Amorphous structures of buried oxide in SiC-on-insulator

Abstract

A buried amorphous layer in high-dose oxygen ion-implanted silicon carbide (SiC) has been characterized by transmission electron microscopy (TEM), Rutherford backscattering spectroscopy (RBS), and energy dispersive x-ray spectroscopy. Single crystalline (0001)-oriented 6H-SiC wafers were irradiated with 180 keV oxygen ions at 650°C to a fluence of 1.4 ϫ 10 18 /cm 2 . A fully amorphous SiO 2 layer was formed inside the irradiated crystal, while the surrounded 6H-SiC exhibited minimal damage. This SiO 2 layer included selfbonded carbon atoms and showed a layered structure due to compositional variations of silicon, carbon, and oxygen.

A novel 4H–SiC SOI-MESFET with a modified breakdown voltage mechanism for improving the electrical performance

“…Although to date the SiC-SOI wafer cannot be realized commercially, there are major efforts to produce SiC-SOI wafers [18,19] for utilizing good features of SOI technology in SiC devices. In the direction in which technology progresses, we have combined all good features of SiC material such as high electric field, high saturation velocity and high thermal conductivity with good features of SOI technology, because the ultimate purpose of physics-based simulations such as TCAD is to reduce the time consumption and the number of expensive clean-room experiments.…”