High brightness GaInAs/(Al)GaAs quantum-dot tapered lasers at 980 nm with high wavelength stability

Auzanneau, S.C.; Calligaro, M.; Krakowski, M.; Klopf, F.; Deubert, S.; Reithmaier, Johann Peter; Forchel, A.

doi:10.1063/1.1650913

Cited by 19 publications

(7 citation statements)

References 14 publications

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“…That this is possible was shown already in a previous work with quantum dot laser material emitting at 980 nm [10] where a temperature coefficient of <0.09 nm/K was obtained with a cw output power of 2 W and an M 2 value of 3.4.…”

Section: Introductionmentioning

confidence: 80%

Wavelength stabilized quantum dot lasers for high power applications

Pavelescu

Reithmaier

Kaiser

et al. 2009

Physica Status Solidi (b)

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GaInAs/GaAs quantum dot lasers were developed with emission wavelengths of about 920 nm for high power high brightness applications. The laser structure and active dot layer was engineered in a way which allow a record‐low value of the temperature dependence of the emission wavelength with a temperature coefficient of 0.08 nm/K, i.e., about 4 times lower than quantum well lasers. Tapered lasers were fabricated with single lobe output in cw of more than 3 W. By additional distributed Bragg gratings, single mode output powers with >45 dB sidemode suppression and more than 1 W in cw could be obtained, which allow a stable single mode operation between 15–80 °C. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Introductionmentioning

confidence: 80%

Wavelength stabilized quantum dot lasers for high power applications

Pavelescu

Reithmaier

Kaiser

et al. 2009

Physica Status Solidi (b)

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show abstract

“…This will again provide great advantage in its ability in fibre coupling. The M²-factor of the laser is calculated based on the emission wavelength, the divergence angle of the experimental farfield at 1/e² and the width of the experimental near-field at waist at 1/e² [13]. Figure 9 plots the calculated M² values against the normalised current.…”

Section: Resultsmentioning

confidence: 99%

Monolithic integration of collimating Fresnel lens for beam quality enhancement in tapered high-power laser diode

et al. 2006

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“…In previous works, a reduced wavelength shift has been achieved, either based on broad-area [2] or tapered [3] QDots single emitters. In this work, which is the first realisation of a QDots laser mini-bar, the shift of the emission wavelength is 0.21 nm/K, in comparison with 0.3 nm/K on standard quantum well lasers.…”

Section: Introductionmentioning

confidence: 98%