High brightness nonpolar<i>a</i>-plane (11–20) GaN light-emitting diodes

Jung, Sukkoo; Chang, Young-Hak; Bang, Kyuhyun; Kim, Hyung-Gu; Choi, Yoon–Ho; Hwang, Sungmin; Baik, Kwang Hyeon

doi:10.1088/0268-1242/27/2/024017

Cited by 17 publications

(5 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Again, the biggest problem for semipolar LEDs is the material growth. Many results of semipolar green LEDs have been reported, [32][33][34][35][36][37][38][39][40] which are plotted in Fig. 8, accompanied by the results of nonpolar and polar LEDs.…”

Section: Reduction Of Polarization Effect On Semipolar Ganmentioning

confidence: 94%

Status of GaN-based green light-emitting diodes

Liu¹,

Zhang²,

Wang³

et al. 2015

Chinese Phys. B

View full text Add to dashboard Cite

GaN-based blue light emitting diodes (LEDs) have undergone great development in recent years, but the improvement of green LEDs is still in progress. Currently, the external quantum efficiency (EQE) of GaN-based green LEDs is typically 30%, which is much lower than that of top-level blue LEDs. The current challenge with regard to GaN-based green LEDs is to grow a high quality InGaN quantum well (QW) with low strain. Many techniques of improving efficiency are discussed, such as inserting AlGaN between the QW and the barrier, employing prestrained layers beneath the QW and growing semipolar QW. The recent progress of GaN-based green LEDs on Si substrate is also reported: high efficiency, high power green LEDs on Si substrate with 45.2% IQE at 35 A/cm2, and the relevant techniques are detailed.

show abstract

Section: Reduction Of Polarization Effect On Semipolar Ganmentioning

confidence: 94%

Status of GaN-based green light-emitting diodes

Liu¹,

Zhang²,

Wang³

et al. 2015

Chinese Phys. B

View full text Add to dashboard Cite

show abstract

“…Using an array of hexagonal SiO 2 patterns, high quality a -plane GaN have been achieved on sapphire substrates. Up to date, output powers of a few mini Watts at 20 mA have been reported for nonpolar InGaN LEDs grown on sapphire, though they are still much lower compared to c -plane polar LEDs 20,21 .…”

Section: Introductionmentioning

confidence: 99%

Optical and polarization properties of nonpolar InGaN-based light-emitting diodes grown on micro-rod templates

Bai¹,

Jiu²,

Poyiatzis³

et al. 2019

Sci Rep

View full text Add to dashboard Cite

We have demonstrated non-polar a -plane InGaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) on sapphire, achieved by overgrowing on a micro-rod template with substantially improved crystal quality. Photoluminescence measurements show one main emission peak at 418 nm along with another weak peak at 448 nm. Wavelength mapping measurements carried out by using a high spatial-resolution confocal PL system indicate that the two emissions origin from different areas associated with the underlying micro-rod patterns. Electroluminescence measurements exhibit a negligible blue-shift of 1.6 nm in the peak wavelength of the main emission when the driving current increases from 10 to 100 mA, indicating that the quantum confined Stark effect is effectively suppressed in in the nonpolar LED. A polarization ratio of 0.49 is obtained for the low-energy emission (~448 nm), while the main emission (~418 nm) shows a polarization ratio of 0.34. Furthermore, the polarization ratios are independent of injection current, while the energy separation between m-polarized and c-polarized lights increases with the injection current for both emissions.

show abstract

“…[1,2] Moreover, the device fabricated on traditional C-plane AlGaN suffers the large quantum confined Stark effect (QCSE), which is caused by the strong polarization effect in the [0001] growth direction. [7] The QCSE would lead to the spatial separation of electron and hole wave functions, reducing the optical transition probability and the device efficiency. [7] Therefore, without a polarization field in the growth direction, the AlGaN optoelectronic device may achieve a high device efficiency.…”

Section: Introductionmentioning

confidence: 99%

“…[7] The QCSE would lead to the spatial separation of electron and hole wave functions, reducing the optical transition probability and the device efficiency. [7] Therefore, without a polarization field in the growth direction, the AlGaN optoelectronic device may achieve a high device efficiency.…”

Section: Introductionmentioning

confidence: 99%

Aluminum incorporation efficiencies in A - and C -plane AlGaN grown by MOVPE

Han¹,

Li²,

Zhao³

et al. 2016

Chinese Phys. B

View full text Add to dashboard Cite

The aluminum incorporation efficiencies in nonpolar A-plane and polar C-plane AlGaN films grown by metalorganic vapour phase epitaxy (MOVPE) are investigated. It is found that the aluminum content in A-plane AlGaN film is obviously higher than that in the C-plane sample when the growth temperature is above 1070 • C. The high aluminum incorporation efficiency is beneficial to fabricating deep ultraviolet optoelectronic devices. Moreover, the influences of the gas inlet ratio, the V/III ratio, and the chamber pressure on the aluminum content are studied. The results are important for growing the AlGaN films, especially nonpolar AlGaN epilayers.

show abstract

High brightness nonpolara-plane (11–20) GaN light-emitting diodes

Cited by 17 publications

References 15 publications

Status of GaN-based green light-emitting diodes

Status of GaN-based green light-emitting diodes

Optical and polarization properties of nonpolar InGaN-based light-emitting diodes grown on micro-rod templates

Aluminum incorporation efficiencies in A - and C -plane AlGaN grown by MOVPE

Contact Info

Product

Resources

About