High-Efficiency c-Si Solar Cells Passivated With ALD and PECVD Aluminum Oxide

Saint‐Cast, Pierre; Benick, Jan; Kania, D.; Weiss, Lucas; Hofmann, M.; Rentsch, J.; Preu, R.; Glunz, Stefan W.

doi:10.1109/led.2010.2049190

Cited by 140 publications

(79 citation statements)

References 16 publications

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“…As a result, we can obtain fixed charges on the AlO x /c-Si interface in 10 12 cm −2 . The CV curve shows right shifting, it reveals that the negative charges exist in AlO x , and induce an accumulation layer at the p-type silicon interface, resulting in a very effective field-effect passivation [21,22]. As shown in Figure 4, we compared two structures of the homojunction solar cells with and without AlO x passivation samples, both without ITO ARC-layers.…”

Section: Alo X Measurement and Analysismentioning

confidence: 99%

Silicon Heterojunction Solar Cells Using AlOx and Plasma-Immersion Ion Implantation

Lin

You

et al. 2014

Energies

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Aluminum oxide (AlO x ) and plasma immersion ion implantation (PIII) were studied in relation to passivated silicon heterojunction solar cells. When aluminum oxide (AlO x ) was deposited on the surface of a wafer; the electric field near the surface of wafer was enhanced; and the mobility of the carrier was improved; thus reducing carrier traps associated with dangling bonds. Using PIII enabled implanting nitrogen into the device to reduce dangling bonds and achieve the desired passivation effect. Depositing AlO x on the surface of a solar cell increased the short-circuit current density (J sc ); open-circuit voltage (V oc ); and conversion efficiency from 27.84 mA/cm 2 ; 0.52 V; and 8.97% to 29.34 mA/cm 2 ; 0.54 V; and 9.68%; respectively. After controlling the depth and concentration of nitrogen by modulating the PIII energy; the ideal PIII condition was determined to be 2 keV and 10 min. As a result; a 15.42% conversion efficiency was thus achieved; and the J sc ; V oc ; and fill factor were 37.78 mA/cm 2 ; 0.55 V; and 0.742; respectively.

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Section: Alo X Measurement and Analysismentioning

confidence: 99%

Silicon Heterojunction Solar Cells Using AlOx and Plasma-Immersion Ion Implantation

Lin

You

et al. 2014

Energies

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“…After annealing Al 2 O 3 films at moderate temperatures, an outstanding S eff of <5 cm/s was obtained [49,53] on a low-resistive p-type wafer, and < 1 cm/s was obtained on an n-type c-Si wafer (1 Ω-cm to 4 Ω-cm). After the annealing process, the SiO 2 /Al 2 O 3 stack yields a high level of chemical passivation due to a low interface defect density [56]. Using the SiO 2 /Al 2 O 3 stack, an excellent efficiency of 21.5% has been obtained; furthermore, the Al 2 O 3 film overcomes the so-called "parasitic shunting" effects that are very common for SiN x -passivated rear passivation [45].…”

Section: Al 2 Omentioning

confidence: 99%

Surface Passivation Schemes for High-Efficiency c-Si Solar Cells - A Review

Balaji¹,

Hussain²,

Park³

et al. 2015

Transactions on Electrical and Electronic Materials

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To reduce the cost of solar electricity, the crystalline-silicon (c-Si) photovoltaic industry is moving toward the use of thinner wafers (100 μm to 200 μm) to achieve a high efficiency. In this field, it is imperative to achieve an effective passivation method to reduce the electronic losses at the c-Si interface. In this article, we review the most promising surface passivation schemes that are available for high-efficiency solar cells.

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“…In the field of c-Si solar cells, the reduction of recombination losses at the surface of c-Si has become increasingly important in order to improve its power conversion efficiency [1][2][3]. In order to mitigate recombination losses at the surface of c-Si, many kinds of materials had been used [1][2][3][4].…”

Section: Introductionmentioning

confidence: 99%

“…In order to mitigate recombination losses at the surface of c-Si, many kinds of materials had been used [1][2][3][4]. In high-efficiency laboratory cells, traditionally, thermal SiO 2 grown in a high-temperature (≥ 900 o C) oxidation process have been applied as passivation layer with excellent chemical passivation property.…”

Section: Introductionmentioning

confidence: 99%

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A Novel Atomic Layer Deposited Al₂O₃Film with Diluted NH₄OH for High-Efficient c-Si Solar Cell

Oh¹,

Shin²,

Jeong³

et al. 2014

JSTS:Journal of Semiconductor Technology and Science

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Abstract-In this paper, Al 2 O 3 film deposited by thermal atomic layer deposition (ALD) with diluted NH 4 OH instead of H 2 O was suggested for passivation layer and anti-reflection (AR) coating of the p-type crystalline Si (c-Si) solar cell application. It was confirmed that the deposition rate and refractive index of Al 2 O 3 film was proportional to the NH 4 OH concentration. Al 2 O 3 film deposited with 5 % NH 4 OH has the greatest negative fixed oxide charge density (Q f ), which can be explained by aluminum vacancies (V Al ) or oxygen interstitials (O i ) under O-rich condition. Al 2 O 3 film deposited with NH 4 OH 5 % condition also shows lower interface trap density (D it ) distribution than those of other conditions. At NH 4 OH 5 % condition, moreover, Al 2 O 3 film shows the highest excess carrier lifetime (τ PCD ) and the lowest surface recombination velocity (S eff ), which are linked with its passivation properties. The proposed Al 2 O 3 film deposited with diluted NH 4 OH is very promising for passivation layer and AR coating of the p-type c-Si solar cell.

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High-Efficiency c-Si Solar Cells Passivated With ALD and PECVD Aluminum Oxide

Cited by 140 publications

References 16 publications

Silicon Heterojunction Solar Cells Using AlOx and Plasma-Immersion Ion Implantation

Silicon Heterojunction Solar Cells Using AlOx and Plasma-Immersion Ion Implantation

Surface Passivation Schemes for High-Efficiency c-Si Solar Cells - A Review

A Novel Atomic Layer Deposited Al₂O₃Film with Diluted NH₄OH for High-Efficient c-Si Solar Cell

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High-Efficiency c-Si Solar Cells Passivated With ALD and PECVD Aluminum Oxide

Cited by 140 publications

References 16 publications

Silicon Heterojunction Solar Cells Using AlOx and Plasma-Immersion Ion Implantation

Silicon Heterojunction Solar Cells Using AlOx and Plasma-Immersion Ion Implantation

Surface Passivation Schemes for High-Efficiency c-Si Solar Cells - A Review

A Novel Atomic Layer Deposited Al2O3Film with Diluted NH4OH for High-Efficient c-Si Solar Cell

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A Novel Atomic Layer Deposited Al₂O₃Film with Diluted NH₄OH for High-Efficient c-Si Solar Cell