High-Current Perovskite Oxide BaTiO₃/BaSnO₃ Heterostructure Field Effect Transistors

High- k perovskite gate oxide for modulation beyond 10 14 cm −2

“…There were attempts to modulate the carrier density over 10 14 cm −2 using solid-state oxides with very high dielectric constant, such as BTO and SrTiO 3 (37)(38)(39). Depletion-mode FETs using BTO as the gate dielectric were recently reported (37).…”

“…There were attempts to modulate the carrier density over 10 14 cm −2 using solid-state oxides with very high dielectric constant, such as BTO and SrTiO 3 (37)(38)(39). Depletion-mode FETs using BTO as the gate dielectric were recently reported (37). However, the capability of the device to modulate the charge density was only 5.7 × 10 13 cm −2 , and the off-state gate leakage current was 11.0 mA mm −1 at V g = −6 V corresponding to 1.72×10 3 A cm −2 at −3 MV cm −1 , which is too high to be used in practical applications.…”

Review on Perovskite Semiconductor Field–Effect Transistors and Their Applications

“…A top gate bottom contact (TGBC) thin-film FET was fabricated by placing a gate electrode on top of perovskite semiconducting channel, where the device was fabricated based on the substrate, as shown in Figure 4c, in search of constructing a hysteresis-free device [69] in the fabrication and characterization of ferroelectric gate FET [70]. In addition, the all inorganic BaSnO 3 perovskites was tested as a channel material in a top gate top contact (TGTC) device in [71]. The position of injecting electrodes and the difference in certain interface contacts from one structure to another may affect the performance and the behavior of the FET device [66].…”

Post-annealing optimization of the heteroepitaxial La-doped SrSnO3 integrated on silicon via ALD

“…[15][16][17][18][19][20][21] In 2012, Kim et al demonstrated that the mobility of the bulk La-doped BSO single-crystal 22 could reach up to 320 cm 2 V −1 s −1 compared to 120-180 cm 2 V −1 s −1 of the La-doped BSO single-crystal thin films at RT. [23][24][25] The high mobility enables the integration of BSO or La-doped BSO as the conductive channel with various high-κ perovskites, such as SrTiO 3 (STO), 26 BaHfO 3 , 27 LaInO 3 , 28 and BaTiO 3 (BTO), 29 as the gate dielectric. By utilizing only the perovskite oxides, the performance of BSO-based heterojunctions is superior to conventional semiconductor material systems, such as Si and AlGaN/GaN in the high-frequency power field.…”

“…By utilizing only the perovskite oxides, the performance of BSO-based heterojunctions is superior to conventional semiconductor material systems, such as Si and AlGaN/GaN in the high-frequency power field. 29,30 Additionally, STO and BTO perovskites can be grown epitaxially on Si (001) 31,32 and can be compatible with Si-based CMOS technology, providing an expanded route to design next-generation devices for perovskite heterojunctions integrated on Si. 33,34 However, the defects at the interface caused by the perovskite lattice mismatch may restrict the device's performance.…”