High-efficiency back-junction silicon solar cell with an in-line evaporated aluminum front grid

Kessler, M.; Münster, Daniel; Neubert, T.; Mader, Christoph; Schmidt, Jan; Brendel, Rolf

doi:10.1109/pvsc.2011.6186141

Cited by 12 publications

(5 citation statements)

References 12 publications

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“…In order to permit a 3T operation of the bottom cell, we apply a passivating but conducting n + POLO base contact to the front side of the cell. For measurement purposes, we deposit an aluminum front side grid with a finger distance of 1778 μm and a finger width of 240 μm through a shadow mask on top of the n + POLO front contact. The rear side is finished according to the study of Rienäcker et al …”

Section: Methodsmentioning

confidence: 99%

Back‐contacted bottom cells with three terminals: Maximizing power extraction from current‐mismatched tandem cells

Rienäcker

Warren

Schnabel

et al. 2019

Progress in Photovoltaics

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Multi‐junction cells can significantly improve the energy yield of photovoltaic systems over a single‐junction cell. The internal interconnection scheme of the subcells is an important aspect in determining the resulting levelized cost of electricity. For a dual‐junction cell, two approaches are commonly discussed: series‐connected tandem cells with two terminals or independently working subcells in a four‐terminal (4T) tandem device. In this paper, we explore the working principle and the operation modes of a third, rarely discussed option: a three‐terminal (3T) tandem cell using a back‐contacted bottom cell with 3Ts. We use current–voltage measurements of illuminated 3T interdigitated back contact cells and confirm that the front and rear base contacts are at similar quasi‐Fermi level positions, which enables the bottom cell to either efficiently collect surplus carriers, in the case of a current‐limiting or carrier injecting top cell, or inject majority carriers, in the case of a current‐limiting bottom cell. As a result, no current matching is needed. The power output of an idealized 3T bottom cell without resistive effects is independent of the current density applied from the top cell. These characteristics of the 3T bottom cells enable a 3T tandem to operate as efficiently as a 4T tandem, while being compatible with monolithic design and not requiring intermediate grids. We propose a simple equivalent circuit model including additional resistive effects, which describes a real 3T bottom cell and achieves excellent agreement to the experiment. We deduce design guidelines for a 3T bottom cell in different operation regimes.

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Section: Methodsmentioning

confidence: 99%

Back‐contacted bottom cells with three terminals: Maximizing power extraction from current‐mismatched tandem cells

Rienäcker

Warren

Schnabel

et al. 2019

Progress in Photovoltaics

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“…It should be noted that the processes of high-concentration phosphorus diffusion have attracted close attention recent because of their use for the creation of doped regions in solar cells based on crystalline silicon [23][24][25] and for gettering of undesirable iron-type impurities [26,27]. In this connection, it makes sense to apply the model developed to the investigation of recent experimental data on high-concentration phosphorus diffusion in manufacturing solar cells.…”

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confidence: 99%

Modeling high-concentration phosphorus diffusion in crystalline silicon

Velichko

Aksenov

Anufriev

et al. 2013

J Eng Phys Thermophy

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Phosphorus diffusion in crystalline silicon in doping from a surface source at a temperature of 840 o C and a duration of 10 min has been modeled. Good agreement with experimental data has been obtained, which confi rms the adequacy of the employed model of high-concentration phosphorus diffusion. This model takes account of the drift of self-interstitials in the fi eld of internal elastic stresses.

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“…1 In contrast, Al is not a deep level impurity in Si and can be placed in direct contact with the Si cell without the need for a barrier layer. 14 Oxidation of Al forms a dense layer of Al 2 O 3 on the outer most surface of Al, preventing further oxidation from the atmosphere. A capping layer is needed to add solderability for Cu tabbing wires onto the Al electrode (Fig.…”

Section: Resultsmentioning

confidence: 99%

Light-Induced Al Plating on Si for Fabrication of an Ag-Free All-Al Solar Cell

Ricci

Tseng

Tao

et al. 2021

ECS J. Solid State Sci. Technol.

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Light-induced electroplating of Al as the front electrode on the n-type emitter of Si solar cells is proposed as a substitute for screen-printed Ag. The advantages and disadvantages of Al over Cu as the front electrode are discussed. The power of a green laser used for patterning of the SiNx antireflection coating is optimized. Conditions for removal of laser damage and contamination on the laser-patterned surface are identified. The effect of plating temperature and post-annealing temperature on Al morphology and resistivity are investigated. Several plating additives are explored to improve the morphology and resistivity of the Al film. Nicotinic acid produces the lowest resistivity of 3.1 μΩ-cm. However, the lowest contact resistivity between light-induced Al and Si is 69 mΩ-cm2 due to laser-induced damage to the emitter. The Al film spikes through the thin n-type emitter when annealed at 500 °C causing cell failure. The process reproducibility is also poor due to atmospheric moisture.

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High-efficiency back-junction silicon solar cell with an in-line evaporated aluminum front grid

Cited by 12 publications

References 12 publications

Back‐contacted bottom cells with three terminals: Maximizing power extraction from current‐mismatched tandem cells

Back‐contacted bottom cells with three terminals: Maximizing power extraction from current‐mismatched tandem cells

Modeling high-concentration phosphorus diffusion in crystalline silicon

Light-Induced Al Plating on Si for Fabrication of an Ag-Free All-Al Solar Cell

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