High‐efficiency GaInP/GaAs/GaInNAs solar cells grown by combined MBE‐MOCVD technique

Tukiainen, Antti; Aho, Arto; Gori, G.; Polojärvi, Ville; Casale, Mariacristina; Greco, Erminio; Isoaho, Riku; Aho, Timo; Raappana, Marianna; Campesato, R.; Guina, Mircea

doi:10.1002/pip.2784

Cited by 33 publications

(29 citation statements)

References 39 publications

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“…In fact, the energy gap of InGaNAs slightly increases as demonstrated by Photoluminescence and Spectral Response measurement reported in figure 3. As reported in [5] during the MOCVD process the emission peak corresponding to the dilute nitride junction is slightly shifted towards shorter wavelengths and this explains at least in part the reduced J sc . Such behavior is rather typical for dilute nitride heterostructures experiencing thermal annealing [9][10][11][12][13].…”

Section: Figure 2 J Sc Of the Inganas Junction As A Function Of The mentioning

confidence: 52%

“…The Jsc decrease after MOCVD growth is linked to the light absorption of the over layers and to the properties of dilute nitride junction that are altered by the annealing suffered during re-growth process as discussed in [5]. In fact, the energy gap of InGaNAs slightly increases as demonstrated by Photoluminescence and Spectral Response measurement reported in figure 3.…”

Section: Figure 2 J Sc Of the Inganas Junction As A Function Of The mentioning

confidence: 69%

“…In this paper, we report results obtained from III-V solar high-efficiency multi-junction solar cells grown by the MOCVD and MBE techniques. The technique presented in [5] combines two active solar cell junctions grown by different methods into single monolithic multi-junction structure. This opens a new perspective for fabrication of space tandem solar cells with three or more junctions.…”

Section: Introductionmentioning

confidence: 99%

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31% European InGaP/GaAs/InGaAs Solar Cells for Space Application

et al. 2017

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We report a triple junction InGaP/GaAs/InGaNAs solar cell with efficiency of ~31% at AM0, 25 °C fabricated using a combined molecular beam epitaxy (MBE) and metal-organic chemical vapour deposition (MOCVD) processes. The prototype cells comprise of InGaNAs (Indium Gallium Nitride Arsenide) bottom junction grown on a GaAs (Gallium Arsenide) substrate by MBE and middle and top junctions deposited by MOCVD. Repeatable cell characteristics and uniform efficiency pattern over 4-inch wafers were obtained. Combining the advantages offered by MBE and MOCVD opens a new perspective for fabrication of high-efficiency space tandem solar cells with three or more junctions. Results of radiation resistance of the sub-cells are also presented and critically evaluated to achieve high efficiency in EOL conditions.

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Section: Figure 2 J Sc Of the Inganas Junction As A Function Of The mentioning

confidence: 52%

Section: Figure 2 J Sc Of the Inganas Junction As A Function Of The mentioning

confidence: 69%

Section: Introductionmentioning

confidence: 99%

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31% European InGaP/GaAs/InGaAs Solar Cells for Space Application

et al. 2017

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“…Three-junction lattice matched solar cells grown by molecular beam epitaxy (MBE) and incorporating a ∼1e Vdilute nitride subcell have shown excellent power conversion efficiency, including a result of 44.0% under 942 suns concentration 1,2 and 29% at 1 sun. 3 "Nonlattice matched" approaches using wafer bonding, metamorphic composition-graded buffers, and/or epitaxial liftoff have shown the greatest efficiency overall with successful four-junction devices reaching up to 46.0% under concentration using a wafer bonded architecture, 4,5 and 45.7% using an inverted metamorphic architecture. 6 In *Address all correspondence to: Karin Hinzer, E-mail: khinzer@uottawa.ca 1947-7988/2017/$25.00 © 2017 SPIE contrast, a "lattice-matched" four-junction cell could yield near-record efficiency while avoiding the added costs associated with those techniques.…”

