High-Current Backside-Illuminated Photodiode Array Module for Optical Analog Links

Itakura, Shigetaka; Sakai, Kiyohide; Nagatsuka, Tsutomu; Ishimura, E.; Nakaji, M.; Otsuka, Hiroshi; Hirano, Y.

doi:10.1109/jlt.2009.2039772

Cited by 27 publications

(12 citation statements)

References 18 publications

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“…However, generation of signals at THz frequencies will always require smaller PDs, to reduce the RC limitation, reducing the power dissipation at which device damage occurs by perhaps an order of magnitude. To get around this problem, higher total optical power could be distributed to an array of PDs [41] with integrated antennas, thus also allowing shaping and steering of the THz beam by phased-array techniques. The THz power generated then becomes limited by the optical power available.…”

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confidence: 99%

Telecommunications technology-based terahertz sources

et al. 2010

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A review is presented of continuous-wave terahertz sources based on the optical heterodyne generation (photomixing) technique, that make use of optical components and fabrication techniques originally developed for the 1550 nm optical fibre telecommunications window. The uni-travelling carrier photodiode is identified as a key component for conversion of optical to terahertz power, and the state of the art is summarised in terms of terahertz power generated at various frequencies. An approach based on phase locking the heterodyned lasers is described, which enables terahertz signals to be generated with extremely high spectral purity and frequency accuracy, and progress in developing the photonic integrated circuits required for its implementation is reported. Finally, possible future developments in the field are discussed.Introduction: The terahertz (THz) band of the electromagnetic spectrum (100 GHz to 10 THz) is of great interest for understanding various chemical, biological, and astronomical phenomena through spectroscopic analysis [1,2], and has a range of technological applications [3], including materials, medical and security imaging and screening [4][5][6], and short-range, high capacity wireless communications [7]. A major impediment to rapid progress in these areas is the lack of availability of compact sources of THz radiation at low cost and with low power dissipation. This is particularly true of high spectral purity, high output power continuous-wave (CW) THz sources [8]. In this Letter, we summarise recent work on CW THz generation by photonic techniques, which leverages the mature, reliable components and fabrication and optical integration techniques that have been developed for optical fibre telecommunications.

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confidence: 99%

Telecommunications technology-based terahertz sources

et al. 2010

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“…Chou, and J.-W. Shi [6] reported about two cascaded photodiodes with similar structure and output performance 63 MW at 95 GHz [6]. Itakura et al demonstrated maximal output performance from 790 MW at 5 GHz with the use of a flip-chip of 4-diode matrices with monolithic integrated Wilkinson power combiner [7].…”

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confidence: 99%

Thermostabilized photodiode for monitoring radiation of medical lasers

Dobrovolsky¹

2015

Semicond. Phys. Quantum Electron. Optoelectron.

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“…Although significant previous work on high-power photodetector chip technology has been published, only a limited number of module demonstrations have been reported so far. Demonstrations of packaged modules based on a partially-depletedabsorber chip design reported high power levels of up to 25 dBm at 5 GHz in a TO-can package [9] and 29 dBm at 5 GHz in a butterfly package using an array of 8 PDs and a Wilkinson RF power combiner [10]. However, in [9] the 3-dB bandwidth of the modules was limited only to 8 GHz.…”

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confidence: 99%

High-Power and High-Linearity Photodetector Modules for Microwave Photonic Applications

Rouvalis

Baynes

Xie

et al. 2014

J. Lightwave Technol.

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We demonstrate hermetically packaged InGaAs/InP photodetector modules for high performance microwave photonic applications. The devices employ an advanced photodiode epitaxial layer known as the modified uni-traveling carrier photodiode (MUTC-PD) with superior performance in terms of output power and saturation. To further improve the thermal limitations, the MUTC-PDs were flip-chip bonded on high thermal conductivity substrates such as Aluminum Nitride (AlN) and Diamond. Modules using chips with active area diameters of 40, 28, and 20 μm were developed. The modules demonstrated a 3-dB bandwidth ranging from 17 GHz up to 30 GHz. In continuous wave mode of operation, very high RF output power was achieved with 25 dBm at 10 GHz, 22 dBm at 20 GHz, and 17 dBm at 30 GHz. In addition, the linearity of the modules was characterized by using the third order intercept point (OIP3) as a figure of merit. Very high values of OIP3 were obtained with 30 dBm at 10 GHz, 25 dBm at 20 GHz and more than 20 dBm at 30 GHz. Under short pulse illumination conditions and by selectively filtering the 10 GHz frequency component only, a saturated power of >21 dBm was also measured. A very low AM-to-PM conversion coefficient was measured, making the modules highly suitable for integration in photonic systems for ultralow phase noise RF signal generation.Index Terms-1-dB compression, Analog photonic links, highpower photodetectors, millimeter-wave source, modified unitraveling carrier photodiode (MUTC-PD), third-order intermodulation distortion (IMD3).

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High-Current Backside-Illuminated Photodiode Array Module for Optical Analog Links

Cited by 27 publications

References 18 publications

Telecommunications technology-based terahertz sources

Telecommunications technology-based terahertz sources

Thermostabilized photodiode for monitoring radiation of medical lasers

High-Power and High-Linearity Photodetector Modules for Microwave Photonic Applications

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