High density near amorphous InSb nanowire arrays and its photo-electric performance

Synthesis of Amorphous InSb Nanowires and a Study of the Effects of Laser Radiation and Thermal Annealing on Nanowire Crystallinity

“…The studies validate the increases in energy band gap of a - film from 0.17 eV up to 0.65 eV, and a significantly higher electrical resistivity. In terms of low-dimensional a - structures, there are reports on the fabrication of high density near amorphous NW arrays by electrodeposition method [ 23 ], where the amorphous nature of the NWs is attributed to three factors: (i) high concentration of the deposition solution, (ii) high concentration of the complexing agents, and (iii) high deposition voltage. Under these circumstances, the high concentration ions have no choice but to follow the lower energy site to deposit and grow.…”

Electrodeposition of Stoichiometric Indium Antimonide from Room‐Temperature Ionic Liquid 1‐Butyl‐1‐Methylpyrrolidinium Dicyanamide

“…[13] However,t he production of as toichiometricI nSb film by using thesem ethods presents major difficulties because of the differencesi nv apor pressure of In and Sb, and because the operation temperature must be in an arrow range. Electrodeposition is al ow-cost process compared with vacuum-based methodsm entioned above.S everals tudies on InSb electrodeposition from aqueous solution have been reported, [6,7,9,14] and the formation of an In 2 O 3 layer on the surface of the deposits [9] during the electrodeposition process is noted;m oreover, postheat treatment is required to increase the crystallinity of InSb. [6,14] Surprisingly,o nly limited work relatedt oe lectrodeposition of InSb has been performed in ionic liquids.…”

“…Indium antimonide (InSb), as a direct band gap semiconductor, is well known for its narrow band gap (0.16 eV at 300 K), high mobility of charge carriers, and effective n‐type or p‐type semiconductor properties at room temperature . From a material science prospective, InSb is a promising candidate for application in high‐speed and low‐power nanoelectronic devices, infrared detectors, NO 2 sensors, and thermoelectric generators . Various methods are used for the growth of InSb films, such as pulsed laser deposition, chemical vapor deposition, molecular beam exitaxy, and vacuum evaporation .…”

“…Electrodeposition is a low‐cost process compared with vacuum‐based methods mentioned above. Several studies on InSb electrodeposition from aqueous solution have been reported, and the formation of an In 2 O 3 layer on the surface of the deposits during the electrodeposition process is noted; moreover, post‐heat treatment is required to increase the crystallinity of InSb . Surprisingly, only limited work related to electrodeposition of InSb has been performed in ionic liquids.…”

LiTaO3 microcubes: the layered structure and the increased Curie temperature

“…For a FPA, increasing the pixel density (by reduction of the size of single unit) is an important way to enhance the resolution and recognition ability. [21][22][23][24][25][26] But the pixel unit of the most used uncooled pyroelectric FPA is usually more than ten micrometers. Therefore, the investigation of the LiTaO 3 material in micro/nano scale is of great value.…”