High brightness GaSb-based optically pumped semiconductor disk lasers at 2.3 μm

Rattunde, M.; Schulz, N.; Ritzenthaler, C.; Rosener, B.; Manz, C.; Köhler, K.; Wörner, E.; Wagner, J.

doi:10.1117/12.699208

Cited by 7 publications

(6 citation statements)

References 5 publications

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“…Stephan W. Koch, 1 Angela Thränhardt, 2 Jörg Hader, 3 A microscopically motivated nonequilibrium theory is applied to study the power characteristics of an in-well pumped vertical external cavity surface emitting Laser for varying pump energies. Dynamic simulations yield steady state nonequilibrium carrier distributions resulting in gain reduction due to kinetic hole burning.…”

Section: Microscopic Simulation Of Nonequilibrium Features In Quantummentioning

confidence: 99%

Microscopic simulation of nonequilibrium features in quantum-well pumped semiconductor disk lasers

Kühn¹,

Koch²,

Thränhardt³

et al. 2010

Applied Physics Letters

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Section: Microscopic Simulation Of Nonequilibrium Features In Quantummentioning

confidence: 99%

Microscopic simulation of nonequilibrium features in quantum-well pumped semiconductor disk lasers

Kühn¹,

Koch²,

Thränhardt³

et al. 2010

Applied Physics Letters

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“…creating electron-hole pairs that diffuse and are captured by the QWs -producing optical gain. In (AlGaIn)(AsSb)based OPSDLs, the most common barrier layer material is Al 0.30 Ga 0.70 As 0.024 Sb 0.976 [26,27] and the total thickness of the active region is typically on the order of 2 μm. For this thickness, more than 90% of the incident pump radiation at a wavelength of 980 nm is absorbed.…”

Section: Semiconductor Epitaxial Layer Structurementioning

confidence: 99%

“…7 below shows the temperature rise in a 2.3 μm OPSDL structure as the thermal conductivity of the heatspreader is varied. Sapphire [34] and silicon carbide (SiC) [36] heatspreaders were first employed in this manner, but diamond [37] quickly became the heatspreader material of choice due to its unsurpassed thermal conductivity; however, cost and size constraints make SiC an attractive and efficient compromise [27].…”

Section: Thermal Managementmentioning

confidence: 99%

“…In order to compare and contrast the performance of the two main thermal management approaches detailed above, an FEA model was run for both situations based on a ten QW, 2.3 μm OPSDL pumped with 10 W at 980 nm. The structure and optical performance are described in [27], while the modelling and the parameters used are described in detail in [46]. Fig.…”

Section: Thermal Managementmentioning

confidence: 99%

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High‐brightness long‐wavelength semiconductor disk lasers

Schulz¹,

Hopkins

Rattunde

et al. 2008

Laser & Photonics Reviews

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121

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A review on the recent developments in the field of long-wavelength (λ > 1.2 μm) high-brightness opticallypumped semiconductor disk lasers (OPSDLs) is presented. As thermal effects have such a crucial impact on the laser performance particular emphasis is given to modelling the thermal behaviour and optimisation of the heat-sinking. Selected OPSDL devices, realized in different III-V and IV-VI semiconductor material systems, with corresponding emission wavelengths between 1.2 μm and 5.3 μm are presented. Specific applications in this broad spectral range are addressed and methods to obtain high output power are discussed in terms of the underlying material properties and device operating principles.Schematic OPSDL setup, two-dimensional far-field profile of an emitted beam and typical emission spectrum of an (AlGaIn)(AsSb)-based OPSDL.

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“…Currently, the emission wavelengths of GaSb SDLs cover the 1.96-2.8 μm spectral range [66,100]. At 2-2.35 μm the CW power levels have reached multiple watts [37,112] for near room temperature operation. The achieved output powers of 0.6 W at 2.5 μm and 0.1 W at 2.8 μm [66,72] have not yet reclaimed the position as such SDLs as high-power lasers.…”

Section: Wavelength Rangementioning

confidence: 99%

Semiconductor Disk Lasers: Recent Advances in Generation of Yellow-Orange and Mid-IR Radiation

Guina

Härkönen

Korpijärvi

et al. 2012

Advances in Optical Technologies

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We review the recent advances in the development of semiconductor disk lasers (SDLs) producing yellow-orange and mid-IR radiation. In particular, we focus on presenting the fabrication challenges and characteristics of high-power GaInNAs-and GaSbbased gain mirrors. These two material systems have recently sparked a new wave of interest in developing SDLs for high-impact applications in medicine, spectroscopy, or astronomy. The dilute nitride (GaInNAs) gain mirrors enable emission of more than 11 W of output power at a wavelength range of 1180-1200 nm and subsequent intracavity frequency doubling to generate yelloworange radiation with power exceeding 7 W. The GaSb gain mirrors have been used to leverage the advantages offered by SDLs to the 2-3 μm wavelength range. Most recently, GaSb-based SDLs incorporating semiconductor saturable absorber mirrors were used to generate optical pulses as short as 384 fs at 2 μm, the shortest pulses obtained from a semiconductor laser at this wavelength range.

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High brightness GaSb-based optically pumped semiconductor disk lasers at 2.3 μm

Cited by 7 publications

References 5 publications

Microscopic simulation of nonequilibrium features in quantum-well pumped semiconductor disk lasers

Microscopic simulation of nonequilibrium features in quantum-well pumped semiconductor disk lasers

High‐brightness long‐wavelength semiconductor disk lasers

Semiconductor Disk Lasers: Recent Advances in Generation of Yellow-Orange and Mid-IR Radiation

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