grown GaAs passivation layer and overlapping gate structure

Cited by 43 publications

References 6 publications

Fabrication and characterization of field-plated buried-gate SiC MESFETs

Fabrication and characterization of field-plated buried-gate SiC MESFETs

High Breakdown Voltage AlGaN–GaN HEMTs Achieved by Multiple Field Plates

On the n+-GaAs/p+-InGaP/n--GaAs High-Barrier Camel-Like Gate Transistor for High-Breakdown, Low-Leakage and High-Temperature Operations

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