2010
DOI: 10.1143/apex.3.112101
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High-Efficiency Blue and True-Green-Emitting Laser Diodes Based on Non-c-Plane Oriented GaN Substrates

Abstract: Using non-c-plane bulk GaN substrates, we demonstrate continuous-wave single-mode blue-emitting laser diodes operating with over 23% wall plug efficiency and over 750 mW output power, which represent the highest values reported to date. Furthermore, we demonstrate continuous-wave 520 nm green-emitting laser diodes with over 60 mW output power and 1.9% wall plug efficiency. The rapid performance evolution of laser diodes fabricated on non-c-plane orientations is validation of the benefits resulting from increas… Show more

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Cited by 79 publications
(40 citation statements)
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“…Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells Yuji Zhao, 1,a) Qimin Yan, 2 Chia-Yen Huang, 2 Shih-Chieh Huang, 2 Po Shan Hsu, 2 Shinichi Tanaka, 2 Chih-Chien Pan, 2 Yoshinobu Kawaguchi, 2 Kenji Fujito, 3 Chris G. Van de Walle, 2 James S. Speck, 2 Steven P. DenBaars, 1,2 Shuji Nakamura, 1,2 and Daniel Feezell 2 1 Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106, USA We report indium incorporation properties on various nonpolar and semipolar free-standing GaN substrates. Electroluminescence characterization and x-ray diffraction (XRD) analysis indicate that the semipolar ð20 2 1Þ and ð11 22Þ planes have the highest indium incorporation rate among the studied planes.…”
mentioning
confidence: 99%
“…Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells Yuji Zhao, 1,a) Qimin Yan, 2 Chia-Yen Huang, 2 Shih-Chieh Huang, 2 Po Shan Hsu, 2 Shinichi Tanaka, 2 Chih-Chien Pan, 2 Yoshinobu Kawaguchi, 2 Kenji Fujito, 3 Chris G. Van de Walle, 2 James S. Speck, 2 Steven P. DenBaars, 1,2 Shuji Nakamura, 1,2 and Daniel Feezell 2 1 Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106, USA We report indium incorporation properties on various nonpolar and semipolar free-standing GaN substrates. Electroluminescence characterization and x-ray diffraction (XRD) analysis indicate that the semipolar ð20 2 1Þ and ð11 22Þ planes have the highest indium incorporation rate among the studied planes.…”
mentioning
confidence: 99%
“…Unfortunately, the performance of such InGaN based laser diodes, emitting more than 60 mW [3], is so far limited by the material properties of the lasers. Other promising candidates for generating green light are diode pumped Pr 3 -doped laser crystals emitting more than 700 mW at 523 nm [4].…”
mentioning
confidence: 99%
“…Switching to direct green light emitting diode lasers is still challenging. Indium gallium nitride (InGaN) based laser diodes emitting up to 170 mW (CW) were demonstrated but their performance is limited by the laser crystal qualities [84][85][86][87]. As an alternative, 1060 nm DBR-tapered diode lasers were presented [23].…”
Section: Biomedical Applications In the Visible Spectral Rangementioning
confidence: 99%