High-Dose Implantation

Beanland, D.G.

doi:10.1016/b978-0-12-756980-2.50012-6

Cited by 6 publications

(2 citation statements)

References 54 publications

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“…Freeman et al (1975) showed that the colour bands resulted from temperature variations produced across the wafer during implantation. Visible interference colours may be generated when there is either a surface layer of crystalline silicon above amorphous silicon or amorphous silicon above crystalline silicon, and the interface between these layers is sharp (Beanland 1977). The different colours arise from differences in the relative thicknesses of these amorphous-crystalline layers (Csepregi et a1 1976, Seidel el a1 1976).…”

Section: Structural Changesmentioning

confidence: 99%

“…The different colours arise from differences in the relative thicknesses of these amorphous-crystalline layers (Csepregi et a1 1976, Seidel el a1 1976). Furthermore, the amorphous-crystalline layer thicknesses are very sensitive to the wafer temperature during implantation and changes of a few degrees (at average wafer temperatures of 100 "C or more, depending on the implanted species) can change a surface layer from totally amorphous to totally crystalline (Beanland 1977). the observed colour bands and their widths across a 5 cm diameter (1 11) silicon wafer uniformly scanned with a 500 PA, 40 keV phosphorus beam to a total dose of 2 x 1016cm-2.…”

Section: Structural Changesmentioning

confidence: 99%

See 1 more Smart Citation

Materials modification with ion beams

Williams¹

1986

Rep. Prog. Phys.

134

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The incorporation of impurities into solids by bombardment with energetic ions is a non-equilibrium process which can result in intriguing near-surface property changes. This review initially examines the basic ion-solid interaction processes and outlines how such processes can lead to the modification of the composition, structure and surface topography of materials. Ion implantation has been exploited in widely diverse fields both as a powerful research tool for investigating solid state material processes and properties, and as a means of controllably modifying the electrical, physical, chemical, mechanical and optical properties of solid surfaces. These aspects receive major attention in this review which attempts to provide a balanced overview of the impact of ion implantation on solid state science and technology. In particular, special emphasis is given to implantation processes and applications in semiconductors which have received an enormous amount of attention in recent years, stimulated no doubt by the strong technological driving forces within the microelectronics industry. Ion bombardment processes and interesting property changes in metals are also discussed, and a selection of important technological applications is given. Finally, an overview of more recent investigations and applications is presented, including ion implantation into insulators and polymers, insight into crystal growth processes, adhesion of thin films to substrates, and research into ion bombardment of ices which has astrophysical significance.

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Section: Structural Changesmentioning

confidence: 99%

Section: Structural Changesmentioning

confidence: 99%