High brightness InGaN/GaN LEDs with indium‐tin‐oxide as p‐electrode

Chang, Chin Sung; Chang, Shoou‐Jinn; Su, Yan–Kuin; Lai, Wei–Chi; Kuo, Chih-Hung; Wang, C. K.; Lin, Yu‐Cheng; Hsu, Y.P.; Shei, Shih–Chang; Lo, H. M.; Ke, J.C.; Sheu, Jinn-Kong

doi:10.1002/pssc.200303384

Cited by 5 publications

(2 citation statements)

References 16 publications

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“…A procedure which is generally employed to form metal-based ohmic contacts on p-GaN is to use GaN layers with higher carrier concentration (in the range of 10 18 cm -3 ) than the ones used in this investigation. It has been reported that ITO can form an ohmic contact on p-GaN, with a carrier concentration in the range of 10 17 cm -3 , only (a) after special surface treatment of the GaN surface ( 23), (b) by using a short period of superlattice tunneling contact layer (24), or (c) by inserting various thin metal layers between the GaN/ITO interface (25). It is important to note that the temperature of 600 °C, where the ITON film exhibited the ohmic behavior, is apparently related to the temperature of around 550 °C where the film showed the fastest release of incorporated nitrogen.…”

Section: Resultsmentioning

confidence: 99%

Effect of Annealing on the Properties of Indium−Tin−Oxynitride Films as Ohmic Contacts for GaN-Based Optoelectronic Devices

Himmerlich

Koufaki

Ecke

et al. 2009

ACS Appl. Mater. Interfaces

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Indium-tin-oxynitride (ITON) films have been fabricated by rf sputtering from an indium-tin-oxide target in nitrogen plasma. The influence of postdeposition annealing up to 800 degrees C is analyzed by electrical, optical, and surface characterization of the films in comparison to indium-tin-oxide (ITO) films fabricated in argon plasma. High-temperature annealing resulted in ITO(N) films with similar carrier concentrations. However, the resistivity and optical transmittance of the ITON films were higher than those of the ITO films. Photoelectron spectroscopy revealed that nitrogen is incorporated into the ITON structure in an unbound state as well as through the formation of metal-nitrogen and oxynitride bonds that decorate oxygen vacancies. When the core level electron spectra of ITO and ITON films are compared, a correlation between carrier concentration and the incorporated nitrogen is found. Changes in ITON electrical properties are mainly induced by the release of nitrogen at temperatures above 550 degrees C. In this context, ohmic contact behavior was achieved for ITON on p-type GaN after annealing at 600 degrees C, while no ohmic contact could be realized using ITO.

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Section: Resultsmentioning

confidence: 99%

Effect of Annealing on the Properties of Indium−Tin−Oxynitride Films as Ohmic Contacts for GaN-Based Optoelectronic Devices

Himmerlich

Koufaki

Ecke

et al. 2009

ACS Appl. Mater. Interfaces

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“…Recently, the performance of the InGaN based wide band gap semiconductor optoelectronic devices such as blue light emitting diodes (LEDs) and blue-violet laser diodes (LDs) has been dramatically advanced and commercialized successfully [1][2][3] due to the improved growth technology, structures [4], transparent electrode [5], and characterization technology [6][7][8]. Especially, the photoluminescence (PL) measurement is very useful to characterize the epitaxial wafers with optoelectronic device structure.…”

Section: Introductionmentioning

confidence: 99%

Comparison between the Photoluminescence Mappings Under Selective and Non-selective Excitation and the Electroluminescence Mappings of the Epitaxial Wafers with InGaN-LED Structure

et al. 2006

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We compared the photoluminescence (PL) mappings of epitaxial wafers for light emitting diodes (LEDs) by using a He-Cd laser (325 nm line) and a laser diode (LD) with peak wavelength of 405 nm as excitation sources and the electroluminescence (EL) mappings of the same wafers. The samples were epitaxial wafers for blue and green InGaN-LEDs obtained in commercial. The wafers were fabricated into LEDs with a Ni/Au transparent p-type electrode and a Ti/Ni n-type electrode after the PL mapping measurements. The He-Cd laser performed the band to band excitation of (Al)GaN cladding and contact layers (non-selective excitation). Because the photo-excited carriers at the cladding and contact layers diffused into the multiquantum wells (MQWs) and contributed the PL emission by radiative recombination in the MQWs, the PL mapping under the influence of the (Al)GaN cladding and contact layers was obtained. On the other hand, the LD (405 nm) enable us to obtain the PL mapping under selective excitation of the MQWs without the influence of the cladding and contact layers. The PL mapping measurements were carried out at room temperature (RT) at the excitation power density of 310 W/cm 2 under non-selective excitation (by the He-Cd laser) and at that of 11.5 W/cm 2 under selective excitation (by the LD). The EL mapping was measured at a forward current of 20 mA at RT. The area of the wafer with high EL intensity was coincident with the area with the high PL intensity under selective excitation. Therefore, the PL mapping measurement under selective excitation of MQWs is recommended to characterize the epitaxial wafers and to estimate the device performance of InGaN-LEDs.Mater. Res. Soc. Symp. Proc. Vol. 955

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III-Nitride LED Chip Fabrication Techniques

Wang

et al. 2020

Springer Series in Materials Science

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High brightness InGaN/GaN LEDs with indium‐tin‐oxide as p‐electrode

Cited by 5 publications

References 16 publications

Effect of Annealing on the Properties of Indium−Tin−Oxynitride Films as Ohmic Contacts for GaN-Based Optoelectronic Devices

Effect of Annealing on the Properties of Indium−Tin−Oxynitride Films as Ohmic Contacts for GaN-Based Optoelectronic Devices

Comparison between the Photoluminescence Mappings Under Selective and Non-selective Excitation and the Electroluminescence Mappings of the Epitaxial Wafers with InGaN-LED Structure

III-Nitride LED Chip Fabrication Techniques

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