High-coupling leaky SAWs on LiTaO&lt;inf&gt;3&lt;/inf&gt; thin plate bonded to quartz substrate

Kakio, Shoji; Gomi, Masashi; Hayashi, Junki; Suzaki, Haruka; Yonai, Toshifumi; Kishida, Kazuhito; Mizuno, Jun

doi:10.1109/ultsym.2017.8091566

Cited by 7 publications

(1 citation statement)

References 4 publications

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“…Thanks to both unique features, thin-film bulk acoustic resonators (FBARs) and surface acoustic wave (SAW) devices have become ubiquitous in 4G filters [6]. However, it is challenging to scale the incumbent acoustic platforms to the 5G bands above 4 GHz, unless resorting to complex designs [9], [10], intrinsically high-damping modes [11], [12], or higher-cost substrates [13]- [15].…”

Section: Introductionmentioning

confidence: 99%

Low-Loss 5-GHz First-Order Antisymmetric Mode Acoustic Delay Lines in Thin-Film Lithium Niobate

Yang

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et al. 2021

IEEE Trans. Microwave Theory Techn.

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In this work, we present the low-loss acoustic delay lines (ADLs) at 5 GHz, using the first-order antisymmetric (A1) mode in 128 • Y-cut lithium niobate thin films. The ADLs use a single-phase unidirectional transducer (SPUDT) design with a feature size of quarter acoustic wavelength. The design space is analytically explored and experimentally validated. The fabricated miniature A1 ADLs with a feature size of 0.45 µm show a high operating frequency at 5.4 GHz, a minimum insertion loss (IL) of 3 dB, a fractional bandwidth (FBW) of 1.6%, and a small footprint of 0.0074 mm 2. The low IL and high operating frequency have significantly surpassed the state-of-theart performance of ADLs. The propagation characteristics of A1 acoustic waves have also been extracted. The demonstrated designs can lead to low-loss and high-frequency transversal filters for future 5G applications in the sub-6-GHz bands.

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