“…Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells Yuji Zhao, 1,a) Qimin Yan, 2 Chia-Yen Huang, 2 Shih-Chieh Huang, 2 Po Shan Hsu, 2 Shinichi Tanaka, 2 Chih-Chien Pan, 2 Yoshinobu Kawaguchi, 2 Kenji Fujito, 3 Chris G. Van de Walle, 2 James S. Speck, 2 Steven P. DenBaars, 1,2 Shuji Nakamura, 1,2 and Daniel Feezell 2 1 Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106, USA We report indium incorporation properties on various nonpolar and semipolar free-standing GaN substrates. Electroluminescence characterization and x-ray diffraction (XRD) analysis indicate that the semipolar ð20 2 1Þ and ð11 22Þ planes have the highest indium incorporation rate among the studied planes.…”