High dose MeV oxygen ion implantation into SiC

Wesch, W.; Heft, Andreas; Hobert, H.; Peiter, G.; Wendler, E.; Bachmann, T.

doi:10.1016/s0168-583x(98)00184-0

Cited by 18 publications

(12 citation statements)

References 8 publications

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“…3(b)) for damaged layers B 1 and B 3 reveal the appearance of the p Ã transition at 286 eV, in addition to the r Ã transition at 293 eV. Barradas et al [4] and Wesch et al [5] have examined the oxygen ion implanted SiC using RBS and optical transmission and re¯ection measurements, respectively, and reported evidence of self-bonded carbon in the buried oxide layer and excess carbon atoms ejected to both sides of the buried oxide layer. Our present study clearly shows evidence for sp 2 bonding in regions surrounding the buried oxide layer, and so is consistent with these results.…”

Section: Resultsmentioning

confidence: 90%

“…Some researchers performed oxygen ion implantation into SiC to synthesize a buried oxide layer, and analyzed the samples using Rutherford backscattering spectroscopy (RBS) [4,5], X-ray photoelectron spectroscopy (XPS) [4], and optical Nuclear Instruments and Methods in Physics Research B 166±167 (2000) 390±394 www.elsevier.nl/locate/nimb transmission and re¯ection measurements [5]. As a result, it has been suggested that the oxygen implantation into SiC is a possible way to develop SiC-on-insulator structures.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Ion beam synthesis of buried oxide layers in silicon carbide

Ishimaru¹,

Dickerson²,

Sickafus³

2000

Nuclear Instruments and Methods in Physics Research Section B:

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A ®eld emission gun scanning transmission electron microscope equipped with an energy-dispersive X-ray spectrometer (EDX) and an electron energy loss spectrometer (EELS) has been used to characterize the microstructures, elemental distributions, and chemical bonding states of oxygen ion implanted silicon carbide (SiC). 6H±SiC substrates with the (0 0 0 1) orientation were implanted with 180 keV oxygen ions at 650°C to¯uences of 0X7 Â 10 18 and 1X4 Â 10 18 cm À2 . A continuous amorphous layer is formed in the as-implanted state under these irradiation conditions. The amorphous layer is uniform in the low-dose sample, while it consists of three layers in the high-dose one. EDX maps of elemental distributions suggest that the layered structure in the latter sample originates from compositional¯uctuations of silicon, carbon and oxygen. EELS measurements suggest that the amorphous regions in the high-dose sample consist of well-de®ned SiO 2 layer which is accompanied by sp 2 -bonded carbon. Ó

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Section: Resultsmentioning

confidence: 90%

Section: Introductionmentioning

confidence: 99%

Ion beam synthesis of buried oxide layers in silicon carbide

Ishimaru¹,

Dickerson²,

Sickafus³

2000

Nuclear Instruments and Methods in Physics Research Section B:

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“…In addition, the formation of BOX layers can be used as a lower cladding layer for optical waveguides. [3][4][5][6] Oxygen implantation into semiconductors is therefore of technological importance to develop advanced materials for micro-and optoelectronics. In fact, SOI structures have already been developed for Si using oxygen ion implantation.…”

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confidence: 99%

Dose dependence of microstructural evolution in oxygen-ion-implanted silicon carbide

Ishimaru

Sickafus

1999

Applied Physics Letters

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Transmission electron microscopy (TEM) and Rutherford backscattering spectroscopy and ion channeling (RBS/C) have been used to characterize the microstructures and damage distributions in oxygen-ion-implanted silicon carbide (SiC). 6H–SiC single crystals with [0001] orientation were irradiated with 180 keV O+ ions at 650 °C to fluences ranging from 0.2×1018 to 1.4×1018/cm2. No continuous buried amorphous layer was formed in the specimen with 0.2×1018 O+/cm2, although there were striated regions consisting of amorphous and crystalline structures at depth between 200 and 300 nm. A continuous buried amorphous layer appeared above 0.4×1018 O+/cm2, and the amorphous regions grew in size with increasing fluence. TEM and RBS/C results indicated that microstructures and elemental distributions change drastically between 0.7×1018 and 1.4×1018 O+/cm2.

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“…This bond length is close to the first nearest neighbor distance of graphite (0.143 nm), suggesting the existence of selfbonded carbon atoms in SiO 2 layer. Barradas et al 9 and Wesch et al 11 have examined oxygen ion-implanted SiC using RBS and optical transmission and reflection measurements, respectively; they re- ported that the buried oxide layer is accompanied by an admixture of self-bonded carbon and that excess carbon atoms are expelled on both sides of the buried oxide layer. Also, electron energy-loss spectroscopy measurements have suggested the formation of a well-defined SiO 2 layer including selfbonded carbon atoms in oxygen ion-implanted SiC.…”

Section: Resultsmentioning

confidence: 99%

Amorphous structures of buried oxide in SiC-on-insulator

Ishimaru

2001

Journal of Elec Materi

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A buried amorphous layer in high-dose oxygen ion-implanted silicon carbide (SiC) has been characterized by transmission electron microscopy (TEM), Rutherford backscattering spectroscopy (RBS), and energy dispersive x-ray spectroscopy. Single crystalline (0001)-oriented 6H-SiC wafers were irradiated with 180 keV oxygen ions at 650°C to a fluence of 1.4 ϫ 10 18 /cm 2 . A fully amorphous SiO 2 layer was formed inside the irradiated crystal, while the surrounded 6H-SiC exhibited minimal damage. This SiO 2 layer included selfbonded carbon atoms and showed a layered structure due to compositional variations of silicon, carbon, and oxygen.

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High dose MeV oxygen ion implantation into SiC

Cited by 18 publications

References 8 publications

Ion beam synthesis of buried oxide layers in silicon carbide

Ion beam synthesis of buried oxide layers in silicon carbide

Dose dependence of microstructural evolution in oxygen-ion-implanted silicon carbide

Amorphous structures of buried oxide in SiC-on-insulator

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