High-carrier-density electron dynamics in low-temperature-grown GaAs

Sosnowski, T.; Norris, T. B.; Wang, H. H.; Greniér, Philippe; Whitaker, J.F.; Sung, C.Y.

doi:10.1063/1.119138

Cited by 75 publications

(36 citation statements)

References 8 publications

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“…The initial fast exponential decay ( ~100 -300 fs), is caused by the thermalization of the carriers due to electron-phonon interactions and the time scale observed here is typical for III-V semiconductors 24,25,26 . This part of the signal may also have some significant contribution from the GaAs buffer layer and the substrate for λ 870 nm.…”

Section: A the Three Processesmentioning

confidence: 99%

Resonant state due to Bi in the dilute bismide alloyGaAs1−xBix

et al. 2014

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It has been theoretically predicted that isolated Bi forms a resonant state in the valence band of the dilute bismide alloy, GaAs 1-x Bi x . We present ultrafast pump-probe reflectivity measurements of this interesting alloy system which provide experimental evidence for the resonant state. The reflectivity transients for pump/probe wavelengths λ ~ 860 -900 nm has negative amplitude which we attribute to the absorption of the probe pulse by the pump induced carriers that are localized at the Bi resonant state. Our measurements show that the lifetime of carriers localized at the resonant state is ~ 200 ps at 10K.* rajeevkini@iisertvm.ac.in 2

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Section: A the Three Processesmentioning

confidence: 99%

Resonant state due to Bi in the dilute bismide alloyGaAs1−xBix

et al. 2014

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“…17 Relaxation processes of photoexcited carriers in LTGaAs have been studied by means of the pump-probe method. [18][19][20][21][22][23][24][25] According to these studies, photoexcited carriers are first trapped by excess As point defects in subpicoseconds and recombine in relatively long times in as-grown LT-GaAs. It is suggested that photoexcited electrons are trapped by positively ionized As Ga and holes are trapped by negatively ionized V Ga .…”

Section: Introductionmentioning

confidence: 98%

Electrical properties of nearly stoichiometric GaAs grown by molecular beam epitaxy at low temperature

Fukushima

Obata

Ōtsuka

2001

Journal of Applied Physics

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“…It can be seen that the relaxation time of fast decay and slow one is increased with pump fluence. This trend is expected for surface states filling [11], which may inhibit carrier lifetime. …”

Section: Resultsmentioning

confidence: 99%

Pump Fluence Dependence of Ultrafast Carrier Dynamics in Bulk ZnSe

Li¹,

Chu²,

Hu³

et al. 2015

Proceedings of the First International Conference on Information Science and Electronic Technology

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Abstract-Ultrafast carrier dynamics of bulk ZnSe is investigated by means of the optical-pump terahertz-probe spectroscopy with pump fluence ranging from 38 to 239 μJ/cm 2 at room temperature. With the laser pulse excitation at 400 nm, the negative transmission of terahertz pulse shows an ultrafast rising followed by a biexponential recovery. The relaxation time of fast decay and slow one is increased with pump fluence. This trend is expected for surface states filling, which may inhibit carrier lifetime.

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High-carrier-density electron dynamics in low-temperature-grown GaAs

Abstract: Articles you may be interested inTransient reflectivity as a probe of ultrafast carrier dynamics in semiconductors: A revised model for lowtemperature grown GaAs

Cited by 75 publications

References 8 publications

Resonant state due to Bi in the dilute bismide alloyGaAs1−xBix

Resonant state due to Bi in the dilute bismide alloyGaAs1−xBix

Electrical properties of nearly stoichiometric GaAs grown by molecular beam epitaxy at low temperature

Pump Fluence Dependence of Ultrafast Carrier Dynamics in Bulk ZnSe

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