High Dynamic Range Organic Temperature Sensor

Ren, Xiaochen; Chan, Paddy K. L.; Lu, Jianbiao; Huang, Baoling; Leung, Chi Wah

doi:10.1002/adma.201204396

Cited by 70 publications

(55 citation statements)

References 25 publications

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“…Compared to the single-OFET integrated temperature sensor we demonstrated previously, [ 25 ] the 16 × 16 activematrix temperature sensor array can achieve a low operating voltage of 4 V and a 100% yield rate (see Experimental Section for details of fabrication steps). The average mobility of the dinaphtho [2,3-…”

Section: Communicationmentioning

confidence: 95%

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A Low‐Operating‐Power and Flexible Active‐Matrix Organic‐Transistor Temperature‐Sensor Array

et al. 2016

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An organic flexible temperature-sensor array exhibits great potential in health monitoring and other biomedical applications. The actively addressed 16 × 16 temperature sensor array reaches 100% yield rate and provides 2D temperature information of the objects placed in contact, even if the object has an irregular shape. The current device allows defect predictions of electronic devices, remote sensing of harsh environments, and e-skin applications.

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Section: Communicationmentioning

confidence: 95%

“…and can be expressed in Arrhenius form with a particular activation energy [ 25 ] ( E act ) as shown in the following equation:…”

Section: Communicationmentioning

confidence: 99%

A Low‐Operating‐Power and Flexible Active‐Matrix Organic‐Transistor Temperature‐Sensor Array

et al. 2016

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“…Moreover, thermistors based on oxide materials are generally fabricated on a rigid substrate, making them vulnerable to damage. Therefore, to enlarge the application fi elds of thermistors in e-skin, biomedical thermal imaging, and health monitoring, fl exible and stretchable thermistors based on organic semiconductors, [ 82 ] nanocomposites, [ 26,51,[66][67][68][69] and graphene (Gr), [ 70 ] have been developed.…”

Section: Thermistorsmentioning

confidence: 99%

Flexible and Stretchable Physical Sensor Integrated Platforms for Wearable Human‐Activity Monitoringand Personal Healthcare

2016

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Flexible and stretchable physical sensors that can measure and quantify electrical signals generated by human activities are attracting a great deal of attention as they have unique characteristics, such as ultrathinness, low modulus, light weight, high flexibility, and stretchability. These flexible and stretchable physical sensors conformally attached on the surface of organs or skin can provide a new opportunity for human-activity monitoring and personal healthcare. Consequently, in recent years there has been considerable research effort devoted to the development of flexible and stretchable physical sensors to fulfill the requirements of future technology, and much progress has been achieved. Here, the most recent developments of flexible and stretchable physical sensors are described, including temperature, pressure, and strain sensors, and flexible and stretchable sensor-integrated platforms. The latest successful examples of flexible and stretchable physical sensors for the detection of temperature, pressure, and strain, as well as their novel structures, technological innovations, and challenges, are reviewed first. In the next section, recent progress regarding sensor-integrated wearable platforms is overviewed in detail. Some of the latest achievements regarding self-powered sensor-integrated wearable platform technologies are also reviewed. Further research direction and challenges are also proposed to develop a fully sensor-integrated wearable platform for monitoring human activity and personal healthcare in the near future.

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“…Different high dielectric constant (high-k ) gate materials, including polymers, inorganic oxides and hybrid stacks thin fi lms with self-assembly monolayers (SAMs) have been proven to reduce the operating voltage of the OFETs. Relatively high annealing temperatures of the commonly used high-k polymer materials, such as poly(vinylidenefl uoride-co-trifl uoroethylene) (P(VDF-TrFE)) (160 °C)-polyvinyl phenol (PVP) (175°C), [ 6 ] PVPy (100 °C) [ 7 ] and PVP mixed with poly (melamine-coformaldehyde) methylated (200 °C) [ 8 ] would limit their applications on paper-based or low glass transition temperature fl exible substrates. [ 6,8 ] Furthermore, as the areal capacitance and surface morphology of the polymers dielectric are usually sensitive to moisture content, [ 7 ] this limits their applications in biological systems such as human skin.…”

