High-density 1.54 μm InAs/InGaAlAs/InP(100) based quantum dots with reduced size inhomogeneity

Banyoudeh, S.; Reithmaier, Johann Peter

doi:10.1016/j.jcrysgro.2015.03.027

Cited by 43 publications

(18 citation statements)

References 15 publications

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“…Here, the QD density is about 3×10 10 /cm 2 , a typical value for the InAs/InP QDs system. [22][23] It was also uncovered that a higher QD density can be achieved by stacking the InAs/InP QDs. 24 Moreover, more quantum dot stacks can facilitate the interaction of dislocations and the strain field of the QDs, enhancing the bending effect of propagated dislocations.…”

Section: Dislocation Filtering Analysismentioning

confidence: 99%

Epitaxial growth of high quality InP on Si substrates: The role of InAs/InP quantum dots as effective dislocation filters

Shi

Lau

2018

Journal of Applied Physics

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Monolithic integration of InP on a Si platform ideally facilitates on-chip light sources in silicon photonic applications. In addition to the well-developed hybrid bonding techniques, the direct epitaxy method is spawning as a more strategic and potentially cost-effective approach to monolithically integrate InP-based telecom lasers. To minimize the unwanted defects within the InP crystal, we explore multiple InAs/InP quantum dots as dislocation filters. The high quality InP buffer is thus obtained, and the dislocation filtering effects of the quantum dots are directly examined via both plan-view and cross-sectional transmission electron microscopy, along with room-temperature photoluminescence. The defect density on the InP surface was reduced to 3 × 108/cm2, providing an improved optical property of active photonic devices on Si substrates. This work offers a novel solution to advance large-scale integration of InP on Si, which is beneficial to silicon-based long-wavelength lasers in telecommunications.

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Section: Dislocation Filtering Analysismentioning

confidence: 99%

Epitaxial growth of high quality InP on Si substrates: The role of InAs/InP quantum dots as effective dislocation filters

Shi

Lau

2018

Journal of Applied Physics

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“…1 depicts an atomic force microscope image of a single QD layer as well as a high resolution transmission electron microscope cross section of the six layer structure. The QDs exhibit record uniformity characterized by the photoluminescence linewidth at 10 K which was 17 meV and 26 meV a single QD layer and for the six layer stack, respectively [31]. The emission power of the measured electro-luminescence spectra increases with applied bias but the spectral shape remains unchanged [32].…”

Section: Experimental Conditionsmentioning

confidence: 96%

Room Temperature Quantum Coherent Revival in an Ensemble of Artificial Atoms

Khanonkin,

Eyal,

Reithmaier

et al. 2020

Preprint

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We report a demonstration of the hallmark concept of quantum optics: periodic collapse and revival of quantum coherence (QCR) in a room temperature ensemble of quantum dots (QD). Control over quantum states, inherent to QCR, together with the dynamical QD properties present an opportunity for practical room temperature building blocks of quantum information processing. The amplitude decay of QCR is dictated by the QD homogeneous linewidth, thus, enabling its extraction in a double-pulse Ramsey-type experiment. The more common photon echo technique was also invoked and yielded the same linewidth. Measured electrical bias and temperature dependencies of the transverse relaxation times enable to determine the two main decoherence mechanisms: carrier-carrier and carrier-phonon scatterings.

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“…11 Similarly, it was reported that the growth condition of an InAlGaAs buffer layer can significantly affect the QD morphology and densities. 12,13 On the contrary, Stintz et al argued that the InAs nanostructure is largely determined by the number of InAs monolayers (MLs), independent from other factors such as buffer layer growth condition. 14 Another important growth parameter for InAs QD morphology is growth interruption (GI), which often allows QDs to reorganize through a ripening process before they are capped by a subsequent layer.…”

Section: Introductionmentioning

confidence: 99%

Effect of growth interruption in 1.55 μm InAs/InAlGaAs quantum dots on InP grown by molecular beam epitaxy

Jung

Ironside

Bank

et al. 2018

Journal of Applied Physics

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We report the effect of growth interruptions on the structural and optical properties of InAs/InAlGaAs/ InP quantum dots using molecular beam epitaxy. We find that the surface quantum dots experience an unintended ripening process during the sample cooling stage, which reshapes the uncapped InAs nanostructures. To prevent this, we performed a partial capping experiment to effectively inhibit structural reconfiguration of surface InAs nanostructures during the cooling stage, revealing that InAs nanostructures first form quantum dashes and then transform into quantum dots via a ripening process. Our result suggests that the appearance of buried InAs/InAlGaAs nanostructures can be easily misunderstood by surface analysis.

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High-density 1.54 μm InAs/InGaAlAs/InP(100) based quantum dots with reduced size inhomogeneity

Cited by 43 publications

References 15 publications

Epitaxial growth of high quality InP on Si substrates: The role of InAs/InP quantum dots as effective dislocation filters

Epitaxial growth of high quality InP on Si substrates: The role of InAs/InP quantum dots as effective dislocation filters

Room Temperature Quantum Coherent Revival in an Ensemble of Artificial Atoms

Effect of growth interruption in 1.55 μm InAs/InAlGaAs quantum dots on InP grown by molecular beam epitaxy

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