High-Brightness 2.X μm Semiconductor Lasers

Rattunde, M.; Kelemen, M.T.; Schulz, N.; Pfahler, Christian; Manz, C.; Schmitz, J.; Kaufel, G.; Wagner, J.

doi:10.1007/978-1-4020-6463-0_6

Cited by 5 publications

(4 citation statements)

References 13 publications

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“…Semiconductor lasers emitting around 2 µm are of considerable interest for a multitude of applications such as medical diagnostics, material processing, or spectroscopic trace gas detection. Based on the (AlGaIn)(AsSb) material class various designs with emission wavelength from 1.8 up to 3 µm have been presented, including diode lasers as well as VECSEL devices 30–35.…”

Section: (Algain)(assb)‐based Lasers For Long Wavelengthsmentioning

confidence: 99%

Quantum modeling of semiconductor gain materials and vertical‐external‐cavity surface‐emitting laser systems

Bückers

Kühn

Schlichenmaier

et al. 2010

Physica Status Solidi (b)

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This version is available at https://strathprints.strath.ac.uk/35896/ Strathprints is designed to allow users to access the research output of the University of Strathclyde. Unless otherwise explicitly stated on the manuscript, Copyright © and Moral Rights for the papers on this site are retained by the individual authors and/or other copyright owners. Please check the manuscript for details of any other licences that may have been applied. You may not engage in further distribution of the material for any profitmaking activities or any commercial gain. You may freely distribute both the url (https://strathprints.strath.ac.uk/) and the content of this paper for research or private study, educational, or not-for-profit purposes without prior permission or charge.Any correspondence concerning this service should be sent to the Strathprints administrator: strathprints@strath.ac.ukThe Strathprints institutional repository (https://strathprints.strath.ac.uk) is a digital archive of University of Strathclyde research outputs. It has been developed to disseminate open access research outputs, expose data about those outputs, and enable the management and persistent access to Strathclyde's intellectual output. This article gives an overview of the microscopic theory used to quantitatively model a wide range of semiconductor laser gain materials. As a snapshot of the current state of research, applications to a variety of actual quantum-well systems are presented. Detailed theoryexperiment comparisons are shown and it is analysed how the theory can be used to extract poorly known material parameters. The intrinsic laser loss processes due to radiative and non-radiative Auger recombination are evaluated microscopically.The results are used for realistic simulations of verticalexternal-cavity surface-emitting laser systems. To account for nonequilibrium effects, a simplified model is presented using pre-computed microscopic scattering and dephasing rates. Prominent deviations from quasi-equilibrium carrier distributions are obtained under strong in-well pumping conditions.

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Section: (Algain)(assb)‐based Lasers For Long Wavelengthsmentioning

confidence: 99%

Quantum modeling of semiconductor gain materials and vertical‐external‐cavity surface‐emitting laser systems

Bückers

Kühn

Schlichenmaier

et al. 2010

Physica Status Solidi (b)

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“…The applications range from environmental pollution monitoring, stand-off detection of hazardous materials through to medical diagnostics. However, with increasing wavelength, effects such as non-radiative Auger recombination and the decreasing confinement of carriers within the valence-band of the QWs detrimentally affect the lasing parameters such as threshold, efficiency and maximum operating temperature of III-V QW lasers [88]. To circumvent these mechanisms, alternative methods to realise mid-infrared semiconductor lasers have been explored, the most prominent being the quantum cascade laser (QCL) [89].…”

Section: Lead-chalcogenide-based Opsdlsmentioning

confidence: 99%

High‐brightness long‐wavelength semiconductor disk lasers

Schulz¹,

Hopkins

Rattunde

et al. 2008

Laser & Photonics Reviews

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121

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A review on the recent developments in the field of long-wavelength (λ > 1.2 μm) high-brightness opticallypumped semiconductor disk lasers (OPSDLs) is presented. As thermal effects have such a crucial impact on the laser performance particular emphasis is given to modelling the thermal behaviour and optimisation of the heat-sinking. Selected OPSDL devices, realized in different III-V and IV-VI semiconductor material systems, with corresponding emission wavelengths between 1.2 μm and 5.3 μm are presented. Specific applications in this broad spectral range are addressed and methods to obtain high output power are discussed in terms of the underlying material properties and device operating principles.Schematic OPSDL setup, two-dimensional far-field profile of an emitted beam and typical emission spectrum of an (AlGaIn)(AsSb)-based OPSDL.

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“…These activities eventually led to the development of OPSDLs based on group-III-antimonides [1]. As already shown for diode lasers, using GaInSb or GaInAsSb quantum well (QW) layers enables coverage of a broad range of emission wavelengths in the near-to-mid-infrared (NIR-to-MIR) spectral range between 1.9 µm and 3.3 µm [2][3][4]. While early III-Sb-based OPSDLs exhibited moderate output power at wavelengths around 2.1 µm [5], continuous advancements in III-Sb-based OPSDL technology led to multi-Watt operation in the 2.0-to-2.3 µm wavelength band [6,7] and maximum emission wavelengths of up to 2.8 µm.…”

Section: Introductionmentioning

confidence: 99%

GaSb-based optically pumped semiconductor disk lasers emitting in the 2.0-2.8 Âµm wavelength range

Rosener

Rattunde

Moser

et al. 2010

Solid State Lasers XIX: Technology and Devices

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In recent years, optically pumped semiconductor disk lasers (OPSDLs) have attracted increasing interest due to their capability of delivering simultaneously high output power and excellent beam quality. Here we report on group-III-Sbbased OPSDLs allowing to cover the wavelength range around and above 2 µm. First the current state-of-the-art and recent progress for OPSDLs emitting in the 2.0-to-2.3 µm spectral range is presented, which includes power scaling through the use of multiple gain elements and as well as spectral tuning and line width narrowing, exploiting in both cases the versatility of the external cavity concept. Then, results on III-Sb-based OPSDLs emitting at 2.8 µm with a cw output power of up to 0.12 W and a peak output power in pulsed mode of >0.5 W, both data referring to roomtemperature operation, are presented. In both cases, the active region of the OPSDL chip consists of compressively strained GaInAsSb quantum well (QW) layers embedded between AlGaAsSb barrier and pump-light-absorbing layers. The emission wavelength is controlled by adjusting the composition of the quaternary QW material. The active region is grown on top of an epitaxial GaSb/AlAsSb Bragg mirror. For efficient heat extraction, SiC intra-cavity heat spreaders were bonded to the surface of the cleaved laser chips. An N-shaped resonator with one OPSDL chip acting as an end mirror and the second OPSDL chip as a folding mirror was used for power scaling, while a V-shaped resonator configuration with a birefringent tuner inserted into the collimated beam path of the resonator was employed for wavelength tuning. Optical pumping was achieved by standard fiber-coupled diode laser modules emitting at 980 nm.

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High-Brightness 2.X μm Semiconductor Lasers

Cited by 5 publications

References 13 publications

Quantum modeling of semiconductor gain materials and vertical‐external‐cavity surface‐emitting laser systems

Quantum modeling of semiconductor gain materials and vertical‐external‐cavity surface‐emitting laser systems

High‐brightness long‐wavelength semiconductor disk lasers

GaSb-based optically pumped semiconductor disk lasers emitting in the 2.0-2.8 Âµm wavelength range

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