High-Performance MMIC Inductors for GaN-on-Low-Resistivity Silicon for Microwave Applications

Abstract

Abstract-Novel MMIC spiral inductors on GaN-on-lowresistivity silicon (LR-Si) substrates (σ < 40 · cm) are demonstrated with enhanced self-resonance frequency ( f SRF ) and Q-factor. The developed technology improves inductor performance by suppressing substrate coupling effects using air-bridge technology above benzocyclobutene dielectric as an interface layer on the lossy substrate. A 0.83-nH spiral inductor with peak Q-factor enhancement of 57% ( Q = 22 at 24 GHz) and maximum f SRF of 59 GHz was achieved because of the extra 5-μm elevation in air. An accurate broad-band model for the fabricated inductors has been developed and verified for further performance analysis up to 40 GHz. The proposed inductors utilize cost-effective, reliable, and MMIC-compatible technology for the realization of high-performance RF GaN-on-LR Si MMIC circuits for millimeter-wave applications.Index Terms-Benzocyclobutene (BCB), GaN-based highelectron-mobility transistors (HEMTs), high-Q Inductors, low-resistivity silicon substrates, millimeter wave.

S- to X-Band Stretchable Inductors and Filters for Gigahertz Soft and Epidermal Electronics

“…Together, the two spirals contribute about 70% (4.4 nH) of the total L value and the serpentine line contributes 1.6 nH. Figure g compares the Q -factors and f res of the stretchable inductor with other reports, showing the competency of the present work in comparison to the GHz stretchable inductor based on stretchable coils, to the previously demonstrated flexible inductor on PET , and conventional spiral inductors fabricated on rigid (Si: Q = 12; GaAs: Q = 22; GaN: Q = 10) substrates. With the high Q -factor and high f res , the stretchable inductor is expected to satisfy the need of wireless communication at various frequency bands, such as GSM (upper sideband of 1.9 GHz), Bluetooth (2.4 GHz), WLAN (2.4 GHz and 5.8 GHz), and emerging 5G applications (lower band of 3.5 GHz). , …”

“…(f) Q -factors versus frequency for the two-spiral stretchable inductors under 20% elongation. (g) Benchmarking of the working frequency as a function of Q -factor for typical stretchable, flexible, and rigid (Si, GaAs, and GaN) RF inductors.…”

“…Spiral inductors, with variations of ring shapes (circle, square, hexagon, octagon, or other polygons), have been widely used in RFICs for a few decades now . They are featured with compact size, high resonance frequencies, scalable inductance values, and high Q factors, capable of fulfilling various functions like RF chokes, bias network, impedance matching, etc., and have been adopted in RFICs fabricated on Si, GaAs, and GaN substrates. The values of inductance ( L ) are determined by the number of coils and the mutual inductance between the coils.…”

Low Power Circuit Design for Footed Quasi Resistance Scheme In 45NM VLSI Technology

“…In PDB model source of transistor Qs in outputinverter is connected to node Y instead of ground asshown in figure (1). For this particular model when input A islogic 1, evaluation and precharge will lead to followingcase.…”

“…Since for delay and optimized power, several logic families are designed [1]. The main aim of these logic circuits is to reduce delay, speed of operation and to decrease the power dissipation.…”