High-Efficiency Class-F Amplifier Design In the Presence of Internal Parasitic Components of Transistors

Park, Hyun-chul; Ahn, Gunhyun; Jung, Sunghoon; Park, Cheon-Seok; Nah, Wansoo; Kim, Byung‐Sung; Yang, Youngoo

doi:10.1109/eumc.2006.281249

Cited by 14 publications

(5 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Debido a que los componentes parásitos internos del dispositivo activo causados por el empaquetado cambian significativamente las formas de onda de corriente y voltaje de drenaje internas (Park et al, 2006), se obtiene el acceso a la carga intrínseca utilizando el modelo de extracción de parásitas de dos elementos, desarrollado en Rubio et al (2014), el cual se basa en el circuito equivalente del dispositivo.…”

Section: Diseño De Los Amplificadoresunclassified

Amplificadores de potencia para aplicaciones de microondas basados en dispositivos GaN (GaN-based Power amplifiers for microwave applications)

Rubio¹,

Malver²,

Burgos³

et al. 2016

I2+D

View full text Add to dashboard Cite

Este artículo presenta una discusión sobre las estrategias de diseño de diferentes tipos de amplificadores de potencia para aplicaciones RF/Microondas, tales como el amplificador de carga sintonizada, Clase F, F inverso y Doherty. Además, se muestra la caracterización en onda continua de los amplificadores arriba mencionados, y una comparación de los resultados obtenidos, en términos de ganancia, eficiencia y potencia de salida.

show abstract

Section: Diseño De Los Amplificadoresunclassified

Amplificadores de potencia para aplicaciones de microondas basados en dispositivos GaN (GaN-based Power amplifiers for microwave applications)

Rubio¹,

Malver²,

Burgos³

et al. 2016

I2+D

View full text Add to dashboard Cite

show abstract

“…Especially, important is the role played by parasitics, emphasized by the package contributions, which seriously impact on the design of Class B and even more Class F PAs. In fact, only an accurate knowledge of parasitics permits to precisely shift the reference planes from the externally accessible terminals to the intrinsic ones [13], and for this purpose, they have been carefully identified through cold FET measurements [14].…”

Section: Design Strategymentioning

confidence: 99%

Development of single‐stage and doherty GaN‐based hybrid RF power amplifiers for quasi‐constant envelope and high peak to average power ratio wireless standards

Moreno

Fang

Quaglia

et al. 2011

Micro & Optical Tech Letters

View full text Add to dashboard Cite

To have a broadband 180 phase differentiation, we added two sections of a RHTL and a LHTL to the lumped-element Wilkinson power divider as shown in Figure 2. The result is shown in Figure 6. For the same frequency range mentioned above, the insertion loss varies from À0.51 to À1.78 dB, whereas the minimum return loss at all ports and the isolation are below À10.2 dB. The output phase difference for the frequency range is just 69.5 only as shown in Figure 6(b), which agrees very well with the theory (Fig. 4). CONCLUSIONSIn this article, we present a compact and broadband balun made with lumped elements only. Unlike the previous works, we achieved both a small size and a broadband phase differentiation. Also, only this work is compatible with the modern integrated circuit design. The detailed theory suggested, and the measured results agree very well. The insertion loss and return loss can be better, if an optimized design is incorporated in the MMIC design. Also, the size can be further minimized in such a design. Applications exist in many microwave systems where a broadband and balanced signal generation is required.

show abstract

“…In particular, the inverse class-F operation has attracted much attention due to its excellent performance. The inverse class-F amplifier has the open load termination at evenorder harmonic components (voltage peaking) and short load termination at odd-order harmonic components (current peaking) [1][2][3].…”

Section: Introductionmentioning

confidence: 99%

“…In other words, new telecom systems require high-transmission bandwidths and longhaul with reliable mobility. The Radio over Fiber (RoF) technology [2] represents a key solution for satisfying these requirements, since it jointly takes advantage of the huge bandwidth offered by optical communications systems [3] with the mobility and flexibility provided by wireless systems. RoF systems consist of heterogeneous networks formed by wireless and optical links.…”

Section: Introductionmentioning

confidence: 99%

High‐efficiency power amplifier using in/output matching networks based on novel harmonic control circuit

Choi

Seo

2009

Micro & Optical Tech Letters

View full text Add to dashboard Cite

High-Efficiency Class-F Amplifier Design In the Presence of Internal Parasitic Components of Transistors

Cited by 14 publications

References 4 publications

Amplificadores de potencia para aplicaciones de microondas basados en dispositivos GaN (GaN-based Power amplifiers for microwave applications)

Amplificadores de potencia para aplicaciones de microondas basados en dispositivos GaN (GaN-based Power amplifiers for microwave applications)

Development of single‐stage and doherty GaN‐based hybrid RF power amplifiers for quasi‐constant envelope and high peak to average power ratio wireless standards

High‐efficiency power amplifier using in/output matching networks based on novel harmonic control circuit

Contact Info

Product

Resources

About