1D and 2D NMR spectra of both the reduced and oxidized forms of cytochrome c' from Rhodocyclus gelatinosus have been recorded. The analysis of the pH dependence of the 1H NMR spectrum of the ferric form has been performed, and two main ionizing groups have been identified. By comparison of the pH dependence of the available spectra of cytochromes c', an ambiguity remaining from previous studies on related cytochromes c' has been solved. By means of 2D spectra, an assignment of all the paramagnetically shifted signals is proposed both for the ferrous and for the ferric forms.

Triple-junction GaInP/GaAs/GaInNAs solar cells with conversion efficiency of~29% at AM0 are demonstrated using a combination of molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) processes. The bottom junction made of GaInNAs was first grown on a GaAs substrate by MBE and then transferred to an MOCVD system for subsequent overgrowth of the two top junctions. The process produced repeatable cell characteristics and uniform efficiency pattern over 4-inch wafers. Combining the advantages offered by MBE and MOCVD opens a new perspective for fabrication of high-efficiency tandem solar cells with three or more junctions.

We report a detailed performance assessment of triple junction dilute nitride solar cells fabricated by a combined molecular beam epitaxy–metal organic chemical vapor deposition process and designed for space applications. The experimental sample exhibits an efficiency level of 30.8% under AM0 illumination. Analyses of the isotype single junction dilute nitride bottom cells reveal a band gap voltage offset of 0.49 V at one sun illumination and a value as low as 0.47 V for full spectrum excitation without filter layers. The analyses point out the limitation of the design in terms of current balancing. With optimized design, an efficiency of 32.1% is possible, revealing the maturity reached by dilute nitride technology in the quest for improving the efficiency of lattice‐matched multijunction solar cells.

We report a triple junction InGaP/GaAs/InGaNAs solar cell with efficiency of ~31% at AM0, 25 °C fabricated using a combined molecular beam epitaxy (MBE) and metal-organic chemical vapour deposition (MOCVD) processes. The prototype cells comprise of InGaNAs (Indium Gallium Nitride Arsenide) bottom junction grown on a GaAs (Gallium Arsenide) substrate by MBE and middle and top junctions deposited by MOCVD. Repeatable cell characteristics and uniform efficiency pattern over 4-inch wafers were obtained. Combining the advantages offered by MBE and MOCVD opens a new perspective for fabrication of high-efficiency space tandem solar cells with three or more junctions. Results of radiation resistance of the sub-cells are also presented and critically evaluated to achieve high efficiency in EOL conditions.

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