2017
DOI: 10.1002/adma.201606392
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High Current Injection into Dynamic p–n Homojunction in Polymer Light‐Emitting Electrochemical Cells

Abstract: Ions and electrons in blends of polymer-electrolyte can work in ensemble to operate light-emitting electrochemical cells (LECs), in which the unique features of in situ formed p-n homojunctions offer efficient charge injection and transport. However, electrochemical features give rise to significant stability and speed issues due to limited electrochemical stability and low ion mobility, resulting in low brightness and a slow response of LECs. Here, these issues are overcome by the separate control of ionic an… Show more

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Cited by 38 publications
(46 citation statements)
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References 37 publications
(47 reference statements)
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“…This preliminary test was performed by mixing the metallopolymers with the ionic liquid BMIM-PF 6 . Homogeneous thin films of the blends were obtained by spin-coating technique [21,24,63,64,65,66,67,68]. Interestingly, the addition of 10% wt.…”
Section: Resultsmentioning
confidence: 99%
“…This preliminary test was performed by mixing the metallopolymers with the ionic liquid BMIM-PF 6 . Homogeneous thin films of the blends were obtained by spin-coating technique [21,24,63,64,65,66,67,68]. Interestingly, the addition of 10% wt.…”
Section: Resultsmentioning
confidence: 99%
“…However, BSBCz still has room for improvement. First, BSBCz is practically insoluble while solution processability is highly desired and would facilitate not only low‐cost fabrication but also the fabrication of nanostructures, the dispersion of dyes into polymer matrices, and the mixing of dyes with electrolyte to produce light‐emitting electrochemical cells . Second, the electron affinity of BSBCz is relatively low because the molecular structure lacks electron‐withdrawing groups or electron‐accepting units, resulting in a low electron mobility and a wide energy gap of ≈3 eV.…”
Section: Introductionmentioning
confidence: 99%
“…In particular, the rapid increase in current at 1.2 V can be attributed to the threshold voltage for doping. 14,23) Further importantly, light emission was clearly observed by the IL application: the emission started to be observed at around 3.4 V. This indicates the realization of the simultaneous injections of electrons and holes. Importantly, the turn-on voltage of 3.4 V is almost the same as the bandgap energy E gap of GaN.…”
Section: Characterization Of Gan Single Crystalmentioning
confidence: 80%