Section: Introductionmentioning

confidence: 99%

Design of thin InGaAsN(Sb) n - i - p junctions for use in four-junction concentrating photovoltaic devices

et al. 2017

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READ THESE TERMS AND CONDITIONS CAREFULLY BEFORE USING THIS WEBSITE.http://nparc.nrc-cnrc.gc.ca/eng/copyright Vous avez des questions? Nous pouvons vous aider. Pour communiquer directement avec un auteur, consultez la première page de la revue dans laquelle son article a été publié afin de trouver ses coordonnées. Si vous n'arrivez pas à les repérer, communiquez avec nous à PublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. Questions?Contact the NRC Publications Archive team at PublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. If you wish to email the authors directly, please see the first page of the publication for their contact information. NRC Publications Archive Archives des publications du CNRCThis publication could be one of several versions: author's original, accepted manuscript or the publisher's version. / La version de cette publication peut être l'une des suivantes : la version prépublication de l'auteur, la version acceptée du manuscrit ou la version de l'éditeur. NRC Publications Record / Notice d'Archives des publications de CNRC:http://nparc.nrc-cnrc.gc.ca/eng/view/object/?id=e7c07e6d-fdaa-432b-9de5-1d417eac1341 http://nparc.nrc-cnrc.gc.ca/fra/voir/objet/?id=e7c07e6d-fdaa-432b-9de5-1d417eac1341Design of thin InGaAsN(Sb) n-i-p junctions for use in four-junction concentrating photovoltaic devices Abstract. Four-junction solar cells for space and terrestrial applications require a junction with a band gap of ∼1e Vfor optimal performance. InGaAsN or InGaAsN(Sb) dilute nitride junctions have been demonstrated for this purpose, but in achieving the 14 mA∕cm 2 short-circuit current needed to match typical GaInP and GaAs junctions, the open-circuit voltage (V OC ) and fill factor of these junctions are compromised. In multijunction devices incorporating materials with short diffusion lengths, we study the use of thin junctions to minimize sensitivity to varying material quality and ensure adequate transmission into lower junctions. An n-i-p device with 0.65-μm absorber thickness has sufficient short-circuit current, however, it relies less heavily on fieldaided collection than a device with a 1-μm absorber. Our standard cell fabrication process, which includes a rapid thermal anneal of the contacts, yields a significant improvement in diffusion length and device performance. By optimizing a four-junction cell around a smaller 1-sun short-circuit current of 12.5 mA∕cm 2 , we produced an InGaAsN(Sb) junction with open-circuit voltage of 0.44 V at 1000 suns (1 sun ¼ 100 mW∕cm 2 ), diode ideality factor of 1.4, and sufficient light transmission to allow >12.5 mA∕cm 2 in all four subcells.

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“…4,5 More recently, a combination of MBE and metalorganic chemical vapor deposition (MOCVD) epitaxy was developed as a practical approach to fabricate GaInNAs-based solar cells, exploiting the key features that are established in the production of commercial solar cells. 6 The main advantages offered by GaInNAs rest upon their ability to tailor the bandgap in a wide range from approximately 0.8 eV to 1.42 eV while remaining lattice-matched to GaAs and Ge. 4,7 Despite the recent achievement and good potential for future developments, at high N compositions (y !…”

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Enhancement of photocurrent in GaInNAs solar cells using Ag/Cu double-layer back reflector

Aho

Tukiainen

et al. 2016

Applied Physics Letters

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The effect of a Ag/Cu-based double-layer back reflector on current generation in GaInNAs single-junction solar cell is reported. Compared to Ti/Au reflector, the use of Ag/Cu led to a 28% enhancement of short-circuit current density, attaining a value of ∼14 mA/cm2 at AM1.5D (1000 W/m2) under a GaAs filter. The enhanced current generation is in line with requirements for current-matching in GaInP/GaAs/GaInNAs triple-junction solar cells. The Ag/Cu reflectors also had a low contact resistivity of the order of 10−6 Ω·cm2 and none of the samples exhibited notable peeling of metals in the adhesion tests. Moreover, no discernible diffusion of the metals into the semiconductor was observed after thermal annealing at 200 °C.

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High‐efficiency GaInP/GaAs/GaInNAs solar cells grown by combined MBE‐MOCVD technique

Cited by 33 publications

References 39 publications

31% European InGaP/GaAs/InGaAs Solar Cells for Space Application

31% European InGaP/GaAs/InGaAs Solar Cells for Space Application

Design of thin InGaAsN(Sb) n - i - p junctions for use in four-junction concentrating photovoltaic devices

Enhancement of photocurrent in GaInNAs solar cells using Ag/Cu double-layer back reflector

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