High-density interconnection using photosensitive polyimide and electroplated copper conductor lines

Chakravorty, K. K.; Chien, C.-P.; Cech, J.M.; Tanielian, M.; Young, Peter

doi:10.1109/33.52871

Cited by 19 publications

(3 citation statements)

References 14 publications

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“…A subtle issue in keeping the polymer intact arises from the lateral heat diffusion through the polymer that must be accounted for in the TIR measurements. We explain the experiment design process in this section for adhesively joined copper-Kapton junctions made from Dupont's double-side clad laminates [40] as a test case; however, it can also be extended to sputter-coated [45], electroplated [46], or welded [47], [48] metal-polymer junctions. The metal on either side of the laminate is patterned as four-point probes that act as heaters and temperature sensors.…”

Section: Experiments Designmentioning

confidence: 99%

“…The main modification is to employ an integrated heater and sensor. Here, we demonstrate the technique using proof-of-concept experiments to measure the intrinsic TIR of copper-Kapton junctions bonded using adhesives but the technique can be used on any metal-polymer junction ( ≫1 μm) made through techniques ranging from sputtering [45] to electroplating [46] to welding (laser [47], friction-stir [43], or ultrasonic [48]). Such metal-polymer junctions are used in emerging applications such as wearable electronics [1], [2], flexible solar cells [49], [50], Li-ion batteries [3], and hybrid heat exchangers [6].…”

Section: Introductionmentioning

confidence: 99%

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Intrinsic thermal interfacial resistance measurement in bonded metal–polymer foils

Rajagopal

Man

Agrawal

et al. 2020

Review of Scientific Instruments

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Heat conduction through bonded metal-polymer interfaces often limits the overall heat transfer in electronics packaging, batteries, and heat recovery systems. To design the thermal circuit in such systems, it is essential to measure the thermal interfacial resistance (TIR) across ~1-100 μm junctions. Previously reported TIR of metal-polymer junctions utilize ASTM E1530-based twoblock systems that measure the TIR by applying pressure across the interface through external heating and cooling blocks. Here, we report a novel modification of the ASTM-E1530 technique that employs integrated heaters and sensors to provide an intrinsic TIR measurement of an adhesively bonded metal-polymer junction. We design the measurement technique using finite element simulations to either passively suppress or actively compensate the lateral heat diffusion through the polymer, which can minimize the systematic error to ≲5%. Through proof-of-concept experiments, we report the TIR of metal-polymer interfaces made from DuPont's Pyralux doubleside copper-clad laminates, commonly used in flexible printed circuit boards. Our TIR measurement errors are <10%. We highlight additional sources of errors due to non-idealities in the experiment and discuss possible ways to overcome them. Our measurement technique is also applicable to interfaces that are electrically insulating such as adhesively-joined metal-metal junctions and sputter-coated or welded metal-polymer junctions. Overall, the technique is capable of measuring TIR ≳10 -5 m 2 KW -1 in bonded metal-polymer foils, and can be tailored for in situ measurements in flexible electronics, circuit packaging, and other hybrid metal-polymer systems.

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Section: Experiments Designmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Intrinsic thermal interfacial resistance measurement in bonded metal–polymer foils

Rajagopal

Man

Agrawal

et al. 2020

Review of Scientific Instruments

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“…1 Since 1970s, it has been used widely as an electrically insulating film or coating material in electronics area such as fabrication of transistors, liquid crystal display devices, printer parts, integrated circuits, printed circuit boards, encapsulants, and inter-layer dielectrics. [2][3][4][5][6][7] Because most polyimides are insoluble and intractable, thin polyimide film is prepared by the thermal imidization of soluble precursor, poly(amic acid) (PAA) after spin-coating on a substrate. In addition to this, lithographic process using a photoresist is required to produce a micro-patterned polyimide which is essential in semiconductor fabrication.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and Characterizations of Positive-Working Photosensitive Polyimides Having 4,5-Dimethoxy-o-Nitrobenzyl Side Group

Ryu¹,

Kim²,

Lee³

et al. 2008

Bulletin of the Korean Chemical Society

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To synthesize a new positive-working photosensitive polyimide, alkali-soluble polyimide containing carboxylic acid side group was synthesized, and parts of its carboxylic acid groups were esterified with 4,5-dimethoxy-2-nitrobenzyl bromide. The chemical structure of the resulting polymer was characterized by 1 H-NMR and FT-IR spectroscopies. The substitution ratio of photosensitive groups was estimated by 1 H-NMR integration values, and the thermal properties were examined by differential scanning calorimetry and thermogravimetric analyses. Upon UV irradiaition, 4,5-dimethoxy-2-nitrobenzyl moiety underwent the photodegradation with generation of carboxylic acid side groups as evidenced by UV/vis spectroscopy. As a result, the polymer became soluble in alkaline developer, and a micron-sized positive pattern was successfully fabricated from the synthesized polymer.

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Current Distribution and Shape Change in Electrodeposition of Thin Films for Microelectronic Fabrication

Dukovic

1993

Advances in Electrochemical Sciences and Engineering

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High-density interconnection using photosensitive polyimide and electroplated copper conductor lines

Cited by 19 publications

References 14 publications

Intrinsic thermal interfacial resistance measurement in bonded metal–polymer foils

Intrinsic thermal interfacial resistance measurement in bonded metal–polymer foils

Synthesis and Characterizations of Positive-Working Photosensitive Polyimides Having 4,5-Dimethoxy-o-Nitrobenzyl Side Group

Current Distribution and Shape Change in Electrodeposition of Thin Films for Microelectronic Fabrication

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