High doping performance of lattice matched GaInP on GaAs

Scheffer, F.; Buchali, Fred; Lindner, Andreas; Liu, Q.; Wiersch, A.; Prost, W.

doi:10.1016/0022-0248(92)90503-b

Cited by 13 publications

(5 citation statements)

References 12 publications

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“…In our laboratory, Si‐doped InGaP layers were grown on (100) GaAs substrates with growth parameters matching those of n‐InGaP NW shells (details in experimental section ), exhibiting a Hall mobility of 739 cm 2 V −1 s −1 at N D ≈ 4 · 10 18 cm −3 . These values correspond well with the previously published data for MOVPE‐grown n‐doped InGaP layers . A fit function through all data points is extracted to include the doping‐dependent mobilities to be used in our NW resistance model (see Figure S1 and Equation S3, Supporting Information).…”

Section: Resultssupporting

confidence: 81%

n‐Doped InGaP Nanowire Shells in GaAs/InGaP Core–Shell p–n Junctions

Liborius

Bieniek

Nägelein

et al. 2019

Physica Status Solidi (b)

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Herein, the characterization of n‐doped InGaP:Si shells in coaxial not‐intentionally doped (nid)‐GaAs/n‐InGaP as well as n–p–n core–multishell nanowires grown by metalorganic vapor‐phase epitaxy is reported. The multi‐tip scanning tunneling microscopy technique is used for contact‐independent resistance profiling along the tapered nid‐GaAs/n‐InGaP core–shell nanowires to estimate the established emitter shell doping concentration to ND ≈ 3 · 1018 cm−3. Contacts on these shells are demonstrated and exhibit ohmic current–voltage characteristics after annealing. Application potential is demonstrated by the growth and processing of coaxial p‐GaAs/n‐InGaP junctions in n–p–n core–multishell nanowires, with n‐InGaP being the electron‐supplying emitter material. Current–voltage characteristics and temperature‐dependent electroluminescence measurements substantiate successful doping of the n‐InGaP shell. A tunneling‐assisted contribution to the leakage currents of the investigated p–n junctions is verified by the sub‐bandgap luminescence at low temperatures and is attributed to radiative tunneling processes.

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Section: Resultssupporting

confidence: 81%

n‐Doped InGaP Nanowire Shells in GaAs/InGaP Core–Shell p–n Junctions

Liborius

Bieniek

Nägelein

et al. 2019

Physica Status Solidi (b)

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“…A conduction band discontinuity of

Δ E_{normalC}

= 100 meV [ 35 ] and an emitter background doping of 5 × 10 15 cm −3 are assumed. [ 33 ] The SCR mostly extends into the InGaP due to the different doping of base and emitter. The total SCR width increases from

d_{scr,I}

≈ 51 nm in sample I to

d_{scr,II}

≈ 58 nm and

d_{scr,III}

≈ 68 nm for samples II and III.…”

Section: Resultsmentioning

confidence: 99%

“…[ 28,29 ] The n‐type background doping of the nid‐InGaP is assumed as ≤5 × 10 15 cm −3 , derived from planar nid‐InGaP layers. [ 33 ]…”

Section: Growth and Processingmentioning

confidence: 99%

Tunneling‐Related Leakage Currents in Coaxial GaAs/InGaP Nanowire Heterojunction Bipolar Transistors

Liborius

Bieniek

Possberg

et al. 2020

Physica Status Solidi (b)

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Herein, a detailed analysis of leakage mechanisms in epitaxially grown nanowire heterojunction bipolar transistors (NW‐HBTs) is presented. Coaxial npn‐GaAs/InGaP core–multishell nanowires are grown via gold‐catalyzed metalorganic vapor phase epitaxy, processed to three terminal devices and electrically characterized. The key for successful NW‐HBT device functionality is the identification of tunneling as the dominant leakage mechanism in highly doped nanowire pn‐junctions. The suppression of forward tunneling currents by adjustment of the tunneling barrier width reduces the junction leakage current density into the nA cm−2 regime, which is further verified by tunneling‐related electroluminescence measurements. In addition, the suppressed tunneling accordingly increases the number of electrons that are injected from the n‐emitter into the p‐base. The latter effect influences the performance of pn‐junction based devices and is found to enable bipolar transistor functionality. Measured common emitter Gummel plots of the NW‐HBT exhibit a current gain of up to 9 and the transistor function is additionally verified by current‐controlled output characteristics.

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“…Each Sub-cell is composed of a Ga 0.5 In 0.5 P window layer, a GaAs emitter and base, and an Al 0.8 Ga 0.2 As back surface field (BSF) layer. The parameters of Ga 0.5 In 0.5 P, GaAs, and Al 0.8 Ga 0.2 As materials are listed in Table 1 [25][26][27][28][29][30][31][32][33]. The effect of temperature on the material parameters was considered by using temperaturedependent physical models.…”

Section: Simulation Methodsmentioning

confidence: 99%

“…Material parameters (energy gap, carrier mobilities, radiative recombination rates and capture cross-sections) used in simulation[25][26][27][28][29][30][31][32][33].…”

mentioning

confidence: 99%

A noval method of determining bias lights for spectral response measurement of GaAs multi-junction laser power converters and its applications

Sun

Shi

Liu

et al. 2023

Preprint

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Quantitative electrical analysis of sub-cells is crucial for the designing of high-efficiency GaAs multi-junction laser power converters (MJLPCs). Spectral response (SR) measurement is the main mean of characterizing the electrical performance of sub-cell. However, all the sub-cells in GaAs MJLPCs have the same SR range, resulting that finding suitable bias lights to make the sub-cells current-limited is difficult for the SR measurement of GaAs MJLPCs. Here, we report a method of determining bias lights for the SR measurement of GaAs MJLPCs based on the variation rules of simulated short-circuit current densities with wavelengths in the sub-cells of GaAs MJLPCs. The method of determining bias lights is applicable to a variety of GaAs MJLPCs, including in original state, at high temperature or after high-energy particles irradiation. With the method of determining bias lights, the measured external quantum efficiency (EQE) curves of the 1st cell, the 2nd cell and the 3rd cell in a GaAs triple-junction LPC were successfully obtained. The work is anticipated to provide guidelines for further developments of high-efficiency and high-reliability III-V MJLPCs.

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High doping performance of lattice matched GaInP on GaAs

Cited by 13 publications

References 12 publications

n‐Doped InGaP Nanowire Shells in GaAs/InGaP Core–Shell p–n Junctions

n‐Doped InGaP Nanowire Shells in GaAs/InGaP Core–Shell p–n Junctions

Tunneling‐Related Leakage Currents in Coaxial GaAs/InGaP Nanowire Heterojunction Bipolar Transistors

A noval method of determining bias lights for spectral response measurement of GaAs multi-junction laser power converters and its applications

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