High efficiency DCM buck converter with dynamic logic based adaptive switch-time control

Manohar, Sujan K.; Balsara, Poras T.

doi:10.1007/s10470-015-0589-9

Cited by 2 publications

(2 citation statements)

References 21 publications

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“…For these applications, Naidu and Kittur [20] and Ghiasi et al [21] present different topologies with switched capacitors, but they only perform downconversion. The work of Manohar and Balsara [22] follows the same buck conversion approach and presents a partially integrated buck DC-DC converter. A different approach is presented by Souvignet et al [23] using a more versatile and fully integrated switched-capacitor converter for down and up conversions.…”

Section: Related Workmentioning

confidence: 99%

A Regulated 400-mV CMOS DC-DC Converter with On-the-Fly Equivalent Output Resistance Tuning

et al. 2023

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Energy harvesting is a technology that can be applied to IoT systems to eliminate the need for batteries. Many types of energy sources are available for energy harvesting, such as light, thermal, vibration, and electromagnetic energy. Indoors, where most IoT devices are located, artificial light, such as from LED lamps, can be used for energy harvesting in circuits with very ultra-low power consumption. Integrated switch-capacitor DC-DC converters are required for this type of system to convert the harvested energy into a constant output voltage suitable for powering an electronic circuit. The idea of this work is to use a hysteretic feedback control consisting of comparators and a logic system to adjust the switching frequency and the voltage conversion ratio (VCR) of the converter. With this, the equivalent output resistance is tuned to a value that results in a constant output voltage. A new method for modeling the equivalent output resistance based on charge flow analysis is proposed, which also considers the effects of source resistance. An integrated energy-harvesting system consisting of a switched-capacitor DC-DC converter is implemented to obtain an output voltage of 400 mV using a small photovoltaic cell for energy harvesting from indoor light. The proposed system can power an ultra-low-power device between 20 μW and 40 μW with a minimum input voltage of 230 mV. Electrical simulation results show that the implemented converter can achieve a peak efficiency of 81.24% at an input voltage of 260 mV for a 20 μW load.

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Section: Related Workmentioning

confidence: 99%

A Regulated 400-mV CMOS DC-DC Converter with On-the-Fly Equivalent Output Resistance Tuning

et al. 2023

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“…Most of the CMOS‐based reverse conduction sensing circuits designed for silicon power transistors are unable to withstand the large negative voltage [12, 17]. The methods of using CMOS‐based dead‐time detectors are limited to low‐voltage signals with limited accuracy [18].…”

Section: Introductionmentioning

confidence: 99%

Gate driver IC for enhancement mode GaN power transistors with senseFET reverse conduction detection circuit

Zhang

Leng

et al. 2019

IET Power Electronics

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Dead-times are necessary in switching output stage to avoid shoot-through current between the high side (HS) and the low side (LS) power transistors. However, excessively long dead-times can lead to unwanted reverse conduction and power loss. Sensing the duration of reverse conductions are especially difficult for high-voltage enhancement mode (e-mode) gallium nitride (GaN) HEMTs due to their fast switching speed. High-precision sensing circuits are required for dead-time correction as the load current changes and to withstand large voltage swings. Traditional CMOS-based sensing circuits (e.g. standard logic gates) are not suitable for GaN-based converters as they can only handle limited voltage ranges. In addition, severe undershoots (up to −4 V) may damage the sensing circuit. Here, a gate driver IC for e-mode GaN power output stages capable of detecting the presence of reverse conduction with a best resolution of 0.66 ns, a dead-time adjustment resolution of 0.33 ns, and with on-chip closed-loop control is presented. In addition, a novel reverse conduction sensing circuit that can accommodate the large voltage swings at the switching node (SW) is also described. (a) Insufficient dead-time causes shoot-through, (b) Excessive dead-time leads to undershoot [14]

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High efficiency DCM buck converter with dynamic logic based adaptive switch-time control

Cited by 2 publications

References 21 publications

A Regulated 400-mV CMOS DC-DC Converter with On-the-Fly Equivalent Output Resistance Tuning

A Regulated 400-mV CMOS DC-DC Converter with On-the-Fly Equivalent Output Resistance Tuning

Gate driver IC for enhancement mode GaN power transistors with senseFET reverse conduction detection circuit

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