High-Efficiency Class-F GaN HEMT Amplifier With Simple Parasitic-Compensation Circuit

Lee, Yong‐Sub; Lee, Mun‐Woo; Jeong, Yoon‐Ha

doi:10.1109/lmwc.2007.912023

Cited by 56 publications

(21 citation statements)

References 9 publications

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“…Ro DB Biasing Line with Harmonic Tuning The composite right/left-handed transmission-line (CRLH TL) has been adopted in the literature as harmonic tuner [9], and biasing-line has also been used to perform the functions of harmonic tuning [10]. A DB-HCN using a CRLH-TL and a dual-band biasing line combining harmonic tuning are adopted in the proposed dual-band class-F P A as shown in Fig.…”

Section: Dbmmentioning

confidence: 99%

A highly efficient concurrent dual-band class-F power amplifier for applications at 1.7 and 2.14 GHz

Zhu

Cheng

et al. 2015

2015 IEEE MTT-S International Microwave Symposium

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A high efficiency concurrent dual-band c1ass-F power amplifier (PA) is presented. The combination of the composite right/left-handed transmission line (CRLH-TL) andthe dual-band biasing line with harmonic tuning is adopted to allow the design of compact dual-band c1ass-F harmonic control networks. The measured maximum output power and peak power added efficiency (PAE) are 40.5 dBm and 78% at 1.7 GHz and 39.8 dBm and 77.1 % at 2.14 GHz, respectively.

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Section: Dbmmentioning

confidence: 99%

A highly efficient concurrent dual-band class-F power amplifier for applications at 1.7 and 2.14 GHz

Zhu

Cheng

et al. 2015

2015 IEEE MTT-S International Microwave Symposium

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“…Another technique is to compensate this parasitics before load termination. Therefore compensating elements like a series capacitor and a shunt inductor are inserted between the packaged device and the load network [8]. Then the load network is purely real.…”

Section: Impedance Transformer Realizationmentioning

confidence: 99%

Power Amplifier Efficiency Enhancement Using Adaptive Load Transformation

Lehmann¹,

Knoechel²

2009

2009 German Microwave Conference

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An adaptive load transformation technique utilizing switched coupled lines as impedance transformers is proposed to improve the back-off efficiency of power amplifiers. This transformer technique is capable of presenting nearly any desired real impedance value at the input while simultaneously handling high powers. The load impedance can be switched between a defined minimum and maximum value by switched coupled lines. Therefore application in high power amplifiers is possible. The transformer is explained in detail and measurement results for impedance transformation and insertion loss are presented. Finally measurement results for application in a PA are also given.

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“…The C com is used to compensate for the R d and L d . Here, the L com is used to compensate for the C d [8], [9].…”

Section: A High-efficiency Gan Hemt Class-f Power Amplifiermentioning

confidence: 99%

High-efficiency doherty amplifier using GaN HEMT class-F cells for WCDMA applications

Lee

Mun-Woo

Jeong

2008

2008 International Conference on Microwave and Millimeter Wave Technology

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This paper presents a high-efficiency GaN high electron mobility transistor (HEMT) class-F Doherty amplifier (CFDA) for wide-band code division multiple access (WCDMA) applications. The class-F power amplifiers (PAs) with significant harmonic suppression are used as the carrier and peaking cells. For validations, the class-F PA is designed and implemented with 25-W GaN HEMT at 2.14 GHz. From the measured results for a single tone, the implemented class-F PA shows the peak poweradded efficiency (PAE) and drain efficiency of 72.2% and 75.8% with a gain of 13.2 dB at an output power of 43.2 dBm by suppressing harmonic power levels below -55 dBc. For the proposed CFDA, the PAE and drain efficiency of 56.3% and 60.1% is achieved at 39.5 dBm (6-dB back-off power from Psat) for a single tone. For a one-carrier WCDMA signal, the CFDA shows the PAE of 44.9% with an adjacent channel leakage ratio (ACLR) of -22.1 dBc (±2.5 MHz offset) at 36.5 dBm, while an ACLR of -35.4 dBc with the PAE of 39.7% is achieved for the CEDA after linearity optimization.

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High-Efficiency Class-F GaN HEMT Amplifier With Simple Parasitic-Compensation Circuit

Cited by 56 publications

References 9 publications

A highly efficient concurrent dual-band class-F power amplifier for applications at 1.7 and 2.14 GHz

A highly efficient concurrent dual-band class-F power amplifier for applications at 1.7 and 2.14 GHz

Power Amplifier Efficiency Enhancement Using Adaptive Load Transformation

High-efficiency doherty amplifier using GaN HEMT class-F cells for WCDMA applications

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