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confidence: 99%

“…Relatively high annealing temperatures of the commonly used high-k polymer materials, such as poly(vinylidenefl uoride-co-trifl uoroethylene) (P(VDF-TrFE)) (160 °C)-polyvinyl phenol (PVP) (175°C), [ 6 ] PVPy (100 °C) [ 7 ] and PVP mixed with poly (melamine-coformaldehyde) methylated (200 °C) [ 8 ] would limit their applications on paper-based or low glass transition temperature fl exible substrates. [ 6,8 ] Furthermore, as the areal capacitance and surface morphology of the polymers dielectric are usually sensitive to moisture content, [ 7 ] this limits their applications in biological systems such as human skin. [ 9 ] Similar to the polymer materials, vacuum or relatively high temperature is usually needed during the fabrication and solidifi cation process for inorganic high-k materials such as Ba 1.2 Ti 0.8 O 3 by sol-gel process annealed at 180 °C [ 10 ] and hafnium oxide (HfO x ) derived from atomic layer deposition at 200 °C [ 11 ] or by sol gel process at 600 °C.…”

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confidence: 99%

Low Cost Universal High‐k Dielectric for Solution Processing and Thermal Evaporation Organic Transistors

Wang

Ren

Fan

et al. 2014

Adv Materials Inter

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SAM is needed to reduce the leakage current through the gate and dielectric. Some of the SAMs would require relatively long preparation time [12][13][14] and usually the functional head groups of SAMs is dielectric specifi c. It is challenging to develop a universal SAMs suitable for different dielectric insulators. More importantly, the SAM also modifi es the surface energy of the dielectric and affects the crystallinity of the organic semiconductors. It is necessary to employ a suitable SAM to achieve high crystallility and carrier mobility in the OFETs. [ 14 ] To date, it is still a great challenge in the research fi eld to develop a universal high-k material which does not require SAM, and can be processed at moderate temperature, ambient air environment, and adjustable surface energy for both thermal evaporation and solution processing of organic semiconductors.To address these challenges, we recently reported a high-k (ε r = 11) barium strontium titanate (BST) thin fi lm treated by UV-Ozone and deposited by multi-layer spin coating deposition. [ 15 ] The high-k fi lms are spin coated in ambient air and heated to a temperature of around 85 °C during the UV-Ozone process. The UV emits at 184.9 nm and 253.7 nm under ambient air conditions converting oxygen into reactive O species, which then diffuse into the amorphous BST thin fi lm and reacts with the oxygen vacancies to form lattice oxygen. The reactive oxygen also removes the organic impurities in the fi lm, which results in a high quality amorphous BST thin fi lm with better stoichiometry. [ 16 ] The compatibility with ambient air environment, low processing temperature, and no SAM requirement suggest the BST dielectric has extremely high potentials to be applied in developing low cost OFETs on plastic fl exible substrates and have advantages over other polymers and inorganic materials. In the current study, we investigate the surface energy modifi cation effect by varying the storage environment and time of the BST thin fi lm in order to achieve a universal high-k material for OFET fabrications without using SAM. Based on the contact angle measurements, we calculated the surface energy and the wetting envelope of the BST high-k dielectric stored under different fi ve different conditions. The fresh BST with hydrophilic surface is suitable for spin coating or drop casting of organic semiconductor deposition where surface wetting is needed for the alignment of organic molecules. On the other hand, the BST thin fi lms stored under different conditions show different surface energy, which will directly affect the crystallinity of the organic semiconductors. On the current BST high-k dielectric without SAM and further optimization, dinaphtho[2,3-b:2′,3′-f ] thieno[3,2-b] thiophene (DNTT) and 6,13-Bis (triisopropylsilylethynyl) pentacene (TIPS-pentacene) organic transistors with average mobility of 1.51 cm 2 V −1 s −1 and 0.11 cm 2 V −1 s −1 are formed by thermal evaporation and droplet-pinned crystallization (DPC) method (one of the solution processing methods...

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High Dynamic Range Organic Temperature Sensor

Cited by 70 publications

References 25 publications

A Low‐Operating‐Power and Flexible Active‐Matrix Organic‐Transistor Temperature‐Sensor Array

A Low‐Operating‐Power and Flexible Active‐Matrix Organic‐Transistor Temperature‐Sensor Array

Flexible and Stretchable Physical Sensor Integrated Platforms for Wearable Human‐Activity Monitoringand Personal Healthcare

Low Cost Universal High‐k Dielectric for Solution Processing and Thermal Evaporation Organic Transistors

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