1995
DOI: 10.1016/0040-6090(94)06469-5
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High damage threshold dielectric coatings for excimer lasers

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Cited by 54 publications
(16 citation statements)
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“…Short pulse laser requirements are pushing the coating industry to develop coatings capable of withstanding picosecond and femtosecond pulses (Jasapara et al 2001). The needs of the lithography industry for short wavelength coatings neces-sitate the development of low-absorbing materials in the deep and extreme UV region (Apel et al 2000;Kaiser et al 1995). Finally telecommunication optics are being limited by laser damage issues as greater numbers of photons are injected into single fibers.…”
Section: Introductionmentioning
confidence: 99%
“…Short pulse laser requirements are pushing the coating industry to develop coatings capable of withstanding picosecond and femtosecond pulses (Jasapara et al 2001). The needs of the lithography industry for short wavelength coatings neces-sitate the development of low-absorbing materials in the deep and extreme UV region (Apel et al 2000;Kaiser et al 1995). Finally telecommunication optics are being limited by laser damage issues as greater numbers of photons are injected into single fibers.…”
Section: Introductionmentioning
confidence: 99%
“…There are plentiful optical coating components in UV laser systems. The laser damage resistance of these coatings is comparatively low and becomes one of the factors shortening the laser system lifetime [3,4].…”
Section: Introductionmentioning
confidence: 99%
“…The achieved film should have both smooth surfaces and a high dielectric constant. Amorphous SrBi 2 Nb 2 O 9 , as a good candidate, has a quite high dielectric constant (ε = 120) compared to thermally grown SiO 2 (ε = 3.9) and Al 2 O 3 (ε = 12) thin film can be easily fabricated at a low temperature even though other oxide candidates are also worthy of being considered [4][5][6][7]. In the present work, the electrical properties of amorphous SrBi 2 Nb 2 O 9 films on indium tin oxide (ITO) / polyethylene terephthalate (PET) have been studied to forecast their potentials as the gate dielectric layer for OTFT devices.…”
Section: Introductionmentioning
confidence: 99%