High-Density Three-Dimensional Stacked nand Flash With Common Gate Structure and Shield Layer

Jeong, Min-Kyu; Joe, Sung-Min; Shin, Hyungcheol; Park, Byung‐Gook; Lee, Jong-Ho

doi:10.1109/ted.2011.2168229

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Cited by 4 publications

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“…T O FULFILL the demand of extremely high storage capacity and reduce bit cost, a 3-D technology using a vertical bitline (BL) string is one of the most promising solutions [1]- [3]. However, a 3-D NAND flash memory suffers from the traps of grain boundary in the polycrystalline silicon (poly-Si) body [4]- [6], which induces the degradation of the mobility and the subthreshold swing (SS).…”

Section: Introductionmentioning

confidence: 99%

Diode-Type NAND Flash Memory Cell String Having Super-Steep Switching Slope Based on Positive Feedback

Joe

Kang

Choi

et al. 2016

IEEE Trans. Electron Devices

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A positive feedback (PF) mechanism was adopted for the first time in the cell string of a 3-D NAND flash memory where n + and p + regions are formed on both ends of the string to implement a diode-type cell string. The body consists of a tubetype poly-Si channel. To generate the PF in the channel during a read operation, a new read operation scheme is proposed. In this paper, the simulator was calibrated in terms of trap density ( D it ) of a poly-Si channel extracted from fabricated 3-D NAND flash memory cells. By utilizing the PF, a NAND flash memory cell in a cell string has a steep subthreshold swing of <1 mV/decade.

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