High efficiency GaN switching converter IC with bootstrap driver for envelope tracking applications

Hong, Young-Pyo; Mukai, Kazuo; Gheidi, Hamed; Shinjo, Shintaro; Asbeck, P.M.

doi:10.1109/rfic.2013.6569602

Cited by 39 publications

(14 citation statements)

References 6 publications

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“…For example, an envelope tracking bandwidth of 20 MHz with power device switching frequencies up to 200 MHz has been demonstrated due to the ongoing work on the integration of GaN high-electron-mobility-transistor (HEMT)-based gate drivers, and buck converters on insulating SiC substrates [1]. The potential use of this circuit for 5G applications using GaN on LR Si substrates, where both power and RF GaN devices featured on the same chip, will introduce the additional advantage of low cost and large diameter wafers, compared with high-resistivity Si and SiC technologies.…”

Section: Introductionmentioning

confidence: 99%

High-Performance MMIC Inductors for GaN-on-Low-Resistivity Silicon for Microwave Applications

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Wallis

et al. 2018

IEEE Microw. Wireless Compon. Lett.

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Abstract-Novel MMIC spiral inductors on GaN-on-lowresistivity silicon (LR-Si) substrates (σ < 40 · cm) are demonstrated with enhanced self-resonance frequency ( f SRF ) and Q-factor. The developed technology improves inductor performance by suppressing substrate coupling effects using air-bridge technology above benzocyclobutene dielectric as an interface layer on the lossy substrate. A 0.83-nH spiral inductor with peak Q-factor enhancement of 57% ( Q = 22 at 24 GHz) and maximum f SRF of 59 GHz was achieved because of the extra 5-μm elevation in air. An accurate broad-band model for the fabricated inductors has been developed and verified for further performance analysis up to 40 GHz. The proposed inductors utilize cost-effective, reliable, and MMIC-compatible technology for the realization of high-performance RF GaN-on-LR Si MMIC circuits for millimeter-wave applications.Index Terms-Benzocyclobutene (BCB), GaN-based highelectron-mobility transistors (HEMTs), high-Q Inductors, low-resistivity silicon substrates, millimeter wave.

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Section: Introductionmentioning

confidence: 99%

High-Performance MMIC Inductors for GaN-on-Low-Resistivity Silicon for Microwave Applications

Eblabla

Wallis

et al. 2018

IEEE Microw. Wireless Compon. Lett.

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“…Recent work on the integration of GaN HEMT based gate driver and buck converters on insulating SiC substrates has achieved envelope tracking bandwidths of 20 MHz [1] with power device switching frequencies up to 200 MHz. The potential use of this circuit for 5G applications using GaN on Si substrates were both Power and RF GaN on the same chip will offer the additional benefit of lower cost.…”

Section: Introductionmentioning

confidence: 99%

High Performance GaN High Electron Mobility Transistors on Low Resistivity Silicon for <inline-formula> <tex-math notation="LaTeX">$X$ </tex-math></inline-formula>-Band Applications

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Thayne

et al. 2015

IEEE Electron Device Lett.

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“…As a result of this difficulty, the power-added efficiency (PAE) of GaN VMCDs has typically not been high. In our work, the driver stage for the output pull-up FET is carried out with a bootstrap configuration, which increases its efficiency [5].…”

Section: Introductionmentioning

confidence: 99%

Over 65% PAE GaN voltage-mode class d power amplifier for 465 MHz operation using bootstrap drive

Nakamizo

Mukai

Shinjo

et al. 2015

2015 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR)

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We report a digitally-driven switching-mode amplifier using GaN devices in Voltage-Mode Class D operation, for use at 465 MHz (the recently designated frequency for LTE Band 31). The amplifier is fabricated as an integrated circuit including output devices and drivers. The output circuit employs two stacked GaN FETs; a bootstrap-drive configuration is used in order to increase the driver-stage efficiency for the uppermost GaN FET. The GaN VMCD amplifier achieves peak power-added efficiency of 66.6%, and an output power of 3.3W. At 6dB power backoff, power-added efficiency of 36.3% is achieved. These power-added efficiency values are the highest for reported GaN VMCD amplifiers at a commercial wireless frequency.

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High efficiency GaN switching converter IC with bootstrap driver for envelope tracking applications

Cited by 39 publications

References 6 publications

High-Performance MMIC Inductors for GaN-on-Low-Resistivity Silicon for Microwave Applications

High-Performance MMIC Inductors for GaN-on-Low-Resistivity Silicon for Microwave Applications

High Performance GaN High Electron Mobility Transistors on Low Resistivity Silicon for <inline-formula> <tex-math notation="LaTeX">$X$ </tex-math></inline-formula>-Band Applications

Over 65% PAE GaN voltage-mode class d power amplifier for 465 MHz operation using bootstrap drive

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