1999
DOI: 10.1109/20.800879
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High data rate recording at over 60 Mbytes per second

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Cited by 12 publications
(3 citation statements)
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“…Fujitsu and IBM reported 360 Mbit/s and 480 Mbit/s data rate capability, respectively, with conventional arm-electronics architecture [1], [2]. Here we report a data rate capability of 1000 Mbit/s achieved with our advanced write head architecture and dual synthetic spin-valve reader using conventional armelectronics architecture.…”
Section: Introductionmentioning
confidence: 58%
“…Fujitsu and IBM reported 360 Mbit/s and 480 Mbit/s data rate capability, respectively, with conventional arm-electronics architecture [1], [2]. Here we report a data rate capability of 1000 Mbit/s achieved with our advanced write head architecture and dual synthetic spin-valve reader using conventional armelectronics architecture.…”
Section: Introductionmentioning
confidence: 58%
“…We have developed a high-purity Co-Ni-Fe-film write head with a of 2.0 T [1], [2] that can write in a medium with an of 560 A/m (7000 Oe) [3]. Writing speed is also an important consideration for higher data rate [4]. The resistivity of high-purity Co-Ni-Fe is relatively low ( m) and the write performance of heads made of this material was good at 60 MHz [3].…”
Section: Introductionmentioning
confidence: 99%
“…Increasing linear density and faster access time drives rapid acceleration of data rate. Previous high data rate recording demonstrations have used experimental write drivers [1], [2]. In this paper, we will review the design, process, and performance of IBM's advanced write heads for high density and high data rate applications, using both product-level and experimental write drivers.…”
Section: Introductionmentioning
confidence: 99%