High brightness laser diode bars

Lichtenstein, N.; Manz, Yvonne; Müller, Jürgen; Troger, J.; Pawlik, Susanne; Thies, A.; Weiss, S.; Baettig, R.; Harder, C.

doi:10.1117/12.648721

Cited by 12 publications

(4 citation statements)

References 1 publication

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“…The CW power characteristics demonstrate an improved η E at similar output power compared to previous studies of wide-aperture lasers 19 : W = 800 µm, L = 3.6 mm, η E = 52% at P opt = 50 W, in spite of the current study using miniaturized packages with a 10x smaller heatsink footprint. The far-field angle of ≤ 12 • at P opt = 40 W is well suited for low-loss coupling into a multimode fiber.…”

Section: Device Measurementsupporting

confidence: 40%

Buried-regrown-implant-structure diode lasers with ultra-thick epitaxy for resistance to mounting stress without loss in efficiency

King,

Arslan,

Boni

et al. 2023

High-Power Diode Laser Technology XXI

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Section: Device Measurementsupporting

confidence: 40%

Buried-regrown-implant-structure diode lasers with ultra-thick epitaxy for resistance to mounting stress without loss in efficiency

King,

Arslan,

Boni

et al. 2023

High-Power Diode Laser Technology XXI

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“…Hard solders such as AuSn have been developed to rid the package of solder creep and whisker growth [3,4,5,6]. An earlier report details the differences of AuSn and Indium solders where it was shown that a 200 W bar with an operating junction temperature of j T < 60 ºC can be realized using AuSn mounting with a CuW CTE matched submount on a Microchannel Cooler (MCC) [3].…”

Section: Introductionmentioning

confidence: 98%

Passive cooling effects of low and high fill-factor 937 nm 1 cm arrays

et al. 2008

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Diode-pumped solid-state lasers are gaining acceptance as the desired laser source for materials processing as well as a host of new applications that are expanding rapidly. Because of this, the performance, stability and lifetime of the diodepump source face unprecedented scrutiny. Increasing the lifetime of the diode, while increasing power, remains a primary focus of the industry. One lifetime limiting issue is that of a voltage potential in the water cooling channels which can cause cooler degradation and lower efficiency over time. Studies have been carried out that explore different cooling approaches based on passive schemes where insulation layers are present to shield the voltage from the water channels. However, with the introduction of insulation layers, a reduction of the deployable power from that of microchannel coolers is seen. This report explores the effects of passive cooling approaches on the power and divergence of 1 cm AuSn/CuW mounted bars with fill factors ranging from 10% to 50%. It is shown that a 150 W array can be realized on a passive cooler and multiplexed to give a 1600 W stack. Thermal modeling is presented along with life-test data for passively cooled devices.

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“…Typically, "hard-pulsing" of high power lasers in the industry of materials processing is needed for process optimization, thus for the industry to utilize the recent advances in laser bar power, stable packaging systems are sought to deliver up to 200 W reliably throughout the desired lifetime. The instable In solder has delayed the introduction of 120W arrays to the market and has led some to study hard solders such as Gold Tin (AuSn) [3]. However, the use of such a hard solder dictates the use of an expansion matched submount which increases the thermal resistance.…”

Section: Introductionmentioning

confidence: 99%

Thermal and strain characteristics of high-power 940 nm laser arrays mounted with AuSn and In solders

et al. 2007

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As diode pumped solid state lasers gain more market share, the performance, stability and lifetime of the diode pump source faces unprecedented scrutiny. Lifetimes of diode pumps in excess of 35,000 hrs are sought with no intervention or maintenance from the end user. One lifetime and power limiting phenomena for arrays is that of solder creep typical with traditional mounting using soft solders such as Indium. Harder solders such as Gold/Tin on Copper-Tungsten submounts provide a more robust and stable mounting system for long term high power pump sources. Furthermore, beam multiplexing of laser bars require tight wavelength and polarization purity which are affected by mounting induced strain. In this investigation, high power 940 nm laser bars, operating in the 100 to 200 W power range, were mounted using AuSn/CuW and In soldering schemes. The differences in thermal and strain characteristics are investigated through the examination of the emitter wavelength, nearfield measurements, polarization and smile. The measurements are correlated with finite element modeling to predict the 3-dimensional thermal distributions within the laser bars.

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High brightness laser diode bars

Cited by 12 publications

References 1 publication

Buried-regrown-implant-structure diode lasers with ultra-thick epitaxy for resistance to mounting stress without loss in efficiency

Buried-regrown-implant-structure diode lasers with ultra-thick epitaxy for resistance to mounting stress without loss in efficiency

Passive cooling effects of low and high fill-factor 937 nm 1 cm arrays

Thermal and strain characteristics of high-power 940 nm laser arrays mounted with AuSn and In solders

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