High efficiency high density telecom rectifier with GaN device

Sun, Lei; Ding, Zeyu; De-sheng, Guo; Yan, Lihao; Yan, Chao

doi:10.1109/intlec.2015.7572401

Cited by 12 publications

(3 citation statements)

References 3 publications

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“…To overcome this limitation, a multilayer PCB is mounted very closely above the 650 V, 30 A IMS GaN power module in ref. [10]. A different solution is presented in ref.…”

Section: Insulated Metal Substrate Conceptsmentioning

confidence: 99%

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Power Module Design for GaN Transistors Enabling High Switching Speed in Multi‐Kilowatt Applications

2023

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The advantages of gallium nitride and silicon carbide transistors over silicon devices are highlighted. The design criteria for power modules in multi‐kilowatt applications to effectively leverage these advantages are described. Various concepts to overcome limitations associated with state‐of‐the‐art power module packaging presented in the literature are summarized and evaluated. A novel power module design comprising a 650 V, 300 A half‐bridge with integrated direct current–link and gate drivers is proposed. The results of a finite‐element analysis of its parasitic elements and subsequent double‐pulse test simulation are presented.

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“…To overcome this limitation, a multilayer PCB is mounted very closely above the 650 V, 30 A IMS GaN power module in ref. [10]. A different solution is presented in ref.…”

Section: Insulated Metal Substrate Conceptsmentioning

confidence: 99%

“…The multilayer structure allows the gate and Kelvin source connections of the power devices to be routed on two adjacent layers resulting in low gate loop stray inductance, reported as 7.4 nH in ref. [10] and 2 nH in ref. [9].…”

Section: Insulated Metal Substrate Conceptsmentioning

confidence: 99%

Power Module Design for GaN Transistors Enabling High Switching Speed in Multi‐Kilowatt Applications

2023

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“…1 (b). However, in monolithic integration, parasitic inductance is minimized and switching is fast and noiseless; this leads to improved power efficiency [9,10,11,12]. Additionally, it reduces volume of power converters by decreasing the weight and volume of the passive components at high frequency switching [13].…”

Section: Introductionmentioning

confidence: 99%

Monolithic integration of gate driver and p-GaN power HEMT for MHz-switching implemented by e-mode GaN-on-SOI process

Yamashita

Stoffels

Posthuma

et al. 2019

IEICE Electron. Express

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Reducing parasitic coupling components can improve switching performance in electric circuits. A two-stage gate driver and power Gallium Nitride High Electron Mobility Transistors (GaN HEMT) were monolithically integrated for MHz-switching. The monolithic integration improves switching performance owing to minimized parasitic inductance. The proposed GaN-IC was fabricated using an enhancement-mode GaNon-Insulator process technology. Experimental results showed that the GaN-IC had faster transition and less energy loss than a conventional circuit using a discrete gate driver. The proposed GaN-IC reduced switching time by 86% at turn-off and by 45% at turn-on under off-state V DS of 100 V and on-state I D of 10 A.

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Evaluation and projection of 4G and 5G RAN energy footprints: the case of Belgium for 2020–2025

2022

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High efficiency high density telecom rectifier with GaN device

Cited by 12 publications

References 3 publications

Power Module Design for GaN Transistors Enabling High Switching Speed in Multi‐Kilowatt Applications

Power Module Design for GaN Transistors Enabling High Switching Speed in Multi‐Kilowatt Applications

Monolithic integration of gate driver and p-GaN power HEMT for MHz-switching implemented by e-mode GaN-on-SOI process

Evaluation and projection of 4G and 5G RAN energy footprints: the case of Belgium for 2020–2025

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